Methods of forming high aspect ratio features
View Patent ↗Methods of forming high aspect ratio openings. The method comprises removing a portion of a dielectric material at a temperature less than about 0° C. to form at least one opening in the dielectric material. The at least one opening comprises an aspect ratio of greater than about 30:1. A protective material is formed in the at least one opening and on sidewalls of the dielectric material at a temperature less than about 0° C. Methods of forming high aspect ratio features are also disclosed, as are semiconductor devices.
1. A method of forming high aspect ratio features, comprising:
forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C.;
forming an organic protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack, the organic protective material formed by molecular layer deposition; and
forming features in the high aspect ratio openings, at least some of the features comprising high aspect ratio pillars.
2. The method of claim 1 , wherein forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C. comprises forming the high aspect ratio openings at a temperature between about −60° C. and about −40° C.
3. The method of claim 1 , wherein forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C. comprises forming the high aspect ratio openings comprising an aspect ratio of greater than about 30:1.
4. The method of claim 1 , wherein forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C. and forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises exposing the stack of dielectric materials to an etch composition comprising an etch gas, at least one additive gas, and at least one organic protective material precursor.
5. The method of claim 4 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises reacting the at least one organic protective material precursor with the etch composition.
6. The method of claim 1 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises reacting at least one organic protective material precursor with the dielectric materials.
7. The method of claim 1 , wherein forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C. comprises exposing the stack of dielectric materials to an etch composition comprising an etch gas and at least one additive gas in the presence of a plasma.
8. The method of claim 1 , wherein forming high aspect ratio openings in a stack of dielectric materials at a temperature of less than about 0° C. comprises exposing the stack of dielectric materials to an anisotropic etch process.
9. The method of claim 1 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises exposing the stack of dielectric materials to at least one organic protective material precursor in the absence of a plasma.
10. The method of claim 1 , further comprising forming at least about eighty tiers of alternating dielectric materials to form the stack of dielectric materials, the stack of dielectric materials having first substantially vertical sidewalls, wherein forming features in the high aspect ratio openings comprises forming the high aspect ratio pillars within the stack of dielectric materials and having second substantially vertical sidewalls, the first substantially vertical sidewalk of the stack of dielectric materials adjacent to the second substantially vertical sidewalk of the high aspect ratio pillars.
11. A method of forming high aspect ratio features, comprising:
forming openings in a stack of dielectric materials at a temperature between about −100° C. and about −40° C. in the presence of a plasma, the openings exhibiting an aspect ratio of at least about 30:1;
forming an organic protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack in the absence of a plasma; and
forming features in the openings.
12. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material at a temperature between about −60° C. and about −40° C.
13. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material to a thickness of from about 1 nm to about 10 nm.
14. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material to a thickness of from about 1 nm to about 5 nm.
15. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material to a thickness of from about 5 nm to about 10 nm.
16. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material by molecular layer deposition.
17. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material comprising an insulative organic material.
18. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material comprising a conductive organic material.
19. The method of claim 11 , wherein forming an organic protective material at a temperature between about −100° C. and about −40° C. comprises forming the organic protective material without substantially etching the dielectric materials of the stack.
20. A method of forming high aspect ratio features, comprising:
forming openings in a stack of dielectric materials at a temperature of less than about 0° C., the openings exhibiting an aspect ratio of at least about 30:1;
forming a boron-containing protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack, the boron-containing protective material formed by thermal chemical vapor deposition (CVD), plasma-enhanced CVD, initiated CVD, photo-initiated CVD, atomic layer deposition (ALD), molecular layer deposition (MLD), or a combination thereof; and
forming features in the openings.
21. The method of claim 20 , wherein forming a boron-containing protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack comprises forming the boron-containing protective material from a protective material precursor comprising boron atoms, carbon atoms, and hydrogen atoms.
22. The method of claim 20 , wherein forming a boron-containing protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack comprises forming the boron-containing protective material comprising a boron nitride-based material or a boron oxide-based material.
23. The method of claim 20 , wherein forming a boron-containing protective material at a temperature between about −100° C. and about −40° C. on sidewalls of the stack comprises forming the boron-containing protective material in the presence of a plasma.
24. The method of claim 20 , further comprising removing the boron-containing protective material in the openings at a temperature of above about 5° C.