Multilayer ceramic electronic component and method of manufacturing the same
A method of manufacturing a multilayer ceramic electronic component includes preparing a ceramic green sheet, forming an internal electrode pattern by applying a paste for an internal electrode including a conductive powder to the ceramic green sheet, forming a ceramic laminate structure by layering the ceramic green sheet on which the internal electrode pattern is formed, forming a body including a dielectric layer and an internal electrode by sintering the ceramic laminate structure, and forming an external electrode by forming an electrode layer on the body, and forming a conductive resin layer on the electrode layer, and the conductive powder includes a conductive metal and tin (Sn), and a content of tin (Sn) is 1.5 wt % or higher, based on a weight of the conductive metal.
1. A method of manufacturing a multilayer ceramic electronic component comprising:
preparing ceramic green sheets;
forming internal electrode patterns by applying a paste for internal electrodes including a conductive powder to the ceramic green sheets, wherein the conductive powder has a core-shell structure, a conductive metal is included in the core, tin (Sn) is included in the shell, and a content of tin (Sn) is 1.5 wt % or higher, based on a weight of the conductive metal;
forming a ceramic laminate structure by layering the ceramic green sheets on which the internal electrode patterns are formed;
forming a body including dielectric layers and internal electrodes by sintering the ceramic laminate structure, so that the dielectric layers are formed from the green sheets and the internal electrodes are formed from the internal electrode patterns to comprise a metal grain and a composite layer encapsulating the metal grain, the composite layer comprising nickel (Ni) and tin (Sn); and
forming an external electrode by forming an electrode layer on the body, and forming a conductive resin layer on the electrode layer.
2. The method of claim 1 , wherein the shell is formed by an atomic layer deposition process.
3. The method of claim 1 , wherein the conductive powder includes an alloy of tin (Sn) and the conductive metal.
4. The method of claim 1 , wherein the conductive powder additionally comprises at least one material selected from the group consisting of tungsten (W), molybdenum (Mo), chromium (Cr), cobalt (Co) and alloys thereof.
5. The method of claim 1 , wherein the conductive powder additionally comprises at least one material selected from the group consisting of copper (Cu), silver (Ag), palladium (Pd), platinum (Pt), rhodium (Rh), iridium (Ir), ruthenium (Ru), and alloys thereof.
6. The method of claim 1 , wherein the paste for an internal electrode additionally comprises sulfur (S) in a content of 300 ppm or less based on a content of the conductive powder.
7. The method of claim 1 , wherein the conductive metal is nickel (Ni).
8. The method of claim 1 , wherein the electrode layer is formed by applying a paste including glass and at least one material selected from the group consisting of copper (Cu), silver (Ag), nickel (Ni) and alloys thereof, and the conductive resin layer is formed by applying a paste including base resin and at least one material selected from the group consisting of copper (Cu), silver (Ag), nickel (Ni) and alloys thereof.
9. The method of claim 1 , wherein the composite layer has a thickness within a range of 1 to 15 nm.
10. The method of claim 1 , wherein the metal grain includes a nickel (Ni) grain.
11. The method of claim 1 , wherein 85%≤C, where C is a ratio of a length of a portion in which one of the internal electrodes extends to an overall length of the one of the internal electrodes.
12. The method of claim 1 , wherein one of the internal electrodes has a thickness of less than 1 μm, and one of the dielectric layers has a thickness of less than 2.8 μm.
13. The method of claim 1 , wherein one of the internal electrodes has a thickness of less than 1 μm.
14. The method of claim 1 , wherein one of the dielectric layers has a thickness of less than 2.8 μm.
15. The method of claim 1 , wherein td>2*te, where to is a thickness of one of the internal electrodes, and td is a thickness of the one of the dielectric layers.
16. The method of claim 1 , wherein the conductive metal included in the core is a nickel (Ni) powder.