Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface including a flat region having a plurality of three-dimensionally designed surface structures on the flat region, a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures and a nitride-based semiconductor layer sequence on the nucleation layer, wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and wherein the oxygen content in the nucleation layer is greater than 10 19 cm −3 .
1. An electronic semiconductor chip comprising:
a growth substrate with a growth surface comprising a flat region having a plurality of three-dimensionally designed surface structures on the flat region;
a nucleation layer composed of oxygen-containing AlN in direct contact with the growth surface at the flat region and the three-dimensionally designed surface structures; and
a nitride-based semiconductor layer sequence on the nucleation layer,
wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and
wherein an oxygen content in the nucleation layer is greater than 10 19 cm −3 .
2. The electronic semiconductor chip according to claim 1 , wherein the nucleation layer is a sputtered layer.
3. The electronic semiconductor chip according to claim 1 , wherein the three-dimensionally designed surface structures are conical or pyramidal elevations on the flat region.
4. The electronic semiconductor chip according to claim 1 , wherein the growth substrate comprises aluminum oxide.
5. The electronic semiconductor chip according to claim 4 , wherein the flat region is a crystallographic c surface.
6. The electronic semiconductor chip according to claim 1 , wherein the growth substrate consists of aluminum oxide.
7. The electronic semiconductor chip according to claim 1 , wherein the semiconductor layer sequence comprises an optoelectronic active layer configured to emit or detect light.
8. The electronic semiconductor chip according to claim 1 , wherein the electronic semiconductor chip is a light-emitting or light-detecting diode.
9. The electronic semiconductor chip according to claim 1 , wherein the nucleation layer is formed by a plurality of posts arranged next to each other which are applied large-scale to the growth surface.
10. The electronic semiconductor chip according to claim 1 , wherein the semiconductor layer sequence is not grown onto the three-dimensionally designed surface structures.
11. A method for producing an electronic semiconductor chip, the method comprising:
providing a growth substrate with a growth surface comprising a flat region having a plurality of three-dimensionally designed surface structures on the flat region;
applying a nucleation layer composed of oxygen-containing AlN directly to the growth surface onto the flat region and the three-dimensionally designed surface structures, wherein an oxygen content in the nucleation layer is greater than 10 19 cm −3 ; and
growing a nitride-based semiconductor layer sequence on the nucleation layer,
wherein the semiconductor layer sequence overlays the three-dimensionally designed surface structures, and
wherein growing the semiconductor layer sequence begins selectively on the flat region.
12. The method according to claim 11 , wherein the nucleation layer is sputtered.
13. The method according to claim 11 , wherein the three-dimensionally designed surface structures comprise conical or pyramidal elevations on the flat region.
14. The method according to claim 11 , wherein the growth substrate comprises aluminum oxide.
15. The method according to claim 14 , wherein the flat region is a crystallographic c surface.
16. The method according to claim 11 , wherein the growth substrate consists of aluminum oxide.
17. The method according to claim 11 , wherein the semiconductor layer sequence comprises an optoelectronic active layer for emitting or detecting light.
18. The method according to claim 11 , wherein the nucleation layer is formed by a plurality of posts arranged next to each other which are applied large-scale to the growth surface.