Thin film transistor and array substrate each having active layer comprising multiple oxide layers arranged in a stack
A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.
1. A thin film transistor, comprising: a substrate and an active layer provided on the substrate, wherein
the active layer comprises multiple oxide layers arranged in a stack, the multiple oxide layers comprise a channel layer, a transition layer, and a first barrier layer, the channel layer is a layer with a highest carrier mobility in the multiple oxide layers, the channel layer is a crystalline oxide layer or an amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer in the multiple oxide layers, and the first barrier layer and the transition layer are both crystalline oxide layers;
a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are both greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are both larger than a band gap of the channel layer;
the transition layer is a first matching layer provided between the channel layer and the first barrier layer;
a carrier concentration of the first matching layer is between a carrier concentration of the channel layer and a carrier concentration of the first barrier layer;
a carrier mobility of the first matching layer is between a carrier mobility of the channel layer and a carrier mobility of the first barrier layer; and
a thickness of the first matching layer and a thickness of the channel layer are both smaller than a thickness of the first barrier layer.
2. The thin film transistor of claim 1 , wherein a slope angle of the multiple oxide layers is in a range of 25°-65°.
3. The thin film transistor according to claim 1 , wherein the first matching layer and the channel layer comprise same kinds of metal elements, and an atomic number ratio of the metal elements in the first matching layer and an atomic number ratio of the metal elements in the channel layer are the same.
4. The thin film transistor according to claim 1 , wherein the first barrier layer and the first matching layer comprise same kinds of metal elements, and an atomic number ratio of the metal elements in the first barrier layer and an atomic number ratio of the metal elements in the first matching layer are different from each other.
5. The thin film transistor according to claim 1 , wherein both the first matching layer and the first barrier layer are provided on a side of the channel layer facing away from the substrate, the channel layer is an amorphous or crystalline IGZO layer, the first matching layer and the first barrier layer are both crystalline IGZO layers, and In: Ga: Zn in each of the channel layer and the first matching layer is 4:2:3, and In: Ga: Zn in the first barrier layer is 1:3:6.
6. The thin film transistor according to claim 1 , wherein the multiple oxide layers further comprise a second barrier layer, the second barrier layer is provided on a side of the channel layer facing towards the substrate, the first barrier layer is provided on a side of the channel layer facing away from the substrate, and a band gap of the second barrier layer is larger than the band gap of the channel layer.
7. The thin film transistor of claim 6 , wherein the second barrier layer is a crystalline oxide layer, a crystallization degree of the second barrier layer is greater than the crystallization degree of the channel layer, the second barrier layer and the channel layer comprise same kinds of metal elements, and an atomic number ratio of the metal elements in the second barrier layer and an atomic number ratio of the metal elements in the channel layer are the same.
8. The thin film transistor according to claim 6 , wherein the channel layer is a crystalline or amorphous IGZO layer, the second barrier layer, the first matching layer, and the first barrier layer are all crystalline IGZO layers, In: Ga: Zn in each of the second barrier layer, the channel layer, and the first matching layer is 4:2:3, and In: Ga: Zn in the first barrier layer is 1:3:6.
9. The thin film transistor according to claim 6 , wherein the multiple oxide layers further comprise a second matching layer provided between the channel layer and the second barrier layer, the second matching layer is a crystalline oxide layer, a crystallization degree of the second matching layer is between the crystallization degree of the channel layer and a crystallization degree of the second barrier layer, the second matching layer, the channel layer, and the first matching layer comprise same kinds of metal elements and have a same atomic number ratio, and a thickness of the second matching layer is greater than a thickness of the first matching layer.
10. The thin film transistor according to claim 9 , wherein the channel layer is an amorphous or crystalline IGZO layer, the second barrier layer, the second matching layer, the first matching layer, and the first barrier layer are all crystalline IGZO layers, In: Ga: Zn in each of the second matching layer, the channel layer, and the first matching layer is 4:2:3, and In: Ga: Zn in each of the first barrier layer and the second barrier layer is 1:3:6.
11. The thin film transistor according to claim 1 , wherein the transition layer is a second barrier layer, the second barrier layer is provided on a side of the channel layer facing towards the substrate, the first barrier layer is provided on a side of the channel layer facing away from the substrate, and a band gap of the second barrier layer is larger than the band gap of the channel layer.
12. The thin film transistor of claim 11 , wherein the multiple oxide layers are three oxide layers which comprise the second barrier layer, the channel layer, and the first barrier layer, wherein the first barrier layer, the channel layer, and the second barrier layer comprise same kinds of metal elements, and an atomic number ratio of metal elements in the first barrier layer, an atomic number ratio of the metal elements in the channel layer, and an atomic number ratio of the metal elements in the second barrier layer are the same.
13. The thin film transistor according to claim 11 , wherein the channel layer is an amorphous or crystalline IGZO layer, the second barrier layer and the first barrier layer are both crystalline IGZO layers, In: Ga: Zn in each of the second barrier layer, the channel layer, and the first barrier layer is 4:2:3.
14. The thin film transistor of claim 11 , wherein the multiple oxide layers are three oxide layers which comprises the second barrier layer, the channel layer, and the first barrier layer, wherein the channel layer is an amorphous or crystalline IGZO layer, the first barrier layer and the second barrier layer are both crystalline IGZO layers, and In: Ga: Zn in the channel layer is 4:2:3, In: Ga: Zn in each of the second barrier layer and the first barrier layer is 1:3:6.
15. The thin film transistor according to claim 1 , wherein the first barrier layer is provided on a side of the channel layer facing away from the substrate, and a wettability of the first barrier layer to a photoresist is better than a wettability of a layer, which is in direct contact with the first barrier layer in the multiple oxide layers, to the photoresist.
16. The thin film transistor according to claim 1 , wherein the active layer further comprises a sacrificial layer stacked with the multiple oxide layers, the sacrificial layer is provided on a side of the multiple oxide layers facing away from the substrate, a wettability of the sacrificial layer to a photoresist is better than a wettability of a surface of the multiple oxide layers in direct contact with the sacrificial layer to the photoresist.
17. The thin film transistor of claim 16 , wherein the thin film transistor further comprises a source electrode and a drain electrode on the substrate, the source electrode and the drain electrode are provided on a side of the sacrificial layer facing away from the substrate, the sacrificial layer is disconnected at a position between the source electrode and the drain electrode, a thickness of the sacrificial layer is less than or equal to 100 angstroms, and the sacrificial layer is selected from the group consisting of a metal oxide semiconductor layer and a metal sulfide semiconductor layer.
18. An array substrate, comprising
a display region and a gate driving circuit region on a periphery of the display region, and a plurality of thin film transistors, each of the plurality of thin film transistors comprises:
a substrate and an active layer provided on the substrate, wherein
the active layer comprises multiple oxide layers arranged in a stack, the multiple oxide layers comprise a channel layer, a transition layer, and a first barrier layer, the channel layer is a layer with a highest carrier mobility in the multiple oxide layers, the channel layer is a crystalline oxide layer or an amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer in the multiple oxide layers, and the first barrier layer and the transition layer are both crystalline oxide layers;
a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are both greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are both larger than a band gap of the channel layer;
the transition layer is a first matching layer provided between the channel layer and the first barrier layer, a carrier concentration of the first matching layer is between a carrier concentration of the channel layer and a carrier concentration of the first barrier layer, a carrier mobility of the first matching layer is between a carrier mobility of the channel layer and a carrier mobility of the first barrier layer, and a thickness of the first matching layer and a thickness of the channel layer are both smaller than a thickness of the first barrier layer; and
the plurality of thin film transistors comprise a first thin film transistor in the display region and a second thin film transistor in the gate driving circuit region, a width-to-length ratio of the second thin film transistor is 12˜150 times a width-to-length ratio of the first thin film transistor.
19. The array substrate according to claim 18 , wherein the width-to-length ratio of the first thin film transistor is 0.5˜2, the width-to-length ratio of the second thin film transistor is 12.5˜118, a width of the second thin film transistor is 1˜500 times a width of the first thin film transistor, and a length of the second thin film transistor is 1.5 to 2 times a length of the first thin film transistor.
20. An array substrate, comprising a thin film transistor, wherein the thin film transistor comprises a substrate and an active layer provided on the substrate, wherein
the active layer comprises multiple oxide layers arranged in a stack, the multiple oxide layers comprise a channel layer, a transition layer, and a first barrier layer, the channel layer is a layer with a highest carrier mobility in the multiple oxide layers, the channel layer is a crystalline oxide layer or an amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer in the multiple oxide layers, and the first barrier layer and the transition layer are both crystalline oxide layers;
a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are both greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are both larger than a band gap of the channel layer;
the transition layer is a first matching layer provided between the channel layer and the first barrier layer,
a carrier concentration of the first matching layer is between a carrier concentration of the channel layer and a carrier concentration of the first barrier layer,
a carrier mobility of the first matching layer is between a carrier mobility of the channel layer and a carrier mobility of the first barrier layer, and
a thickness of the first matching layer and a thickness of the channel layer are both smaller than a thickness of the first barrier layer.