IP Library Patent Application 17784228
Patent Application
App. No. 17/784,228

CHEMICAL-MECHANICAL POLISHING COMPOSITION AND CHEMICAL-MECHANICAL POLISHING METHOD USING THE SAME

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Patent No.
US None
App. No.
17/784,228
Abstract

The chemical-mechanical polishing composition of the present invention is for polishing a substrate and contains an abrasive, a hydroxyethyl cellulose having a weight average molecular weight of 200,000 or less, a basic component, a surfactant, and an aqueous carrier.

Claims (30)

1 . A chemical-mechanical polishing composition for polishing a substrate, comprising:

an abrasive,

a hydroxyethyl cellulose having a weight average molecular weight of 200,000 or less,

a basic component,

a surfactant, and

an aqueous carrier.

2 . The chemical-mechanical polishing composition of claim 1 , wherein the hydroxyethyl cellulose has a weight average molecular weight of 150,000 or less.

3 . The chemical-mechanical polishing composition of claim 1 , wherein the abrasive has a primary particle size of 50 nm or less.

4 . The chemical-mechanical polishing composition of claim 1 , wherein the abrasive has a primary particle size of 20 to 40 nm.

5 . The chemical-mechanical polishing composition of claim 1 , wherein the surfactant comprises at least one of an alkylene polyalkylene oxide amine polymer and a polyoxyalkylene alkyl ether.

6 . The chemical-mechanical polishing composition of claim 5 , wherein the surfactant comprises both of the alkylene polyalkylene oxide amine polymer and the polyoxyalkylene alkyl ether.

7 . The chemical-mechanical polishing composition of claim 1 , wherein the surfactant comprises an alkylene polyalkylene oxide amine polymer, and the alkylene polyalkylene oxide amine polymer contains at least two repeating structural units containing a tertiary amine having an alkylene group and a polyalkyleneoxide group bound to an N atom.

8 . The chemical-mechanical polishing composition of claim 1 , wherein the surfactant comprises a polyoxyalkylene alkyl ether, and the polyoxyalkylene alkyl ether is represented by the formula (i) RO-(AO) n —H, wherein R is a linear or branched C 1 to C 15 alkyl group, A is an alkylene group selected from the group consisting of an ethylene group, a propylene group, and a combination thereof, n represents average addition mol numbers of AO and is 2 to 30.

9 . The chemical-mechanical polishing composition of claim 1 , further comprising:

a water-soluble polymer comprising a polymer containing a polyvinyl alcohol structural unit.

10 . The chemical-mechanical polishing composition of claim 9 , wherein the polymer containing a polyvinyl alcohol structural unit is a polyvinyl alcohol-polyalkyleneoxide graft copolymer containing a polyvinyl alcohol structural unit in a main chain and a polyalkyleneoxide structural unit in a side chain, or a polyvinyl alcohol-polyalkyleneoxide graft copolymer containing a polyalkyleneoxide structural unit in a main chain and a polyvinyl alcohol structural unit in a side chain.

11 . The chemical-mechanical polishing composition of claim 1 , wherein the abrasive is selected from the group consisting of alumina, silica, ceria, zirconia and a combination thereof.

12 . The chemical-mechanical polishing composition of claim 1 , comprising:

a silica having a primary particle size of 20 to 40 nm,

a hydroxyethyl cellulose having a weight average molecular weight of 150,000 or less,

ammonia,

a surfactant comprising at least one of an alkylene polyalkylene oxide amine polymer and a polyoxyalkylene alkyl ether,

a water-soluble polymer comprising a polymer containing a polyvinyl alcohol structural unit, and

an aqueous carrier.

13 . The chemical-mechanical polishing composition of claim 1 , wherein the substrate is a silicon substrate.

14 . A method of chemically-mechanically polishing a substrate, comprising:

contacting a substrate with a polishing pad and the chemical-mechanical polishing composition of claim 1 ,

moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and

abrading at least a portion of the substrate to polish the substrate.

15 . The method of chemically-mechanically polishing a substrate of claim 14 , wherein the method comprises, before the contacting step, diluting the chemical-mechanical polishing composition and then filtering it with a filter having a pore diameter of 5 μm or less.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 4, 2023
From: ENTEGRIS JAPAN CO., LTD.
To: ENTEGRIS, INC.
Reel/Frame 065746/0789 →
MERGER Recorded Nov 28, 2023
From: CMC MATERIALS KK
To: ENTEGRIS JAPAN CO., LTD.
Reel/Frame 065686/0902 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 10, 2022
From: KITAMURA, HIROSHI; NAMIKI, AKIHISA; MASUDA, TSUYOSHI; MATSUMURA, YOSHIYUKI
To: CMC MATERIALS KK
Reel/Frame 060161/0948 →