REFLECTIVE MASK AND PRODUCTION METHOD FOR REFLECTIVE MASK
There are provided a reflective mask having a coating film uniformly formed along the outermost surface and the side surfaces of a transfer pattern, having high EUV transmittance, and having high cleaning resistance and a production method therefor. To achieve the object, for example, a reflective mask ( 100 ) includes: a substrate ( 1 ); a multilayer reflective film ( 2 ) formed on the substrate ( 1 ) and reflecting an incident EUV light; an absorption layer ( 4 ) formed on at least a part of the multilayer reflective film ( 2 ) and absorbing the incident EUV light; and a coating film ( 5 ) formed on the multilayer reflective film ( 2 ) and on the absorption layer ( 4 ) and transmitting the incident EUV light, in which the coating film ( 5 ) has an extinction coefficient k of 0.04 or less to the EUV light, is resistant to cleaning with a cleaning chemical solution, and is formed with a uniform film thickness on the surface and the side surfaces of the absorption layer ( 4 ).
1 . A reflective mask comprising:
a substrate;
a reflective portion formed on the substrate and reflecting an incident light;
an absorption portion formed on at least a part of the reflective portion and absorbing the incident light; and
a coating film formed on the reflective portion and the absorption portion and transmitting the incident light, wherein
the coating film has an extinction coefficient k of 0.04 or less to an extreme ultraviolet (EUV: wavelength of 13.5 nm) light, is resistant to cleaning with a cleaning chemical solution, and is formed with a uniform film thickness on an outermost surface and side surfaces of the absorption portion.
2 . The reflective mask according to claim 1 , wherein the coating film is formed of a compound containing at least one of silicon dioxide, silicon nitride, aluminum oxide, ruthenium, zirconium, chromium, hafnium, niobium, rhodium, tungsten, vanadium, and titanium.
3 . The reflective mask according to claim 1 , wherein the absorption portion is formed of a compound containing at least one of tantalum, tin, indium, nickel, osmium, hafnium, tungsten, platinum, tellurium, cobalt, and palladium.
4 . A production method for the reflective mask according to claim 1 , the method comprising:
forming the coating film by an atomic layer deposition method.
5 . The production method for the reflective mask according to claim 4 , wherein, in the formation of the coating film, the coating film is formed by the atomic layer deposition method using a metal hydride, a metal halide, or an organometallic compound as a material gas.
6 . The reflective mask according to claim 2 , wherein the absorption portion is formed of a compound containing at least one of tantalum, tin, indium, nickel, osmium, hafnium, tungsten, platinum, tellurium, cobalt, and palladium.
7 . A production method for the reflective mask according to claim 2 , the method comprising:
forming the coating film by an atomic layer deposition method.
8 . A production method for the reflective mask according to claim 3 , the method comprising:
forming the coating film by an atomic layer deposition method.