Mechatronic spatial atomic layer deposition system with closed-loop feedback control of parallelism and component alignment
A spatial atomic layer deposition apparatus that includes a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas, a substrate plate that opposes the depositor head and has a support surface for retaining a build substrate, a plurality of gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate, and a controller that communicates with the plurality of gap detection sensors. The gap detection sensors permit a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate to be determined in real-time and monitored.
1 . A spatial atomic layer deposition apparatus comprising:
a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas;
a substrate plate that opposes the depositor head, the substrate plate having a support surface that retains a build substrate, the support surface of the substrate plate being spaced apart from the active surface of the depositor head by a gap;
a linear motion stage that reciprocally moves the substrate plate relative to the depositor head;
a plurality of gap detection sensors supported on either the depositor head or the substrate plate, each of the gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate; and
a controller that communicates with the gap detection sensors and receives the output signal from each of the gap detection sensors,
wherein the controller is configured to determine a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate based on the output signals received from the gap detection sensors.
2 . The spatial atomic layer deposition apparatus set forth in claim 1 , further comprising:
a plurality of linear actuators supporting the substrate plate, the plurality of linear actuators being configured to move the substrate plate to adjust the spatial orientation of the active surface of the depositor head and the support surface of the substrate plate.
3 . The spatial atomic layer deposition apparatus set forth in claim 2 , wherein each of the plurality of linear actuators comprises a motor and an actuation rod connected to and driven by the motor, the motor of each of the plurality of linear actuators being configured to drive linear displacement of its associated actuation rod.
4 . The spatial atomic layer deposition apparatus set forth in claim 3 , wherein the controller communicates with the motor of each of the plurality of linear actuators and is configured to send a positioning signal to each of the plurality of linear actuators that commands the motor of the linear actuator to linearly displace its associated actuation rod.
5 . The spatial atomic layer deposition apparatus set forth in claim 4 , wherein the controller is configured to send the positioning signal to each of the plurality of motors to instruct the motor to actuate its corresponding actuation rod a defined distance to move the substrate plate and adjust the spatial orientation of the active surface of the depositor head and the support surface of the substrate plate.
6 . The spatial atomic layer deposition apparatus set forth in claim 1 , wherein the spatial atomic layer deposition apparatus further comprises a bridge supported in an elevated position above the substrate plate and having an elongated body that is tiltable about both a longitudinal axis and a lateral axis of the body, and wherein the spatial atomic layer deposition apparatus further comprises an ALD precursor gas distributor that is carried on the elongated bridge, the ALD precursor gas distributor comprising the depositor head and a gas manifold that supplies the depositor head with the flow of a first precursor gas, the flow of a second precursor gas, and the flow of an inert gas.
7 . The spatial atomic layer deposition apparatus set forth in claim 1 , wherein the spatial orientation comprises parallelism of the substrate plate relative to the depositor head.
8 . The spatial atomic layer deposition apparatus set forth in claim 1 , wherein each of the gap detection sensors is a capacitive sensor.
9 . The spatial atomic layer deposition apparatus set forth in claim 1 , further comprising:
a bridge supported in an elevated position and having an elongated body that is tiltable about both a longitudinal axis and a lateral axis of the body;
an ALD precursor gas distributor carried by the elongated body, the ALD precursor gas distributor comprising the depositor head; and
a plurality of linear actuators that engage a back surface of the substrate plate opposite the support surface,
wherein the controller that receives the output signal from each of the gap detection sensors sends a positioning signal to each of the plurality of linear actuators, the controller being configured to adjust the size or the uniformity of the gap between the support surface of the substrate plate and the active surface of the depositor head by actuating, via the positioning signals, one or more of the plurality of linear actuators.
10 . The spatial atomic layer deposition apparatus set forth in claim 9 , wherein each of the plurality of linear actuators comprises a motor and an actuation rod connected to and driven by the motor, the motor of each of the plurality of linear actuators being configured to drive linear displacement of its associated actuation rod.
11 . The spatial atomic layer deposition apparatus set forth in claim 10 , wherein the controller is configured to send the positioning signal to each of the plurality of linear actuators to command the motor of the linear actuator to linearly displace its associated actuation rod a defined distance to move the substrate plate and adjust the size or the uniformity of the gap between the support surface of the substrate plate and the active surface of the depositor head.
12 . The spatial atomic layer deposition apparatus set forth in claim 9 , wherein each of the plurality of gap detection sensors is a capacitive sensor.
13 . The spatial atomic layer deposition apparatus set forth in claim 9 , wherein the spatial orientation comprises parallelism of the substrate plate relative to the depositor head.
14 . The spatial atomic layer deposition apparatus set forth in claim 1 , wherein the apparatus is configured to be operated to grow a film of atomic layer deposition material onto a growth portion of the build substrate while monitoring and adjusting the parallelism of the active surface of the depositor head and the support surface of the substrate plate.
15 . A spatial atomic layer deposition apparatus comprising:
a depositor head having an active surface configured to discharge a flow of a first precursor gas, a flow of a second precursor gas, and a flow of an inert gas that separates the flow of the first precursor gas and the flow of the second precursor gas;
a substrate plate that opposes the depositor head, the substrate plate having a support surface that retains a build substrate, the support surface of the substrate plate being spaced apart from the active surface of the depositor head by a gap;
a linear motion stage that reciprocally moves the substrate plate relative to the depositor head; and
a plurality of gap detection sensors supported on either the depositor head or the substrate plate, each of the gap detection sensors producing an output signal indicative of a distance between the active surface of the depositor head and the support surface of the substrate plate,
wherein the apparatus is configured to be operated to grow a film of atomic layer deposition material onto a growth portion of the build substrate while monitoring and adjusting a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate.
16 . The spatial atomic layer deposition apparatus set forth in claim 15 , further comprising a controller that communicates with the plurality of gap detection sensors and receives the output signal from each of the plurality of gap detection sensors, wherein the controller is configured to determine the spatial orientation of the active surface of the depositor head and the support surface of the substrate plate in real-time while the apparatus is being operated to grow the film.
17 . The spatial atomic layer deposition apparatus set forth in claim 16 , wherein the controller is configured to send a positioning signal to each of a plurality of actuators to tilt at least one of the depositor head or the substrate plate to adjust the spatial orientation of the active surface of the depositor head and the support surface of the substrate plate in real-time while the apparatus is being operated to grow the film.
18 . The spatial atomic layer deposition apparatus set forth in claim 15 , wherein the apparatus is configured to monitor and adjust parallelism of the active surface of the depositor head and the support surface of the substrate plate in real-time while the apparatus is being operated to grow the film.
19 . A method of operating the spatial atomic layer deposition apparatus set forth in claim 1 , the method comprising:
supplying the first precursor gas, the second precursor gas, and the inert gas to the depositor head;
discharging at least one linear flow of the first precursor gas, at least one linear flow of the second precursor gas, and at least one linear flow of the inert gas from the active surface of the depositor head, the at least one linear flow of the inert gas separating the at least one linear flow of the first precursor gas and the at least one linear flow of the second precursor gas;
moving the substrate plate to deposit one or more atomic layers of an ALD material film, each atomic layer of the ALD material film being deposited by sequentially exposing the build substrate to the linear flow of the first precursor gas and the linear flow of the second precursor gas as a result of relative movement between the substrate plate and the depositor head, wherein the first and the second precursor gases react to form the atomic layers of the ALD material film; and
during the step of moving, measuring a spatial orientation of the active surface of the depositor head and the support surface of the substrate plate using the gap detection sensors.