Memory devices including transistors on multiple layers
View Patent ↗A semiconductor device including a substrate, a first layer over the substrate, and a second layer over the first layer. The first layer including a first fin structure, a first gate structure that overlaps the first fin structure to form a first pass-gate transistor, and a second gate structure that is separate from the first gate structure and that overlaps the first fin structure to form a first pull-down transistor. The second layer including a third gate structure disposed over the second gate structure and connected to the second gate structure, a first semiconductor oxide structure disposed on the third gate structure, and a first drain/source region and a second drain/source region disposed on the first semiconductor oxide structure, wherein the third gate structure, the first semiconductor oxide structure, the first drain/source region, and the second drain/source region constitute a first pull-up transistor.
1 . A semiconductor device, comprising:
a substrate;
a first layer over the substrate, comprising:
a first fin structure;
a first gate structure that overlaps the first fin structure to form a first pass-gate transistor; and
a second gate structure that is separate from the first gate structure and that overlaps the first fin structure to form a first pull-down transistor; and
a second layer over the first layer, comprising:
a third gate structure disposed over the second gate structure and connected to the second gate structure;
a first semiconductor oxide structure disposed on the third gate structure; and
a first drain/source region and a second drain/source region disposed on the first semiconductor oxide structure, wherein the third gate structure, the first semiconductor oxide structure, the first drain/source region, and the second drain/source region constitute a first pull-up transistor,
wherein the first pass-gate transistor and the first pull-down transistor are p-type transistors, and the first pull-up transistor is an n-type transistor.
2 . The semiconductor device of claim 1 , wherein the first layer comprises:
a second fin structure that is separate from the first fin structure;
a fourth gate structure that overlaps the second fin structure to form a second pull-down transistor; and
a fifth gate structure that is separate from the fourth gate structure and that overlaps the second fin structure to form a second pass-gate transistor.
3 . The semiconductor device of claim 2 , wherein the second layer comprises:
a sixth gate structure that is disposed over the fourth gate structure and connected to the fourth gate structure;
a second semiconductor oxide structure that is disposed on the sixth gate structure; and
a third drain/source region and a fourth drain/source region disposed on the second semiconductor oxide structure, wherein the sixth gate structure, the second semiconductor oxide structure, the third drain/source region, and the fourth drain/source region constitute a second pull-up transistor.
4 . The semiconductor device of claim 3 , wherein the first pull-up transistor and the second pull-up transistor are situated in an area defined by a length and a width of the first pass-gate transistor, the first pull-down transistor, the second pass-gate transistor, and the second pull-down transistor.
5 . The semiconductor device of claim 2 , comprising a third layer over the second layer, the second layer comprising:
a sixth gate structure that is disposed over the fourth gate structure and connected to the fourth gate structure;
a second semiconductor oxide structure that is disposed on the sixth gate structure; and
a third drain/source region and a fourth drain/source region disposed on the second semiconductor oxide structure, wherein the sixth gate structure, the second semiconductor oxide structure, the third drain/source region, and the fourth drain/source region constitute a second pull-up transistor.
6 . The semiconductor device of claim 5 , wherein the first pull-up transistor and the second pull-up transistor are situated in an area defined by a length and a width of the first pass-gate transistor, the first pull-down transistor, the second pass-gate transistor, and the second pull-down transistor.
7 . The semiconductor device of claim 1 , wherein the first semiconductor oxide structure includes indium gallium zinc oxide (IGZO) and/or indium tin oxide (ITO).
8 . The semiconductor device of claim 1 , comprising interconnect layers disposed over the second layer and including a word line connected to the first gate structure and a power line connected to the first drain/source region.
9 . The semiconductor device of claim 1 , comprising interconnect layers disposed over the second layer and including a bit line and a reference connected to the first fin structure.
10 . A semiconductor device, comprising:
a substrate;
a first layer over the substrate, comprising:
a first fin structure; and
a first gate structure that overlaps the first fin structure to form a first p-type pull-down transistor; and
a second layer over the first layer, comprising:
a second gate structure disposed over the first gate structure and connected to the first gate structure; and
a first semiconductor oxide structure disposed on the second gate structure, wherein the second gate structure and the first semiconductor oxide structure form a first n-type pull-up transistor.
11 . The semiconductor device of claim 10 , wherein the first semiconductor oxide structure includes a first drain/source region and a second drain/source region disposed on the first semiconductor oxide structure, wherein the second gate structure, the first semiconductor oxide structure, the first drain/source region, and the second drain/source region form the first n-type pull-up transistor.
12 . The semiconductor device of claim 10 , wherein the first layer comprises:
a second fin structure that is separate from the first fin structure;
a third gate structure that overlaps the second fin structure to form a second p-type pull-down transistor; and
a fourth gate structure that is separate from the third gate structure and that overlaps the second fin structure to form a p-type pass-gate transistor.
13 . The semiconductor device of claim 12 , wherein the second layer comprises:
a fifth gate structure that is disposed over the third gate structure and connected to the third gate structure; and
a second semiconductor oxide structure that is disposed on the fifth gate structure, wherein the fifth gate structure and the second semiconductor oxide structure form a second n-type pull-up transistor.
14 . The semiconductor device of claim 10 , comprising:
a third gate structure that is separate from the first gate structure and that overlaps the first fin structure to form a p-type pass-gate transistor.
15 . The semiconductor device of claim 10 , wherein the first semiconductor oxide structure includes indium gallium zinc oxide (IGZO) and/or indium tin oxide (ITO).
16 . A semiconductor device, comprising:
a substrate;
a first layer over the substrate, comprising:
a first fin structure;
a first gate structure that overlaps the first fin structure to form a first pass-gate transistor, wherein the first pass-gate transistor is a p-type transistor; and
a second gate structure that is separate from the first gate structure and that overlaps the first fin structure to form a first pull-down transistor, wherein the first pull-down transistor is a p-type transistor; and
a second layer over the first layer, comprising:
a third gate structure disposed over the second gate structure and connected to the second gate structure;
a first semiconductor oxide structure disposed on the third gate structure, wherein the first semiconductor oxide structure includes indium gallium zinc oxide; and
a first drain/source region and a second drain/source region disposed on the first semiconductor oxide structure, wherein the third gate structure, the first semiconductor oxide structure, the first drain/source region, and the second drain/source region form a first pull-up transistor that is an n-type transistor.
17 . The semiconductor device of claim 16 , wherein the first layer comprises:
a second fin structure that is separate from the first fin structure;
a fourth gate structure that overlaps the second fin structure to form a second pull-down transistor; and
a fifth gate structure that is separate from the fourth gate structure and that overlaps the second fin structure to form a second pass-gate transistor.
18 . The semiconductor device of claim 17 , wherein the second layer comprises:
a sixth gate structure that is disposed over the fourth gate structure and connected to the fourth gate structure;
a second semiconductor oxide structure that is disposed on the sixth gate structure; and
a third drain/source region and a fourth drain/source region disposed on the second semiconductor oxide structure, wherein the sixth gate structure, the second semiconductor oxide structure, the third drain/source region, and the fourth drain/source region form a second pull-up transistor.
19 . The semiconductor device of claim 18 , wherein the first pull-up transistor and the second pull-up transistor are situated in an area defined by a length and a width of the first pass-gate transistor, the first pull-down transistor, the second pass-gate transistor, and the second pull-down transistor.
20 . The semiconductor device of claim 16 , comprising interconnect layers disposed over the second layer and including a word line connected to the first gate structure, a power line connected to the first drain/source region, a bit line connected to the first fin structure, and a reference connected to the first fin structure.