Organic light emitting diode and organic light emitting diode display device including the same
An organic light emitting element includes a first electrode a second electrode that faces the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including quantum dots, and a hole transport layer between the first electrode and the emission layer. The quantum dots include at least one of a Group I-VI compound, a Group II-VI compound, and a Group III-VI compound. The hole transport layer includes at least one of a p-doped Group I-VI compound, a p-doped Group II-VI compound, and a p-doped Group III-VI compound.
1. A light emitting element, comprising:
a first electrode;
a second electrode that faces the first electrode;
an emission layer between the first electrode and the second electrode, the emission layer including quantum dots having a core/shell structure, wherein the core of the quantum dots of the emission layer includes at least one compound selected from Cu 2 S and Ag 2 S, and the shell of the quantum dots of the emission layer include at least one compound selected from a Group I-VI compound, a Group II-VI compound, and a Group III-VI compound; and
a hole transport layer between the first electrode and the emission layer, the hole transport layer including quantum dots, wherein the quantum dots of the hole transport layer include at least one compound selected from a p-doped Group I-VI compound, a p-doped Group II-VI compound, and a p-doped Group III-VI compound.
2. The light emitting element as claimed in claim 1 , wherein:
the quantum dots of the hole transport layer each include at least one compound selected from p-ZnTe and p-ZnSe.
3. The light emitting element as claimed in claim 1 , wherein:
the shell of the quantum dots of the emission layer includes at least one of ZnSe or ZnS.
4. The light emitting element as claimed in claim 1 , further comprising an electron transport layer between the emission layer and the second electrode.
5. The light emitting element as claimed in claim 4 , wherein the electron transport layer includes at least one selected from an n-doped Group I-VI compound, an n-doped Group II-VI compound, and an n-doped Group III-VI compound.
6. The light emitting element as claimed in claim 5 , wherein the electron transport layer includes at least one selected from n-In 2 S 3 , n-Cu 2 S, n-Ag 2 S, n-ZnO, n-ZnTe, n-ZnSe, and n-ZnS.
7. A light emitting diode display, comprising: a substrate;
a thin film transistor on the substrate;
a first electrode connected with the thin film transistor;
a hole transport layer on the first, electrode, the hole transport layer including quantum dots;
an emission layer on the hole transport layer, the emission layer including quantum dots having a core/shell structure; and
a second electrode on the emission layer,
wherein the core of the quantum dots of the emission layer includes at least one selected from Cu 2 S and Ag 2 S, and the shell of the quantum dots of the emission layer includes at least one selected from a Group I-VI compound, a Group II-VI compound, and a Group III-VI compound, and
the quantum dots of the hole transport layer include at least one compound selected from a p-doped Group I-VI compound, a p-doped Group II-VI compound, and a p-doped Group III-VI compound.
8. The light emitting diode display as claimed in claim 7 , wherein:
the shell of the quantum dots of the emission layer includes at least one selected from In 2 S 3 , Cu 2 S, Ag 2 S, ZnO, ZnTe, ZnSe, and ZnS, and
the quantum dots of the hole transport layer include at least one selected from p-In 2 S 3 , p-Cu 2 S, p-Ag 2 S, p-ZnO, p-ZnTe, p-ZnSe, and p-ZnS.
9. The light emitting diode display as claimed in claim 8 , wherein:
the shell of the quantum dots of the emission layer includes at least one of ZnSe or ZnS, and
the quantum dots of the hole transport layer include at least-one of p-ZnSe, p-ZnS, or p-ZnTe.