Heat sink, semiconductor package and semiconductor module
Provided is a heat sink having a clad structure of Co—Mo composite materials and Cu materials, satisfying high heat-sink properties required of the heat sink for use in a semiconductor package with a frame on which a high-output and small-sized semiconductor is mounted, and preventing, when applied to the semiconductor package with a frame, crack of the frame due to local stress concentration. The heat sink has three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that the Cu layers are outermost layers on both sides thereof, the Cu layers as the outermost layers each having a thickness t 1 of 40 μm or more, the heat sink satisfying 0.06≤t 1 /T≤0.27 (where T: heat sink thickness) and t 2 /T≤0.36/[(total number of layers−1)/2] (where t 2 : Cu—Mo composite layer thickness, the total number of layers: sum of numbers of Cu layers and Cu—Mo composite layers).
1. A heat sink comprising three or more Cu layers and two or more Cu—Mo composite layers alternately stacked in a thickness direction so that the two of the Cu layers are outermost layers on both sides thereof, wherein
the Cu—Mo composite layers each have a thickness section microstructure in which a flat Mo phase is dispersed in a Cu matrix,
the Cu layers as the outermost layers on both sides each have a thickness t 1 of 40 μm or more,
the heat sink satisfies 0.06≤t 1 /T≤0.27, where T denotes a heat sink thickness, and t 2 /T≤0.36/[(total number of layers−1)/2], where t 2 denotes a thickness of each of the Cu—Mo composite layers and the total number of layers is a sum of the number of the Cu layers and the number of the Cu—Mo composite layers.
2. The heat sink according to claim 1 , which satisfies t 2 /T≤0.30/[(total number of layers−1)/2], where the total number of layers is a sum of the number of the Cu layers and the number of the Cu—Mo composite layers.
3. The heat sink according to claim 1 , which satisfies 0.10≤t 1 /T≤0.27.
4. The heat sink of according to claim 1 , which satisfies 0.10≤t 1 /T≤0.20.
5. The heat sink according to claim 1 , the Cu—Mo composite layers each have a Mo content of 50 mass % or more and 80 mass % or less.
6. The heat sink according to claim 1 wherein the Cu—Mo composite layers each have a structure in which a plurality of unit Cu—Mo composite layers are stacked with a Cu layer for bonding having a thickness of 75 μm or less being interposed therebetween.
7. The heat sink according to claim 1 , comprising a thermal conductivity in the thickness direction of 250 W/m·K or more, and an average coefficient of thermal expansion in an in-plane direction from 50° C. to 800° C. of 10.0 ppm/K or less.
8. The heat sink according to claim 1 , comprising a coating or plating on one or both sides thereof.
9. A semiconductor package comprising the heat sink according to claim 1 .
10. The semiconductor package according to claim 9 , comprising a structure in which a frame made of ceramic or metal with a low coefficient of thermal expansion is bonded to the heat sink and a semiconductor is bonded to the heat sink inside the frame.
11. A semiconductor module comprising the semiconductor package according to claim 9 .