Methods of treating semiconductor substrates, methods of forming openings during semiconductor fabrication, and methods of removing particles from over semiconductor substrates
Some embodiments include methods of treating semiconductor substrates. The substrates may be exposed to one or more conditions that vary continuously. The conditions may include temperature gradients, concentration gradients of one or more compositions that quench etchant, pH gradients to assist in removing particles, and/or concentration gradients of one or more compositions that assist in removing particles. The continuously varying conditions may be imparted by placing the semiconductor substrates in a bath of flowing rinsing solution, with the bath having at least two feed lines that provide the rinsing solution therein. One of the feed lines may be at a first condition, and the other may be at a second condition that is different from the first condition. The relative amount of rinsing solution provided to the bath by each feed line may be varied to continuously vary the condition within the bath.
1. A method of treating a semiconductor substrate comprising exposing the substrate to a composition to quench an etch process and remove particles, wherein said exposure to the composition comprises exposure to a continuously varying concentration gradient of the composition for a duration of at least three seconds; the continuously varying concentration gradient including repetitive iterations of increasing concentration from a low concentration to a high concentration and of decreasing concentration from the high concentration to the low concentration; the low and high concentrations differing from one another by at least a factor of ten.
2. The method of claim 1 wherein the composition includes one or more inorganic acids.
3. The method of claim 1 wherein the composition includes one or more organic acids.
4. The method of claim 1 wherein the composition includes one or more inorganic bases.
5. The method of claim 1 wherein the composition includes one or more organic bases.
6. A method of treating a semiconductor substrate, comprising:
providing a semiconductor substrate having an electrically insulative material thereon;
etching the electrically insulative material; and
substantially ceasing the etching and removing particles from the substrate by rinsing the substrate with a solution comprising a continuously varying concentration of passivating material; the continuously varying concentration including repetitive iterations of increasing the concentration of the passivating material from a low concentration to a high concentration and of decreasing the concentration of the passivating material from the high concentration to the low concentration; the low and high concentrations differing from one another by at least a factor of ten.
7. The method of claim 6 wherein the passivating material is hydrogen chloride.
8. The method of claim 6 wherein the passivating material comprises a base.
9. The method of claim 6 wherein the passivating material comprises an acid.
10. The method of claim 6 wherein the electrically insulative material is selected from the group consisting of borophophosilicate glass, silicon dioxide and silicon nitride.
11. A method of forming openings during semiconductor fabrication, comprising:
forming a patterned mask over a material, the mask having one or more openings extending therethrough;
extending the one or more openings into the material by etching the material with an etchant; and
substantially ceasing the etching by rinsing the substrate with a solution comprising a continuously varying concentration of passivating material and varying the temperature from a low temperature to a higher temperature and back to the low temperature; the continuously varying concentration including repetitive iterations of increasing the concentration of the passivating material from a low concentration to a high concentration and of decreasing the concentration of the passivating material from the high concentration to the low concentration; the low and high concentrations differing from one another by at least a factor of ten.
12. The method of claim 11 wherein the passivating material comprises hydrogen chloride.
13. The method of claim 11 wherein the passivating material comprises an acid or a base.
14. The method of claim 11 wherein the etchant is selected from the group consisting of piranha solution and QE2 solution.
15. The method of claim 11 further comprising ceasing temperature variance and exposing the substrate to static temperature conditions.
16. The method of claim 1 further comprising ceasing variance of concentration of the composition and exposing the substrate to static concentration of the composition.