Semiconductor structures and manufacturing methods thereof
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure may include: a first epitaxial layer disposed on a substrate; a bonding layer disposed on the first epitaxial layer (where the bonding layer is provided with a first through-hole to expose the first epitaxial layer); a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer (where the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole); a silicon device disposed on the silicon substrate; and a second epitaxial layer disposed on the first epitaxial layer exposed by the first through-hole. The present disclosure can improve the quality of the second epitaxial layer, and realize the integration of a silicon device and a III-V semiconductor device.
1. A semiconductor structure, comprising:
a first epitaxial layer disposed on a substrate;
a bonding layer disposed on the first epitaxial layer, wherein the bonding layer is provided with a first through-hole to expose the first epitaxial layer;
a silicon substrate disposed on a side of the bonding layer away from the first epitaxial layer, wherein the first epitaxial layer is bonded to the silicon substrate by the bonding layer, the silicon substrate is provided with a through-silicon-via, and the through-silicon-via communicates with the first through-hole;
a silicon device disposed on the silicon substrate; and
a second epitaxial layer disposed on the first epitaxial layer that is exposed by the first through-hole;
wherein the first through-hole and the through-silicon-via are fully filled with the second epitaxial layer, and a III-V semiconductor device is formed on the second epitaxial layer;
wherein the III-V semiconductor device is a light emitting diode (LED) or high electron mobility transistor (HEMT);
wherein the III-V semiconductor device is electrically connected to the silicon device through a metal interconnection member.
2. The semiconductor structure of claim 1 , wherein the second epitaxial layer is a part of the III-V semiconductor device.
3. The semiconductor structure of claim 1 , wherein the through-silicon-via has a depth to width ratio greater than 4.
4. The semiconductor structure of claim 1 , wherein the silicon substrate comprises single crystal silicon with <100> orientation.
5. The semiconductor structure of claim 1 , wherein the first epitaxial layer and the second epitaxial layer have the same material system which comprises at least one of GaN, AlN, AlGaN, InGaN, or AlInGaN.
6. The semiconductor structure of claim 1 , further comprising:
a first dielectric layer disposed on a side of the silicon substrate away from the bonding layer, wherein the first dielectric layer is provided with a second through-hole communicating with the through-silicon-via, the second epitaxial layer fully fills the first through-hole, the through-silicon-via and the second through-hole and protrudes from the second through-hole.
7. The semiconductor structure of claim 1 , wherein a sidewall of the through-silicon-via has a second dielectric layer.
8. A manufacturing method of a semiconductor structure, comprising:
providing a first epitaxial layer and a silicon substrate, wherein the first epitaxial layer is disposed on a substrate;
bonding the first epitaxial layer and the silicon substrate by a bonding layer;
forming a through-silicon-via in the silicon substrate;
forming a first through-hole in the bonding layer to expose the first epitaxial layer, wherein the first through-hole communicates with the through-silicon-via;
forming a silicon device on the silicon substrate;
forming a second epitaxial layer on the first epitaxial layer exposed by the first through-hole;
forming a III-V semiconductor device on the second epitaxial layer, wherein the III-V semiconductor device is a light emitting diode (LED) or high electron mobility transistor (HEMT); and
forming a metal interconnect member to electrically connect the III-V semiconductor device to the silicon device.
9. The manufacturing method of claim 8 ,
wherein the second epitaxial layer is a part of the III-V semiconductor device.
10. The manufacturing method of claim 9 , wherein the through-silicon-via has a depth to width ratio greater than 4.
11. The manufacturing method of claim 8 , wherein before forming the second epitaxial layer on the first epitaxial layer exposed by the first through-hole, the manufacturing method further comprises:
forming a first dielectric layer on a side of the silicon substrate away from the bonding layer, wherein the first dielectric layer is provided with a second through-hole communicating with the through-silicon-via, the second epitaxial layer fully fills the first through-hole, the through-silicon-via and the second through-hole and protrudes from the second through-hole, and a part of the second epitaxial layer protruding from the second through-hole is disposed on the first dielectric layer.
12. The manufacturing method of claim 8 , wherein the silicon device is formed on the silicon substrate before the silicon substrate is bonded to the first epitaxial layer; or
the silicon device is formed on the silicon substrate after the silicon substrate is bonded to the first epitaxial layer and before the through-silicon-via is formed on the silicon substrate; or
the silicon device is formed on the silicon substrate after the silicon substrate is bonded to the first epitaxial layer, after the through-silicon-via are formed on the silicon substrate, and before or after the second epitaxial layer is formed on the first epitaxial layer.