Semiconductor device including through-silicon via and method of forming the same

1. A semiconductor device comprising:

a substrate comprising a first surface and a second surface opposing the first surface;

a via insulating layer extending through the substrate;

a through-silicon via extending through the via insulating layer, a center of the through-silicon via misaligned from a center of the via insulating layer;

a blocking layer on the first surface;

a first insulating layer on the blocking layer; and

a contact plug contacting the through-silicon via and extending through the first insulating layer and the blocking layer.

2. The semiconductor device according to claim 1 , wherein,

the through-silicon via comprises a first side surface and a second side surface opposing the first side surface,

the via insulating layer comprises a first portion adjacent to the first side surface, and a second portion adjacent to the second side surface, and

a first horizontal width of the first portion is greater than a second horizontal width of the second portion.

3. The semiconductor device according to claim 1 , wherein a distance between a lowermost end of the contact plug and the second surface is less than or equal to a distance between the first surface and the second surface.

4. The semiconductor device according to claim 1 , wherein a distance between a lowermost end of the contact plug and the second surface is less than or equal to a distance between an uppermost end of the via insulating layer and the second surface.

5. The semiconductor device according to claim 1 , wherein the via insulating layer has a width relatively increasing as the via insulating layer extends toward the first surface, and the via insulating layer has a width relatively decreasing as the via insulating layer extends toward the second surface.

6. The semiconductor device according to claim 1 , wherein the through-silicon via has a width relatively decreasing as the through-silicon via extends toward the first surface, and the through-silicon via has a width relatively increasing as the through-silicon via extends toward the second surface.

7. The semiconductor device according to claim 1 , wherein a horizontal width of the through-silicon via is greater than a horizontal width of the contact plug.

8. The semiconductor device according to claim 1 , wherein the through-silicon via contacts a lower surface and a side surface of the contact plug.

9. The semiconductor device according to claim 1 , wherein the through-silicon via contacts the blocking layer.

10. The semiconductor device according to claim 1 , wherein an uppermost end of the through-silicon via is coplanar with the first surface.

11. The semiconductor device according to claim 1 , wherein the blocking layer extends on the via insulating layer.

12. The semiconductor device according to claim 1 , wherein,

the via insulating layer comprises silicon oxide, and

the blocking layer comprises silicon nitride.

13. The semiconductor device according to claim 1 , wherein:

the contact plug comprises tungsten (W), and

the through-silicon via comprises copper (Cu).

14. The semiconductor device according to claim 1 , further comprising:

a second insulating layer on the first insulating layer; and

a wiring in the second insulating layer and contacting the contact plug,

wherein the wiring comprises copper (Cu).

15. The semiconductor device according to claim 1 , further comprising:

a spacer having a uniform thickness between the through-silicon via and the via insulating layer.

16. A method of forming the semiconductor device of claim 1 , comprising:

forming the via insulating layer extending through the substrate, the forming the via insulating layer comprising performing a first thin film formation process at between 400° C. to 1,300° C.;

forming the contact plug; and

forming the through-silicon via after formation of the via insulating layer and the contact plug.

17. The method according to claim 16 , further comprising:

forming a transistor on the substrate after forming the via insulating layer and before forming the through-silicon via.

18. The method according to claim 16 , further comprising:

forming a spacer between the through-silicon via and the via insulating layer after forming the via insulating layer and the contact plug,

wherein the forming the spacer comprises performing a second thin film formation process at a lower temperature than the forming the via insulating layer.

19. The method according to claim 18 , wherein the forming the spacer comprises the second thin film formation process, which is performed at between 150° C. to 400° C.

20. A semiconductor device comprising:

a substrate comprising a first surface and a second surface opposing the first surface;

a via insulating layer extending through the substrate, the via insulating layer having a width relatively increasing as the via insulating layer extends toward the first surface and having a width relatively decreasing as the via insulating layer extends toward the second surface;

a through-silicon via extending through the via insulating layer, the through-silicon via having a width relatively decreasing as the through-silicon via extends toward the first surface and having a width relatively increasing as the through-silicon via extends toward the second surface;

a blocking layer on the first surface;

a first insulating layer on the blocking layer; and

a contact plug contacting the through-silicon via and extending through the first insulating layer and the blocking layer.