IP Library Granted Patent US 11,749,338
Granted Patent B2
US 11,749,338 · App. 17/816,138 · Granted Sep 5, 2023

Memory device adjusting duty cycle and memory system having the same

Inventors: Dae-Sik Moon (Suwon-si, KR); Gil-Hoon Cha (Hwaseong-si, KR); Ki-Seok Oh (Seoul, KR); Chang-Kyo Lee (Seoul, KR); Yeon-Kyu Choi (Seoul, KR); Jung-Hwan Choi (Hwaseong-si, KR); Kyung-Soo Ha (Hwaseong-si, KR); Seok-Hun Hyun (Seongnam-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
G11C11/4076G06F3/0604G06F3/0653G06F3/0659G06F3/0673G11C7/222G11C11/409
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Quick Facts
Patent No.
US 11,749,338
App. No.
17/816,138
Granted
Sep 5, 2023
Kind
B2
Abstract

A memory device includes a clock receiver configured to receive, from a memory controller, a write clock that is used to receive write data during a data write operation, a duty monitor configured to generate first monitoring information by monitoring a duty of the write clock, and a duty adjuster configured to adjust the duty of the write clock in response to a duty control signal and output an adjusted write clock. The memory device provides the first monitoring information to the memory controller, and receives the duty control signal, generated using the first monitoring information, from the memory controller.

Claims (32)

1. A method for performing a duty adjustment operation, the method comprising:

performing a first duty adjustment operation on a write clock, the first duty adjustment operation including:

transmitting the write clock to an external device;

receiving a first duty monitoring information from the external device, the first duty monitoring information representing a result of monitoring duty cycle of the write clock; and

generating a first duty control signal based on the first duty monitoring information and transmitting the first duty control signal to the external source for adjusting the duty cycle of the write clock in the external device; and

performing a second duty adjustment operation on a read clock, the second duty adjustment operation including:

receiving a read clock generated based on the write clock and a second duty monitoring information from the external device, the second duty monitoring information representing a result of monitoring a duty cycle of the read clock; and

generating a second duty control signal based on the second duty monitoring information and transmitting the second duty control signal to the external source for adjusting the duty cycle of the read clock in the external device.

2. The method of claim 1 , wherein the first monitoring information indicates duty cycle error of the write clock and the second monitoring information indicates duty cycle error of the read clock respectively.

3. The method of claim 1 , wherein the first duty control signal is used for adjusting duty cycle error of the write clock and the second duty control signal is used for adjusting duty cycle error of the read clock respectively.

4. The method of claim 3 , further comprising controlling a period of duty monitoring operation of the external device based on the first and second duty monitoring information.

5. The method of claim 4 , wherein the controlling of the period of duty monitoring operation of the external device includes increasing the period of the duty monitoring operation when the first duty monitoring information indicates that the duty cycle error of the write clock is within a predetermined range.

6. The method of claim 4 , wherein the controlling of the period of duty monitoring operation of the external device includes temporarily disabling the duty monitoring operation when the first duty monitoring information indicates that the duty cycle error of the write clock is within a predetermined range.

7. The method of claim 1 , wherein the write clock toggles throughout the first and second duty adjustment operations.

8. The method of claim 1 , wherein the receiving of the first and second duty monitoring information is performed by a mode register set (MRS) read operation.

9. The method of claim 8 , wherein the MRS read operation includes a first MRS read operation for reading first mode register set corresponding to the first duty monitoring information and a second MRS read operation for reading a second mode register set corresponding to the second duty monitoring information.

10. The method of claim 9 , wherein at least one of a plurality of fields of the first mode register set indicates whether a logic high portion of an internal write clock generated from the write clock is wider than a logic low portion of the internal write clock.

11. A memory controller comprising:

a plurality of data transmitters configured to output write data to an external source;

a write clock transmitter configured to output a write clock to the external source in synchronization with the write data; and

a duty controller configured to:

receive, from the external source, first duty monitoring information which represents a result of monitoring a duty of the write clock, and generate a first duty control signal based on the first duty monitoring information, the first duty control signal being used to adjust the duty cycle of an internal write clock generated from the write clock; and

receive, from the external source, second duty monitoring information which represents a result of monitoring a duty of a read clock generated based on the write clock, and generate a second duty control signal based on the second duty monitoring information, the second duty control signal being used to adjust the duty cycle of the read clock.

12. The memory controller of claim 11 , wherein the first duty control signal includes a duty cycle adjustment weight with which the external source controls an amount of duty adjustment of the internal write clock.

13. The memory controller of claim 11 , wherein the first duty control signal further includes a polarity of the duty cycle adjustment with which the external source decides whether to increase a portion of a logic level high of the internal write clock or to increase a portion of a logic level low of the internal write clock.

14. The memory controller of claim 11 , wherein the memory controller receives the first duty monitoring information from a first mode register set of the external source, and at least one field of the first mode register set indicates whether a logic high portion of the internal write clock is wider than a logic low portion of the internal write clock.

15. The memory controller of claim 11 , wherein the memory controller controls a period of a duty monitoring operation based on the first duty monitoring information.

16. The memory controller of claim 15 , wherein the memory controller increases the period of the duty monitoring operation when the first duty monitoring information indicates that the duty cycle error of the write clock is within a predetermined range.

17. The memory controller of claim 15 , wherein the memory controller temporarily disables the duty monitoring operation when the first duty monitoring information indicates that the duty cycle error of the write clock is within a predetermined range.

18. The memory controller of claim 11 , wherein the memory controller is implemented in a system on chip (SoC).

19. The memory controller of claim 18 , wherein the SoC comprises a plurality of processing units and a volatile memory.

20. The memory controller of claim 19 , wherein the SoC further comprises a non-volatile memory.

Priority Claims (2)
KR 10-2018-0012423 · Jan 31, 2018 · national
KR 10-2018-0062094 · May 30, 2018 · national
Continuity (5)
Continuation 17807163 · Jun 16, 2022
Continuation 17564564 · Dec 29, 2021
Continuation 17148915 · Jan 14, 2021
Continuation 16230185 · Dec 21, 2018
Related Publication 20220383931A1 · Dec 1, 2022
Cited By (1)
US 12,626,749