Ultraviolet sensors and methods using integrated silicon carbide lateral junction field-effect transistors

1. A photodetection circuit for ultraviolet light, the circuit comprising:

a silicon carbide junction field effect transistor with an outer surface, the silicon carbide junction field effect transistor including a transistor gate junction positioned proximate to the outer surface to receive ultraviolet light;

a reverse bias circuit connected to the transistor gate junction to provide a reverse bias voltage;

the ultraviolet light and reverse bias voltage inducing a photo current at the transistor gate junction.

2. The circuit of claim 1 , further comprising:

the silicon carbide junction field effect transistor including a drain to source connection;

a power supply connected across the drain to source connection;

a positive bias circuit connected to the transistor gate junction to provide a positive bias voltage;

the positive bias voltage inducing a transistor current at the drain to source connection.

3. A method for utilizing a silicon carbide junction field effect transistor as both a transistor and as a photo detector, the method comprising:

providing a silicon carbide junction field effect transistor with an outer surface, the silicon carbide junction field effect transistor including a drain to source connection and a transistor gate junction positioned proximate to the outer surface to receive ultraviolet light;

providing a power supply connected across the drain to source connection to provide a transistor power flow;

providing a variable biasing circuit at the transistor gate junction for providing a positive bias or alternatively providing a negative bias;

providing a positive bias to control the transistor power flow; and

providing a negative bias and receiving ultraviolet light at the transistor gate junction to induce a photo current through the transistor gate junction.