Display device and method for manufacturing same
A display device includes pixel areas each having an emission area, and a pixel in each of the pixel areas and including a display element part. The display element part includes a first insulating layer on a substrate, a light emitting element on the first insulating layer and each having first and second ends, a first layer on the first insulating layer and the light emitting element and contacting a first area of each of the first and second ends of the light emitting element, a second layer on the light emitting element and contacting a second area of each of the first and second ends of the light emitting element, and an interlayer insulating layer between the first layer and the second layer. The first layer and the second layer include a semiconductor material.
1. A display device comprising:
a display area and a non-display area adjacent to at least a side of the display are the display area including pixel areas, each of the pixel areas having an emission area and;
a pixel disposed in each of the pixel areas and including a display element part,
wherein the display element part comprises:
a first insulating layer disposed on a substrate;
at least one light emitting element disposed on the first insulating layer and each having a first end and a second end in a longitudinal direction;
a first layer disposed on the first insulating layer and the at least one light emitting element and a first area of each of the first end and the second end of the at least one light emitting element;
a second layer disposed on the at least one light emitting element and contacting a second area of each of the first end and the second end of the at least one light emitting element; and
an interlayer insulating layer disposed between the first layer and the second layer, and
the first layer and the second layer include a semiconductor material.
2. The display device according to claim 1 , wherein the at least one light emitting element comprises:
a first semiconductor layer of a first conductive dopant;
a second semiconductor layer of a second conductive dopant; and
an active layer disposed between the first semiconductor layer and the second semiconductor layer, and
the first semiconductor layer and the second semiconductor layer each include a gallium nitride (GaN) semiconductor material.
3. The display device according to claim 2 , wherein
the first conductive dopant includes an n-type dopant, and
the second conductive dopant includes a p-type dopant.
4. The display device according to claim 3 , wherein
the first end of the at least one light emitting element includes the first semiconductor layer, and
the second end of the at least one light emitting element includes the second semiconductor layer.
5. The display device according to claim 4 , wherein
the first layer of the display element part includes a p-type hydrogenated amorphous silicon (a-Si:H) semiconductor material, and
the second layer of the display element part includes a transparent oxide semiconductor material.
6. The display device according to claim 5 , further comprising:
a first power line disposed between the substrate and the first insulating layer and electrically connected to the first layer of the display element part; and
a second power line disposed between the substrate and the first insulating layer, spaced apart from the first power line, and electrically connected to the second layer of the display element part.
7. The display device according to claim 6 , wherein
the first layer of the display element part is a hole injection layer receiving a first power from the first power line and injecting a hole into the first area of the second end of the at least one light emitting element, and
the second layer is an electron injection layer receiving a second power from the second power line and injecting an electron into the second area of the first end of the at least one light emitting element.
8. The display device according to claim 7 , wherein the interlayer insulating layer is disposed between the first area and the second area of each of the first end and the second end of the at least one light emitting element.
9. The display device according to claim 8 , wherein the first area of the first end of the at least one light emitting element contacting the first layer and the second area of the first end of the at least one light emitting element contacting the second layer have the same width.
10. The display device according to claim 8 , wherein the second area of the first end of the at least one light emitting element contacting the second layer and the second area of the second end of the at least one light emitting element contacting the second layer have a same width.
11. The display device according to claim 7 , wherein the display element part further comprises:
a first conductive line disposed between the substrate and the first insulating layer;
a second insulating layer disposed on the second layer; and
a second conductive line disposed on the second insulating layer.
12. The display device according to claim 11 , wherein different voltages are applied to the first conductive line and the second conductive line, respectively, and an electric field is formed in a direction intersecting the longitudinal direction of the at least one light emitting element.
13. The display device according to claim 12 , wherein the second conductive line includes a transparent conductive material.
14. The display device according to claim 11 , wherein the display element part further comprises a cover layer disposed on the second conductive line corresponding to the at least one light emitting element.
15. The display device according to claim 14 , wherein the cover layer includes an opaque conductive material.
16. The display device according to claim 14 , wherein the cover layer guides light emitted from the at least one light emitting element in a direction to determine a position of the emission area of each of the pixel areas.
17. The display device according to claim 1 , wherein the pixel further comprises a pixel circuit part disposed between the substrate and the display element part.
18. A display device comprising:
a stretchable substrate including islands and bridges connecting the islands; and
pixels disposed in each of the islands and each including a display element part, wherein
the display element part comprises:
a first insulating layer disposed in each of the islands;
light emitting elements disposed on the first insulating layer and each having a first end and a second end in a longitudinal direction;
a first layer disposed on the first insulating layer and the light emitting elements and a first area of each of the first end and the second end of each of the light emitting elements;
a second layer disposed on the light emitting elements and contacting a second area of each of the first end and the second end of each of the light emitting elements; and
an interlayer insulating layer disposed between the first layer and the second layer,
the first layer and the second layer include a semiconductor material.
19. The display device according to claim 18 , wherein
the first layer includes a p-type hydrogenated amorphous silicon (a-Si:H) semiconductor material, and
the second layer includes a transparent oxide semiconductor material.
20. The display device according to claim 19 , wherein
the first end of each of the light emitting elements includes a first semiconductor layer of an n-type dopant, and
the second end of each of the light emitting elements includes a second semiconductor layer of a p-type dopant.
21. The display device according to claim 18 , wherein the stretchable substrate further includes a cutout disposed between the islands and the bridges.
22. A method of manufacturing a display device, the method comprising:
providing a pixel in a pixel area of device, wherein
the providing of the pixel comprises:
forming a pixel circuit part on a substrate; and
forming a display element part on the pixel circuit part, and
the forming of the display element part comprises:
forming a first insulating layer on the pixel circuit part;
supplying light emitting elements each having a first end and a second end in a longitudinal direction on the first insulating layer;
forming a first layer including a p-type hydrogenated amorphous silicon (a-Si:H) semiconductor material on the light emitting elements;
forming an interlayer insulating layer on the first layer;
forming a second layer including a transparent oxide semiconductor material on the interlayer insulating layer; and
forming a second insulating layer on the second layer.
23. The method according to claim 22 , wherein
the first layer contacts each of a first area of the first end and a second area of the second end of the light emitting elements,
the second layer contacts each of a second area of the first end and a second area of the second end of the light emitting elements, and
the interlayer insulating layer contacts and is disposed between the first area and the second area of each of the first end and the second end of the light emitting elements.
24. The method according to claim 23 , wherein the forming of the display element part comprises:
forming a first conductive line between the pixel circuit part and the first insulating layer;
forming a second conductive line on the second insulating layer; and
forming a cover layer on the second conductive line.