Method of manufacturing semiconductor device, thermally conductive sheet, and method of manufacturing thermally conductive sheet
A method of manufacturing a semiconductor device includes: adhering together a heat generating body and a heat dissipating body via a thermally conductive sheet by applying a pressure on the heat generating body and the heat dissipating body in a thickness direction of the thermally conductive sheet with the thermally conductive sheet disposed therebetween, the thermally conductive sheet having a compression modulus of 1.40 MPa or less under a compressive stress of 0.10 MPa at 150° C., and a tack strength of 5.0 N·mm or more at 25° C.
1 . A thermally conductive sheet having a compression modulus of from 0.50 to 1.40 MPa, and having a tack strength that is greater than or equal to 5.0 N·mm and less than or equal to 20.0 N·mm at 25° C., wherein the thermally conductive sheet comprises a resin and a thermally conductive filler.
2 . The thermally conductive sheet according to claim 1 , wherein the thermally conductive sheet has a thermal conductivity of 7 W/(mK) or higher, the thermal conductivity being measured using a thermal resistance measured by a steady state method.
3 . A semiconductor device, comprising:
a thermally conductive sheet having a compression modulus of from 0.50 to 1.40 MPa, and having a tack strength that is greater than or equal to 5.0 N·mm and less than or equal to 20.0 N·mm at 25° C., wherein the thermally conductive sheet comprises a resin and a thermally conductive filler,
the thermally conductive sheet adhering together a heat generating body and a heat dissipating body of the semiconductor device, by being disposed between the heat generating body and the heat dissipating body,
wherein the heat generating body is a semiconductor chip and the heat dissipating body is a heat spreader.
4 . The semiconductor device of claim 3 , wherein the heat generating body is a semiconductor package provided with a heat spreader, and the heat dissipating body is a heat sink.
5 . The semiconductor device of claim 3 , wherein the heat generating body is a semiconductor module.