Power planes and pass-through vias
The semiconductor device includes a first metal layer, a second metal layer, a metal plane, a third dielectric layer and a fourth dielectric layer. The first metal layer comprises a first dielectric layer with a first plurality of signal track and a first plurality of power rails. The second metal layer comprises a second dielectric layer with a second plurality of signal tracks and a second plurality of power rails. The metal plane is between the first metal layer and the second metal layer. The third dielectric layer is between the first metal layer and the metal plane. The fourth dielectric layer is between the second metal layer and the metal plane.
1 . A semiconductor device comprising:
a first metal layer, wherein the first metal layer comprises a first dielectric layer with a first plurality of signal tracks and a first plurality of power rails;
a second metal layer, wherein the second metal layer comprises a second dielectric layer with a second plurality of signal tracks and a second plurality of power rails;
a metal plane between the first metal layer and the second metal layer, wherein the metal plane comprises an alternating plurality of first metal planes and second metal planes, wherein the first metal plane comprises a first material and the second metal plane comprises of a second material, wherein the first material is different from the second material to allow for selective removal of either the first metal planes or the second metal planes;
a third dielectric layer between the first metal layer and the metal plane;
a fourth dielectric layer between the second metal layer and the metal plane; and
one or more first vias connecting a first power rail of the first plurality of power rails to a second power rail of the second plurality of power rails through the third dielectric layer, the fourth dielectric layer, and the alternating plurality of first metal planes and second metal planes, and
a plurality of dielectric spacers between the one or more first vias and the alternating plurality of first metal planes and second metal planes.
2 . The semiconductor device of claim 1 , further comprising:
one or more second vias connecting a first signal track of the first plurality of signal tracks to a second signal track of the second plurality of signal tracks through the third dielectric layer, the fourth dielectric layer, and the metal plane.
3 . The semiconductor device of claim 2 , further comprising a second plurality of dielectric spacers between the one or more second vias and the alternating plurality of first metal planes and second metal planes.
4 . The semiconductor device of claim 2 , wherein at least a portion of the third dielectric layer and a portion of the fourth dielectric layer are between the one or more second vias and the metal plane.
5 . The semiconductor device of claim 1 , wherein at least a portion of the third dielectric layer and a portion of the fourth dielectric layer are between the one or more first vias and the metal plane.
6 . The semiconductor device of claim 1 , further comprising a dielectric capping layer between the third dielectric layer and the first metal layer.
7 . A semiconductor device comprising:
a metal plane above a first metal level, wherein the metal plane comprises two or more metal layers;
a second metal level above the metal plane; and
a via connecting the first metal level to the second metal level through the metal plane, wherein a thickness of each metal layer of the two or more metal layers is smaller than a critical dimension of the via.
8 . The semiconductor device of claim 7 , wherein the first metal level and the second metal level include interconnect wiring.
9 . The semiconductor device of claim 7 , wherein there is an inner spacer between each metal layer of the two or more metal layers and the via.
10 . The semiconductor device of claim 7 , wherein there is a dielectric layer between the via and the metal plane.
11 . The semiconductor device of claim 7 , wherein the second metal level above the metal plane and the first metal level each include a plurality of signal tracks.
12 . The semiconductor device of claim 11 , wherein an area of the metal plane covers an area of each signal track of the plurality of signal tracks.