Ceramic electronic component
A ceramic electronic component includes a body including a dielectric layer and an internal electrode; and an external electrode disposed on the body and connected to the internal electrode. The dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains. The grain boundary includes a secondary phase including Sn, a rare-earth element, and a first subcomponent. The rare-earth element includes at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Sm, Tb, Tm, La, Gd and Yb. The first subcomponent includes at least one of Si, Mg, and Al.
1. A ceramic electronic component, comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains,
wherein the grain boundary includes Sn, a rare-earth element, and a first subcomponent,
wherein the first subcomponent includes at least one of Si, Mg, and Al.
2. The ceramic electronic component of claim 1 , wherein, when an element ratio of Sn, the rare-earth element, and the first subcomponent included in the grain boundary is Sn:rare-earth element:first subcomponent=1:x:y, x is 0.01 to 10.0, and y is 0.01 to 10.0.
3. The ceramic electronic component of claim 1 , wherein the rare-earth element includes Dy, and the first subcomponent includes Si.
4. The ceramic electronic component of claim 1 ,
wherein the plurality of grains include at least one first grain,
wherein the first grain has a core-shell structure including a core and a shell surrounding the core, and the shell of the first grain includes a first region surrounding the core and a second region surrounding the first region, and
wherein an average Sn content of the grain boundary is defined as Cg, Sn average contents of the core, the first region, and the second region of the first grain are defined as C 1 , C 2 and C 3 , respectively, and C 2 , Cg, C 3 , and C 1 satisfy C 2 >Cg>C 3 >C 1 .
5. The ceramic electronic component of claim 4 , wherein Cg, C 1 , C 2 , and C 3 satisfy at least one of Cg≥1.1*C 3 , Cg≥2.0*C 1 and C 2 ≥1.3*Cg.
6. The ceramic electronic component of claim 4 , wherein an average rare-earth element content of the grain boundary is defined as Cg′, average rare-earth element contents of the core, the first region, and the second region of the first grain are defined as C 1 ′, C 2 ′ and C 3 ′, respectively, and C 2 ′, Cg′, C 3 ′, and C 1 ′ satisfy C 2 ′>Cg′>C 3 ′>C 1 ′.
7. The ceramic electronic component of claim 6 , wherein Cg′, C 1 ′, C 2 ′, C 3 ′ satisfy at least one of Cg′≥1.1*C 3 ′, Cg′≥2.0*C 1 ′ and C 2 ′≥1.3*Cg′.
8. The ceramic electronic component of claim 4 ,
wherein the plurality of grains include at least one second grain,
wherein the second grain has a core-shell structure including a core and a shell surrounding the core, and
wherein average Sn contents of the core and the shell of the second grain are defined as C 4 and C 5 , respectively, and Cg, C 5 , and C 4 satisfy Cg>C 5 >C 4 .
9. The ceramic electronic component of claim 8 , wherein Cg, C 4 , C 5 satisfy Cg≥1.1*C 5 , and Cg≥3.0*C 4 .
10. The ceramic electronic component of claim 8 ,
wherein the plurality of grains includes at least one third grain, and
wherein Sn is uniformly distributed in the third grain.
11. The ceramic electronic component of claim 1 , wherein the number of the first grains is 5% or more and 50% or less of the total number of the plurality of grains.
12. The ceramic electronic component of claim 1 , wherein the plurality of grains include BaTiO 3 as a main component.
13. A ceramic electronic component, comprising:
a body including a dielectric layer and an internal electrode; and
an external electrode disposed on the body and connected to the internal electrode,
wherein the dielectric layer includes a plurality of grains and grain boundaries disposed between adjacent grains,
wherein the plurality of grains include at least one first grain,
wherein the first grain has a core-shell structure including a core and a shell surrounding the core, and the shell of the first grain includes a first region surrounding the core and a second region surrounding the first region,
wherein an average rare-earth element content of the grain boundary is defined as Cg′, average rare-earth element contents of the core, the first region, and the second region of the first grain are defined as C 1 ′, C 2 ′ and C 3 ′, respectively, and C 2 ′, Cg′, C 3 ′, and C 1 ′ satisfy C 2 ′>Cg′>C 3 ′>C 1 ′, and satisfy one or more of Cg′≥1.1*C 3 ′, Cg′≥2.0*C 1 ′ and C 2 ′≥1.3*Cg′.
14. The ceramic electronic component of claim 13 ,
wherein the grain boundary includes Sn, a rare-earth element, and a first subcomponent.
15. The ceramic electronic component of claim 14 ,
wherein the first subcomponent includes at least one of Si, Mg, and Al.
16. The ceramic electronic component of claim 14 , wherein the grain boundary includes includes Sn—Dy—Si.