Structures and methods for source-down vertical semiconductor device
A semiconductor device includes a region of semiconductor material having a first side and a second side opposite to the first side. Active device structures are adjacent to the first side, the active device structures comprising source regions and gate electrodes. A first gate conductor is at the first side electrically connected to the gate electrodes, a drain region is at the second side, a second gate conductor is at the second side, and through-semiconductor vias extending from the first side towards the side and electrically connecting the first gate electrode to the second gate electrode. A source electrode is at the first side electrically connected to the source regions, and a drain electrode is at the second side electrically connected to the drain region. The through-semiconductor vias are electrically isolated from the source regions and the drain region. The structure provides a gate/drain up with a source-down configuration.
1. A semiconductor device, comprising:
a region of semiconductor material having a first side and a second side opposite to the first side;
active device structures adjacent to the first side, the active device structures comprising a first current carrying region and a trench gate structure;
a first gate conductor at the first side coupled to the trench gate structure;
a second current carrying region at the second side;
a second gate conductor at the second side;
a conductive structure within the region of semiconductor material electrically coupling the first gate conductor to the second gate conductor;
a first electrode electrically coupled to the first current carrying region; and
a second electrode electrically coupled to the second current carrying region at the second side.
2. The semiconductor device of claim 1 , wherein:
the conductive structure comprises through-semiconductor vias extending from the first side towards the second side.
3. The semiconductor device of claim 2 , further comprising:
an isolation structure within the region of semiconductor material electrically isolating the conductive structure from the first current carrying region and the second current carrying region.
4. The semiconductor device of claim 1 , wherein:
the conductive structure comprises a recessed region and conductive fill material within the recessed region.
5. The semiconductor device of claim 4 , wherein:
the conductive fill material directly contacts the first gate conductor.
6. The semiconductor device of claim 1 , further comprising:
a dielectric electrically isolating the first gate conductor from the first electrode.
7. The semiconductor device of claim 1 , wherein:
the trench gate structure comprises:
a trench extending from the first side into the region of semiconductor material;
a gate dielectric within the trench; and
a gate electrode; and
the gate dielectric electrically isolates the gate electrode from the region of semiconductor material.
8. The semiconductor device of claim 7 , wherein:
the trench structure further comprises:
a dielectric fill structure within the trench; and
a shield electrode; and
the dielectric fill structure electrically isolates the shield electrode from the region of semiconductor material and the gate electrode.
9. The semiconductor device of claim 1 , wherein:
the conductive structure partially extends through the region of semiconductor material so that a part of the region of semiconductor material proximate to the second side is interposed between the conductive structure and the second gate conductor.
10. The semiconductor device of claim 1 , wherein:
the conductive structure extends completely through the region of semiconductor material; and
the conductive structure directly contacts the second gate conductor.
11. The semiconductor device of claim 1 , wherein:
the conductive structure comprises a dielectric ring surrounding a conductive fill material.