IP Library › Granted Patent US 12,315,694
Granted Patent B2
US 12,315,694 · App. 17/757,133 · Granted May 27, 2025

Electron beam system

Inventor: Shuai Li (Beijing, CN)
Assignee: FOCUS-EBEAM TECHNOLOGY (BEIJING) CO., LTD.
H01J37/1474H01J37/10H01J37/244H01J37/28
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Quick Facts
Patent No.
US 12,315,694
App. No.
17/757,133
Granted
May 27, 2025
Kind
B2
Abstract

Provided is an electron beam system, including: an electron source, configured to generate an electron beam; a first beam guide, configured to accelerate the electron beam; a second beam guide, configured to accelerate the electron beam; a first control electrode arranged between the first beam guide and the second beam guide, configured to change movement directions of backscattered electrons and secondary electrons generated by the electron beam acting on a specimen to be tested; a first detector arranged between the first beam guide and the first control electrode, configured to receive the backscattered electrons generated by the electron beam acting on the specimen to be tested. The first control electrode according to the embodiments of the present disclosure changes the movement directions of the backscattered electrons and secondary electrons generated by the electron beam generated by the electron source acting on the specimen to be tested, so that the first detector arranged between the first beam guide and the first control electrode can receive pure backscattered electrons generated by the electron beam acting on the specimen to be tested.

Claims (22)

1. An electron beam system, comprising:

an electron source, configured to generate an electron beam;

a first beam guide, configured to accelerate the electron beam;

a second beam guide, configured to accelerate the electron beam;

a first control electrode arranged between the first beam guide and the second beam guide, configured to change movement directions of backscattered electrons and secondary electrons generated by the electron beam acting on a specimen to be tested;

a first detector arranged between the first beam guide and the first control electrode, configured to receive the backscattered electrons generated by the electron beam acting on the specimen to be tested;

a first lens device arranged on an outer periphery of the first beam guide, configured to converge the electron beam;

a second lens device arranged on an outer periphery of the second beam guide, configured to converge the electron beam;

a third detector arranged between an upper pole piece of the second lens device and a lower pole piece of the second lens device, configured to receive backscattered electrons generated by the electron beam acting on the specimen to be tested; and

a third control electrode arranged between the upper pole piece of the second lens device and the third detector.

2. The electron beam system of claim 1 , wherein the first control electrode is of an annular shape, and a thickness of a radial cross-section of the first control electrode is gradually increased in a direction outwardly from a center of a circle.

3. The electron beam system of claim 1 , wherein the first control electrode is of an annular shape, and a radial cross-section of the first control electrode is of a rectangular, triangular, or trapezoidal shape.

4. The electron beam system of claim 1 , further comprising:

a shielding device, wherein the shielding device is of an annular shape, and a radial cross-section of the shielding device in a direction outwardly from a center of a circle is a groove opening outward; and

a second detector arranged in the groove of the shielding device, configured to receive secondary electrons generated by the electron beam acting on the specimen to be tested,

wherein a second control electrode is arranged between the second detector and the groove of the shielding device.

5. The electron beam system of claim 4 , wherein the shielding device has a porous structure, and the shielding device is arranged on an upper end of the second beam guide.

6. The electron beam system of claim 1 , wherein the third control electrode is of an annular shape, and a radial cross-section of the third control electrode is L-shaped; and

the third detector is connected to the third control electrode in insulation.

7. The electron beam system of claim 1 , further comprising:

a fourth control electrode, arranged between a lower pole piece of the second lens device and the specimen to be tested;

wherein the first detector is arranged on a lower end of the first beam guide.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2025
From: FOCUS-EBEAM TECHNOLOGY (BEIJING) CO., LTD.
To: NINGBO BIO-EBEAM ELECTRON BEAM TECHNOLOGY CO., LTD.
Reel/Frame 071721/0490 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 9, 2022
From: LI, SHUAI
To: FOCUS-EBEAM TECHNOLOGY (BEIJING) CO., LTD.
Reel/Frame 060154/0453 →
Priority Claims (1)
CN 202011389634.2 · Dec 2, 2020 · national
Continuity (1)
Related Publication 20230317404A1 · Oct 5, 2023
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