IP Library › Granted Patent US 11,923,040
Granted Patent B2
US 11,923,040 · App. 17/805,278 · Granted Mar 5, 2024

Apparatuses and methods including multilevel command and address signals

Inventor: Kang-Yong Kim (Boise, ID)
G11C7/1084G11C7/106G11C7/1057G11C7/1087G11C8/10G11C8/18
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,923,040
App. No.
17/805,278
Granted
Mar 5, 2024
Kind
B2
Abstract

Multilevel command and address (CA) signals are used to provide commands and memory addresses from a controller to a memory system. Using multilevel signals CA signals may allow for using fewer signals compared to binary signals to represent a same number of commands and/or address space, or using a same number of multilevel CA signals to represent a larger number of commands and/or address space. A number of external command/address terminals may be reduced without reducing a set of commands and/or address space. Alternatively, a number of external terminals may be maintained, but provide for an expanded set of commands and/or address space.

Claims (42)

1. An apparatus, comprising:

a memory configured to receive a plurality of multilevel command and address signals that represent a command structure including a command operand and memory addresses, the multilevel command and address signals having respective voltages corresponding to a non-binary value, wherein the memory includes:

a means for providing internal command signals representing the command operand based on the multilevel command and address signals, wherein the means for providing internal command signals comprises a latching means that provides bits of the command operand based on two of the multilevel command and address signals;

a means for providing internal address signals representing the memory addresses, the memory addresses including a plurality of bits represented by the internal address signals wherein the means for providing internal address signals comprises a decoding means that provides bits of the memory addresses based on two of the multilevel command and address signals; and

a means for performing memory operations based on the internal command signals on memory locations based on the internal address signals.

2. The apparatus of claim 1 , further comprising

a controller configured to provide the plurality of multilevel command and address signals to the memory; and

a means of coupling the controller and the memory.

3. The apparatus of claim 1 , the memory further comprising a means of decoding the multilevel command and address signals into binary values.

4. The apparatus of claim 1 , the memory further comprising a means of comparing the voltages to a first reference voltage.

5. The apparatus of claim 4 , the memory further comprising a means of comparing the voltages to a second reference voltage.

6. The apparatus of claim 1 , wherein each multilevel command and address signal has a respective voltage corresponding to one of three or more different values.

7. The apparatus of claim 1 , wherein each multilevel command and address signal has a voltage corresponding to a 0, 1, or 2.

8. The apparatus of claim 1 , the memory further comprising a means of latching signals corresponding to the command operand.

9. A method comprising:

receiving, at a memory, a plurality of multilevel command and address signals that represent a command structure including a command operand and memory addresses, the multilevel command and address signals having respective voltages corresponding to a non-binary value;

converting the multilevel command and address signals to binary signals;

latching the binary signals;

providing internal command signals representing the command operand based on the binary signals latched;

decoding the binary signals;

providing internal address signals representing the memory addresses, the memory addresses including a plurality of bits based on the binary signals decoded; and

performing memory operations based on the internal command signals on memory locations based on the internal address signals.

10. The method of claim 9 , further comprising receiving a clock signal at the memory, wherein a portion of the plurality of multilevel command and address signals are received on a rising edge of the clock signal and another portion of the plurality of multilevel command and address signals are received on a falling edge of the clock signal.

11. The method of claim 9 , further comprising receiving a select signal at the memory.

12. The method of claim 9 , further comprising decoding the multilevel command and address signals into binary values.

13. The method of claim 9 , further comprising comparing the voltages to at least one reference voltage.

14. The method of claim 9 , wherein each multilevel command and address signal has a respective voltage corresponding to one of three or more different values.

15. The method of claim 9 , wherein the command structure further comprises a multipurpose output.

16. The method of claim 9 , wherein the memory operations include an activation operation, a precharge operation, a write operation, a read operation, a mask write operation, or a combination thereof.

17. A system comprising:

a plurality of memories, wherein each of the memories is configured to receive a plurality of multilevel command and address signals that represent a command structure including a command operand and memory addresses, the multilevel command and address signals having respective voltages corresponding to a non-binary value, wherein each of the plurality of memories includes:

a means of decoding the multilevel command and address signals into binary values;

a means of latching the binary values;

a means for providing internal command signals representing the command operand based on the binary values latched;

a means of decoding the binary values;

a means for providing internal address signals representing the memory addresses, the memory addresses including a plurality of bits based on the binary values decoded; and

a means for performing memory operations based on the internal command signals on memory locations based on the internal address signals.

18. The system of claim 17 , further comprising:

a controller configured to provide the plurality of multilevel command and address signals to the plurality of memories; and

a means of coupling the controller and the plurality of memories.

19. The system of claim 18 , wherein the controller is further configured to provide a clock signal to the plurality of memories.

20. The system of claim 17 , each of the plurality of memories further comprising a means of decoding the multilevel command and address signals into binary values.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2022
From: KIM, KANG-YONG
To: MICRON TECHNOLOGY, INC.
Reel/Frame 060095/0468 →
Continuity (3)
Division 16875798 · May 15, 2020
Provisional Application 62854525 · May 30, 2019
Related Publication 20220293147A1 · Sep 15, 2022
Cited By (1)
US 12,462,853