Multilayer ceramic capacitor including dielectric layers having improved reliability
A multilayer ceramic capacitor includes: a ceramic body including dielectric layers and first internal electrodes and second internal electrodes disposed to face each other with one of the dielectric layers interposed therebetween; and first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively. The dielectric layer includes dielectric grains, a grain boundary is present between at least two dielectric grains of the dielectric grains, and a Si/Ti mole ratio in the grain boundary satisfies 15% to 40%.
1. A multilayer ceramic capacitor comprising:
a ceramic body including dielectric layers including Ti and first internal electrodes and second internal electrodes disposed to face each other with one of the dielectric layers interposed therebetween; and
first and second external electrodes disposed on external surfaces of the ceramic body and electrically connected to the first and second internal electrodes, respectively,
wherein the dielectric layers include dielectric grains, and a grain boundary is present between at least two dielectric grains of the dielectric grains,
wherein the dielectric layers include:
a first accessory component containing an oxide or a carbonate containing at least one of Mn, V, Cr, Fe, Ni, Co, Cu or Zn, the first accessory component having a content of 0.05 to 2.0 mol % based on 100 mol % of Ti contained in the dielectric layers,
a second accessory component containing an oxide or a carbonate containing Mg, the second accessory component having a content of 0.0 to 2.0 mol % based on 100 mol % of the Ti contained in the dielectric layers,
a third accessory component containing an oxide or a carbonate containing at least one of Y, Dy, Ho, Er, Gd, Ce, Nd, Pm, Eu, Tb, Tm, Yb, Lu or Sm, the third accessory component having a content of 0.0 to 4.0 mol % based on 100 mol % of the Ti contained in the dielectric layers,
a fourth accessory component containing an oxide or a carbonate containing Ba, the fourth accessory component having a content of 0.0 to 4.15 mol % based on 100 mol % of the Ti contained in the dielectric layers,
a fifth accessory component containing an oxide or a carbonate containing at least one of Ca or Zr, the fifth accessory component having a content of 0.0 to 20.0 mol % based on 100 mol % of the Ti contained in the dielectric layers, and
a sixth accessory component containing an oxide containing at least one of Si or Al, or a glass compound containing Si, the sixth accessory component having a content of 0.0 to 4.0 mol % based on 100 mol % of the Ti contained in the dielectric layers,
a Si/Ti mole ratio in the grain boundary satisfies 15% to 40%, and
wherein the first and second internal electrodes have a thickness of 0.4 μm or less.
2. The multilayer ceramic capacitor of claim 1 , wherein the grain boundary has a thickness of 1.5 nm to 5 nm.
3. The multilayer ceramic capacitor of claim 2 , wherein the dielectric layer has a thickness of 0.4 μm or less.
4. The multilayer ceramic capacitor of claim 1 , wherein the dielectric grain has a core-shell structure.
5. The multilayer ceramic capacitor of claim 4 , wherein the grain boundary has a thickness of 0.2 nm to 5 nm.
6. The multilayer ceramic capacitor of claim 4 , wherein in the dielectric grain, the Si/Ti mole ratio increases from the core toward the shell and the grain boundary.
7. The multilayer ceramic capacitor of claim 4 , wherein the Si/Ti mole ratio in the core is less than 1%.
8. The multilayer ceramic capacitor of claim 4 , wherein the Si/Ti mole ratio in the shell is less than 5%.
9. The multilayer ceramic capacitor of claim 1 , wherein the ceramic body includes an active portion including the first and second internal electrodes disposed to face each other with one of the dielectric layers interposed therebetween, and cover portions disposed on upper and lower parts of the active portion, respectively.
10. The multilayer ceramic capacitor of claim 9 , wherein the Si/Ti mole ratio of the grain boundary of the dielectric grain included in the dielectric layers in the cover portions is higher than the Si/Ti mole ratio of the grain boundary of the dielectric grain included in the dielectric layers in the active portion.
11. The multilayer ceramic capacitor of claim 9 , wherein the Si/Ti mole ratio of the grain boundary of the dielectric grain included in the dielectric layers in the cover portions is 15% to 50%.
12. The multilayer ceramic capacitor of claim 1 , wherein the dielectric layer includes Si having a size of 10 nm or less.
13. The multilayer ceramic capacitor of claim 1 , wherein the grain boundary has a thickness of 0.2 nm to 5 nm.