Granted Patent B2

US 12,538,637 · App. 17/802,564 · Granted Jan 27, 2026

Inventors: Dong Li (Beijing, CN); Boris Kristal (Beijing, CN)

Assignees: BEIJING BOE TECHNOLOGY DEVELOPMENT CO., LTD.; BOE TECHNOLOGY GROUP CO., LTD.

H10K50/115H10K50/16H10K59/122H10K50/813

Abstract

Claims (47)

1 . A light-emitting diode device, comprising:

a base substrate;

a first electrode layer laminated on the base substrate;

an electron transport layer laminated on a surface of the first electrode layer away from the base substrate;

a quantum dot light-emitting layer laminated on a surface of the electron transport layer away from the first electrode layer; and

a second electrode layer laminated on a surface of the quantum dot light-emitting layer away from the electron transport layer;

wherein the surface of the electron transport layer away from the first electrode layer is a first concave-convex surface including a plurality of protrusions,

wherein the surface of the first electrode layer away from the base substrate is a second concave-convex surface including a plurality of protrusions, and

wherein the first electrode layer comprises a first electrode sub-layer and conductive nanoparticles disposed on the first electrode sub-layer, and the conductive nanoparticles constitute the plurality of protrusions of the second concave-convex surface.

2 . The light-emitting diode device according to claim 1 , wherein a root-mean-square surface roughness of the first concave-convex surface ranges from 5 nm to 10 nm.

3 . The light-emitting diode device according to claim 2 , wherein a height of the plurality of protrusions included in the first concave-convex surface in a direction perpendicular to the base substrate ranges from 1 nm to 10 nm.

4 . The light-emitting diode device according to claim 1 , wherein the plurality of protrusions included in the second concave-convex surface have the same shape as the plurality of protrusions included in the first concave-convex surface, and the plurality of protrusions included in the second concave-convex surface have the same height as the plurality of protrusions included in the first concave-convex surface in a direction perpendicular to the base substrate.

5 . The light-emitting diode device according to claim 1 , wherein the electron transport layer comprises a doped zinc oxide film doped with magnesium ions and trivalent metal ions.

6 . The light-emitting diode device according to claim 5 , wherein the trivalent metal ions are aluminum ions,

in the doped zinc oxide film, a mass percentage of doped magnesium ions is 0.5%-20%, and a mass percentage of doped aluminum ions is 0.5%-10%.

7 . The light-emitting diode device according to claim 1 , wherein the electron transport layer comprises N+1 electron transport sub-layers and N electron blocking sub-layers,

the N electron blocking sub-layers are sandwiched between the N+1 electron transport sub-layers, and N is a positive integer greater than or equal to 2, and

among the N+1 electron transport sub-layers, a surface of the electron transport sub-layer farthest from the base substrate that is away from the base substrate is the first concave-convex surface, and materials of the N+1 electron transport sub-layers are the same, and materials of the N electron blocking sub-layers are different from the materials of the N+1 electron transport sub-layers.

8 . A display panel, comprising:

a base substrate; and

a plurality of sub-pixels arranged in an array on the base substrate, wherein each of the plurality of sub-pixels comprises the light-emitting diode device according to claim 1 ,

the display panel further comprises a pixel defining layer,

wherein the pixel defining layer is arranged on the surface of the electron transport layer away from the base substrate and comprises a plurality of openings, wherein the pixel defining layer at least partially covers an edge of the electron transport layer, the plurality of openings respectively expose a middle part of the electron transport layer, and the quantum dot light-emitting layer is arranged at least in the plurality of openings.

9 . A manufacturing method of a light-emitting diode device, comprising:

providing a base substrate;

forming a first electrode layer on the base substrate;

forming an electron transport layer on a surface of the first electrode layer away from the base substrate;

forming a quantum dot light-emitting layer on a surface of the electron transport layer away from the first electrode layer; and

forming a second electrode layer on a surface of the quantum dot light-emitting layer away from the electron transport layer,

wherein forming the electron transport layer comprises: forming the surface of the electron transport layer away from the first electrode layer into a first concave-convex surface including a plurality of protrusions,

wherein forming the surface of the electron transport layer away from the first electrode layer into the first concave-convex surface including the plurality of protrusions comprises:

forming the first electrode layer including a first electrode sub-layer and a second electrode sub-layer laminated in sequence on the base substrate, and forming a surface of the second electrode sub-layer away from the base substrate into a second concave-convex surface including a plurality of protrusions; and

forming the electron transport layer on the second concave-convex surface by using a sputtering process or a spin-coating process, so that the surface of the electron transport layer away from the first electrode layer is formed into the first concave-convex surface including the plurality of protrusions, and

wherein forming the surface of the second electrode sub-layer away from the base substrate into the second concave-convex surface including a plurality of protrusions comprises:

forming nanoparticles on the surface of the first electrode sub-layer away from the base substrate;

forming the second electrode sub-layer with a thickness smaller than that of the nanoparticles on the surface of the first electrode sub-layer away from the base substrate; and

removing the nanoparticles by etching the second electrode sub-layer to form the second concave-convex surface including a plurality of protrusions.

10 . The manufacturing method according to claim 9 ,

wherein the thickness of the second electrode sub-layer is 5 nm-10 nm.

11 . The manufacturing method according to claim 9 , wherein forming a surface of the second electrode sub-layer away from the base substrate into a second concave-convex surface including a plurality of protrusions comprises:

forming a conductive film on the surface of the first electrode sub-layer away from the base substrate by adopting an evaporation process, wherein a thickness of the conductive film is 1 nm-5 nm so that the conductive film exposes a part of the first electrode sub-layer, thereby forming the second concave-convex surface including a plurality of protrusions.

12 . The manufacturing method according to claim 9 , wherein forming a surface of the second electrode sub-layer away from the base substrate into a second concave-convex surface including a plurality of protrusions comprises:

forming conductive nanoparticles on the surface of the first electrode sub-layer away from the base substrate to form the second concave-convex surface including a plurality of protrusions, wherein a thickness of the conductive nanoparticle is 1 nm-10 nm.

13 . The manufacturing method according to claim 9 , wherein forming the electron transport layer on the second concave-convex surface by using a sputtering process or a spin-coating process comprises:

forming a doped zinc oxide film doped with magnesium ions and trivalent metal ions on the second concave-convex surface by a sputtering process as the electron transport layer.

14 . The manufacturing method according to claim 13 , wherein the trivalent metal ions are aluminum ions, and mass percentages of doped magnesium ions and doped aluminum ions in the doped zinc oxide film are 0.5%-20% and 0.5%-10%, respectively, and

the doped zinc oxide film is formed by one selected from the group consisted of ZnMgAlO sputtering, co-sputtering of ZnMgO and Al2O3, and co-sputtering of ZnAlO and MgO.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (19)