Ceramic electronic component

1. A ceramic electronic component, comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body and connected to the internal electrode,

wherein the dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains,

wherein the grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent,

wherein the rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb, and

wherein the first subcomponent includes at least one of Si, Mg, and Al.

2. The ceramic electronic component of claim 1 , wherein, when an element ratio of Sn, the rare-earth element, and the first subcomponent included in the secondary phase is Sn:rare-earth element:first subcomponent=1:x:y, x is 0.01 to 10.0, and y is 0.01 to 10.0.

3. The ceramic electronic component of claim 1 , wherein the rare-earth element includes Dy, and the first subcomponent includes Si.

4. The ceramic electronic component of claim 1 ,

wherein the plurality of grains include at least one first grain,

wherein the first grain has a core-shell structure including a core and a shell surrounding the core, and the shell of the first grain includes a first region surrounding the core and a second region surrounding the first region, and

wherein an average Sn content of the grain boundary is defined as Cg, Sn average contents of the core, the first region, and the second region of the first grain are defined as C1, C2 and C3, respectively, and C2, Cg, C3, and C1 satisfy C2>Cg>C3>C1.

5. The ceramic electronic component of claim 4 , wherein Cg, C1, C2, and C3 satisfy at least one of Cg≥1.1*C3, Cg≥2.0*C1 and C2≥1.3*Cg.

6. The ceramic electronic component of claim 4 , wherein an average rare-earth element content of the grain boundary is defined as Cg′, average rare-earth element contents of the core, the first region, and the second region of the first grain are defined as C1′, C2′ and C3′, respectively, and C2′, Cg′, C3′, and C1′ satisfy C2′>Cg′>C3′>C1′.

7. The ceramic electronic component of claim 6 , wherein Cg′, C1′, C2′, C3′ satisfy at least one of Cg′≥1.1*C3′, Cg′≥2.0*C1′ and C2′≥1.3*Cg′.

8. The ceramic electronic component of claim 4 ,

wherein the plurality of grains include at least one second grain,

wherein the second grain has a core-shell structure including a core and a shell surrounding the core, and

wherein average Sn contents of the core and the shell of the second grain are defined as C4 and C5, respectively, and Cg, C5, and C4 satisfy Cg>C5>C4.

9. The ceramic electronic component of claim 8 , wherein Cg, C4, C5 satisfy Cg≥1.1*C5, and Cg≥3.0*C4.

10. The ceramic electronic component of claim 8 ,

wherein the plurality of grains includes at least one third grain, and

wherein Sn is uniformly distributed in the third grain.

11. The ceramic electronic component of claim 1 , wherein the number of the first grains is 5% or more and 50% or less of the total number of the plurality of grains.

12. The ceramic electronic component of claim 1 , wherein the plurality of grains include BaTiO 3 as a main component.

13. The ceramic electronic component of claim 1 , wherein an average thickness of the dielectric layer is 0.4 μm or less.

14. The ceramic electronic component of claim 1 , wherein an average thickness of the internal electrode is 0.4 μm or less.

15. A ceramic electronic component, comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body and connected to the internal electrode,

wherein the dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains,

wherein the plurality of grains include at least one first grain,

wherein the first grain has a core-shell structure including a core and a shell surrounding the core, and the shell of the first grain includes a first region surrounding the core and a second region surrounding the first region,

wherein an average Sn content of the grain boundary is defined as Cg, Sn average contents of the core, the first region, and the second region of the first grain are defined as C1, C2 and C3, respectively, and C2, Cg, C3, and C1 satisfy C2>Cg>C3>C1, and satisfy one or more of Cg≥1.1*C3, Cg≥2.0*C1 and C2≥1.3*Cg.

16. The ceramic electronic component of claim 15 , wherein an average rare-earth element content of the grain boundary is defined as Cg′, average rare-earth element contents of the core, the first region, and the second region of the first grain are defined as C1′, C2′ and C3′, respectively, and C2′, Cg′, C3′, and C1′ satisfy C2′>Cg′>C3′>C1′, and satisfy one or more of Cg′≥1.1*C3′, Cg′≥2.0*C1′ and C2′≥1.3*Cg′.

17. The ceramic electronic component of claim 15 ,

wherein the grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent.

18. The ceramic electronic component of claim 17 ,

wherein the rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb.

19. The ceramic electronic component of claim 17 ,

wherein the first subcomponent includes at least one of Si, Mg, and Al.

20. The ceramic electronic component of claim 17 , wherein the secondary phase includes Sn—Dy—Si.

21. A ceramic electronic component, comprising:

a body including a dielectric layer and an internal electrode; and

an external electrode disposed on the body and connected to the internal electrode,

wherein the dielectric layer includes a plurality of grains and a grain boundary disposed between adjacent grains,

wherein the plurality of grains include first grains, second grains, and third grains, the first grains, the second grains, and the third grains being different from each other,

wherein each of the first grains has a core-shell structure including a core and a shell surrounding the core, and the shell of the first grain includes a first region surrounding the core and a second region surrounding the first region, and Sn average contents of the core, the first region, and the second region of the first grain are different from each other,

each of the second grains has a core-shell structure including a core and a shell surrounding the core, and Sn average contents of the core and the shell of the second grain are different from each other,

each the third grains includes Sn more uniformly distributed than the first grains and the second grains, and

the number of the first grains is 5% or more and 50% or less of the total number of the plurality of grains.

22. The ceramic electronic component of claim 21 , wherein C2>Cg>C3>C1 is satisfied, in which Cg is an average Sn content of the grain boundary, C1 is the Sn average content of the core of the first grain, C2 is the Sn average content of the first region, and C3 is the Sn average content of the second region of the first grain.

23. The ceramic electronic component of claim 22 , wherein at least one of Cg≥1.1*C3, Cg≥2.0*C1 and C2≥1.3*Cg is satisfied.

24. The ceramic electronic component of claim 21 , wherein C2′>Cg′>C3′>C1′ is satisfied, in which Cg′ is an average rare-earth element content of the grain boundary, C1′ is an average rare-earth element content of the core of the first grain, C2′ is an average rare-earth element content of the first region, and C3 is an average rare-earth element content of the second region of the first grain.

25. The ceramic electronic component of claim 24 , wherein at which one of Cg′≥1.1*C3′, Cg′≥2.0*C1′ and C2′≥1.3*Cg′ is satisfied.

26. The ceramic electronic component of claim 21 , wherein Cg>C5>C4 is satisfied, in which Cg is an average Sn content of the grain boundary, C4 is the average Sn content of the core of the second grain, and C5 is the average Sn content of the shell of the second grain.

27. The ceramic electronic component of claim 26 , wherein Cg≥1.1*C5 and Cg≥3.0*C4 are satisfied.

28. The ceramic electronic component of claim 21 , wherein the grain boundary includes a secondary phase including Sn.