Wet bench process with in-situ pre-treatment operation
Embodiments of the present disclosure relates to a wet bench processing including an in-situ pre-treatment prior to performing the first set of wet bench operations. The pre-treatment may include a pre-clean operation and/or a pre-heat operation. The pre-treatment may be performed in one of the existing ONB tanks without requiring adding new tanks to an existing wet bench tool. The pre-clean operation removes particles from a batch of wafers to avoid or reduce cross-contamination and defect issues, thus improving the yield rate of the wet bench process. The pre-heat operation provides better control and stabilize the temperature in the CHB tank to stabilize the process, such as to stabilize an etch rate.
1. A method, comprising:
loading a batch of wafers into a wet bench tool comprising a CHB (concentrated heated bath) tank and a first ONB (once through bath) tank, wherein the batch of wafers are at a first temperature,
upon loading the batch of wafers, pre-treating the batch of wafers in the first ONB tank with a pre-treatment solution;
immersing the batch of wafers in a process solution stored in the CHB tank after pre-treating the batch of wafers in the first ONB tank, wherein the process solution is at a second temperature, the second temperature is higher than the first temperature, pre-treatment solution comprises a first chemical at a first concentration, the process solution comprises the first chemical at a second concentration, and the second concentration is higher than the first concentration; and
rinsing the batch of wafers in a rinse solution,
wherein pre-treating the batch of wafers further comprises rinsing the batch of wafers with a hot deionized water to heat the batch of wafers to a third temperature, the third temperature is higher than the first temperature and lower than the second temperature.
2. The method of claim 1 , wherein rinsing the batch of wafers in the rinse solution is performed in the first ONB tank.
3. The method of claim 1 , wherein pre-treating the batch of wafers comprises rinsing the batch of wafers with the pre-treatment solution in the first ONB tank.
4. The method of claim 3 , wherein the pre-treatment solution includes hot deionized water to heat the batch of wafers to the third temperature.
5. The method of claim 1 , wherein the wet bench tool further comprises a second ONB tank, and rinsing the batch of wafers in the rinse solution is performed in the second ONB tank.
6. The method of claim 1 , wherein the rinse solution comprises the first chemical at a third concentration lower than the second concentration.
7. The method of claim 1 , wherein the first chemical comprises one of phosphoric acid (H 3 PO 4 ), buffered hydrofluoric acid (BHF), peroxymonosulfuric acid (H 2 SO 5 ), and hydrofluoric acid (HF).
8. The method of claim 1 , wherein pre-treating the batch of wafers further comprises: prior to rinsing the batch of wafers with a hot deionized water to heat the batch of wafers to a third temperature,
dipping the batch of wafers in the pre-treatment solution in the first OBN tank; and
draining the pre-treatment solution from the first OBN tank.
9. The method of claim 8 , wherein pre-treating the batch of wafers further comprises: prior to dipping the batch wafers in the pre-treatment solution, spraying a cleaning solution over the batch of wafers.
10. The method of claim 1 , wherein rinsing the batch of wafers with a hot deionized water for about 5 minutes to about 9 minutes.
11. A method comprising:
pre-heating a batch of wafers from a first temperature to a second temperature in a ONB tank of a wet bench tool, wherein the second temperature is a range between about 65° C. and about 95° C.;
upon completion of pre-heating, moving the batch of wafers from the ONB tank to a CHB tank in the wet bench tool to immerse the batch of wafers in a processing solution in the CHB tank, wherein the processing solution is at a third temperature prior to immersing the batch of wafers, and the third temperature is higher than the second temperature;
moving the batch of wafers from the CHB tank to the ONB tank to rinse the batch of wafers in the ONB tank with a rinsing solution;
prior to pre-heating the batch of wafers,
pre-cleaning the batch of wafers in the ONB tank with a pre-cleaning solution; and
draining the ONB tank.
12. The method of claim 11 , wherein the first temperature is room temperature, and third temperature is in a range between 140° C. and 160° C.
13. The method of claim 11 , wherein pre-heating the batch of wafers comprising rinsing the batch of wafers with heated deionized water.
14. The method of claim 11 , wherein pre-cleaning the batch of wafers comprises:
rinsing the batch of wafers with the pre-cleaning solution; and
dipping the batch of wafers in the pre-cleaning solution in the ONB tank.
15. The method of claim 11 , wherein the pre-cleaning solution is a diluted solution of the processing solution.
16. The method of claim 15 , wherein the pre-cleaning solution is at room temperature.
17. A method, comprising:
loading a batch of wafers into a wet bench tool comprising a tank set, wherein the tank set comprises:
a CHB tank having a processing solution, wherein the processing solution being recirculated; and
a ONB tank in connection with one or more chemical supply bath and a heater;
upon loading the batch of wafers, pre-treating the batch of wafers in the ONB tank with a pre-cleaning solution supplied from the one or more chemical supply bath and a heated deionized water source, wherein pre-treating the batch of wafers comprises:
rinsing the batch of wafers with the pre-cleaning solution; and
dipping the batch of wafers in the pre-cleaning solution in the ONB tank,
wherein the pre-cleaning solution is a diluted solution of the processing solution;
after pre-treating the batch of wafers, performing a wet bench operation set comprising:
immersing the batch of wafers in the processing solution in the CHB tank; and
rinsing the batch of wafers in the ONB tank.
18. The method of claim 17 , wherein pre-treating the batch of wafers further comprises:
draining the pre-cleaning solution from the ONB tank; and
rinsing the batch of wafers with heated deionized water.
19. The method of claim 17 , wherein the processing solution comprises one of phosphoric acid (H 3 PO 4 ), buffered hydrofluoric acid (BHF), peroxymonosulfuric acid (H 2 SO 5 ), and hydrofluoric acid (HF).