Connection structure and manufacturing method therefor
A connection structure including: a first circuit member having a plurality of first electrodes; a second circuit member having a plurality of second electrodes; and an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, in which at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and 90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.
1. A connection structure comprising:
a first circuit member having a plurality of first electrodes;
a second circuit member having a plurality of second electrodes; and
an intermediate layer having a plurality of bonding portions electrically connecting the first electrodes and the second electrodes, wherein
at least one of the first electrode and the second electrode that are connected by the bonding portion is a gold electrode, and
90% or more of the plurality of bonding portions include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.
2. The connection structure according to claim 1 , wherein the intermediate layer further has an insulating resin layer sealing a space between the first circuit member and the second circuit member.
3. A method for manufacturing a connection structure, the method comprising:
a preparing step of preparing a first circuit member having a plurality of first electrodes, a second circuit member having a plurality of second electrodes, and an anisotropically conductive film;
a disposing step of disposing the first circuit member, the second circuit member, and the anisotropically conductive film such that a surface of the first circuit member on which the first electrodes are provided and a surface of the second circuit member on which the second electrodes are provided to face each other with the anisotropically conductive film interposed therebetween, to obtain a laminate in which the first circuit member, the anisotropically conductive film, and the second circuit member are laminated in this order; and
a connecting step of electrically connecting the first electrodes and the second electrodes via the bonding portions by heating the laminate in a state of being pressed in a thickness direction, wherein
at least one of the first electrode and the second electrode is a gold electrode,
the anisotropically conductive film includes an insulating film constituted by an insulating resin composition and a plurality of solder particles disposed in the insulating film,
the solder particle contains a tin-bismuth alloy, and the average particle diameter of the solder particle is 1 μm to 30 μm, and the C.V. value of the solder particle is 20% or less,
in a longitudinal section of the anisotropically conductive film, the solder particle is disposed to be arranged in a transverse direction in a state of being spaced apart from the solder particle adjacent thereto, and
90% or more of the plurality of bonding portions to be formed in the connecting step include a first region containing a tin-gold alloy and connecting the first electrode and the second electrode and a second region containing bismuth and being in contact with the first region.
4. The method according to claim 3 , wherein the solder particle is a solder particle manufactured by a method including:
a solder fine particle preparing step of preparing a base substrate having a plurality of recesses and solder fine particles containing a tin-bismuth alloy;
an accommodating step of accommodating at least some of the solder fine particles in the recess; and
a fusing step of fusing the solder fine particles accommodated in the recess to form a solder particle inside the recess.
5. The method according to claim 4 , wherein the C.V. value of the solder fine particle to be prepared in the solder fine particle preparing step exceeds 20.
6. The method according to claim 3 , wherein the anisotropically conductive film is an anisotropically conductive film manufactured by a method including:
a transferring step of bringing an insulating resin composition into contact with an opening side of a recess of a base substrate having a plurality of recesses in which the solder particles are accommodated in the recesses, to obtain a first resin layer to which the solder particles are transferred; and
a laminating step of forming a second resin layer constituted by an insulating resin composition on a surface of the first resin layer on a side to which the solder particles are transferred, to obtain an anisotropically conductive film.