Doped polar layers and semiconductor device incorporating same
The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.
1. A capacitor, comprising:
a doped crystalline polar layer formed between a pair of conductive electrodes,
wherein the doped crystalline polar layer comprises a base dielectric layer comprising a nitride of Al that is doped with a dopant or a nitride of Ga that is doped with the dopant,
wherein a reference crystalline polar layer, comprising the base dielectric layer without the dopant while otherwise being configured to be the same as the doped crystalline polar layer, exhibits a polarization that depends substantially linearly on electric field without exhibiting a hysteresis or remnant polarization, and
wherein the dopant substitutionally replaces Al or Ga of the base dielectric layer and is present at a concentration such that the doped crystalline polar layer exhibits a polarization that depends substantially nonlinearly on the electric field.
2. The capacitor of claim 1 , wherein the doped crystalline polar layer is ferroelectric and exhibits a hysteresis or remnant polarization.
3. The capacitor of claim 1 , wherein the base dielectric layer has a chemical formula represented by Al 1-x R x N, wherein R represents the dopant selected from the group consisting of Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y, and wherein 0<x<1.
4. The capacitor of claim 3 , wherein the base dielectric layer is Al 1-x Sc x N.
5. The capacitor of claim 1 , wherein the base dielectric layer has a chemical formula represented by Ga 1-x R x N, wherein R represents the dopant selected from the group consisting of Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y, and wherein 0<x<1.
6. The capacitor of claim 1 , wherein the base dielectric layer has a chemical formula represented by Al 1-x-y Mg x Nb y N, wherein each of x and y is greater than zero.
7. The capacitor of claim 1 , wherein one or both of the pair of conductive electrodes comprise conductive oxide electrodes.
8. The capacitor of claim 7 , wherein one or both of the conductive oxide electrodes comprise one or more of an iridium (Ir) oxide, a ruthenium (Ru) oxide, a palladium (Pd) oxide, an osmium (Os) oxide, a rhenium (Re) oxide, (La,Sr)CoO 3 , SrRuO 3 , (La,Sr)MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , LaNiO 3 and SrTiO 3 .
9. The capacitor of claim 8 , wherein the one or both of the conductive oxide electrodes comprise (La,Sr)MnO 3 .
10. The capacitor of claim 1 , further comprising a vertical diffusion barrier comprising a refractory metal or an intermetallic compound disposed over one or both of the pair of conductive electrodes.
11. The capacitor of claim 10 , wherein the vertical diffusion barrier comprises one or more of a Ti—Al alloy, a Ni—Al alloy, a Ni—Ti alloy, a Ni—Ga alloy, a Ni—Mn—Ga alloy, a Fe—Ga alloy, a metal boride, a metal carbide, a metal nitride, Ta metal, W metal and Co metal.
12. The capacitor of claim 11 , wherein the vertical diffusion barrier comprises one or more of Ti 3 Al, TiAl, TiAl 3 , Ni 3 Al, NiAl 3 NiAl, Ni 2 MnGa, FeGa and Fe 3 Ga.
13. The capacitor of claim 1 , further comprising a side diffusion barrier comprising a metal oxide disposed at one or more sidewalls of the capacitor and covering at least the doped crystalline polar layer.
14. The capacitor of claim 13 , wherein the side diffusion barrier comprises a metal oxide of Al or Mg.
15. The capacitor of claim 14 , wherein the side diffusion barrier comprises an oxide selected from the group consisting of MgO, TiAlO or LaAlO.
16. A capacitor, comprising:
a doped crystalline polar layer formed between a pair of conductive electrodes,
wherein the doped crystalline polar layer comprises a base dielectric layer having a chemical formula represented by Al 1-x R x N, wherein R represents one or more dopants selected from the group consisting of Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y, and wherein 0<x<1,
wherein a reference crystalline polar layer, comprising the base dielectric layer without the dopant while otherwise being configured to be the same as the doped crystalline polar layer, exhibits a polarization that depends substantially linearly on electric field without a hysteresis or remnant polarization, and
wherein the R substitutionally replaces Al of the base dielectric layer and is present at a concentration such that the doped crystalline polar layer exhibits a polarization that depends substantially nonlinearly on the electric field.
17. The capacitor of claim 16 , wherein the doped crystalline polar layer is ferroelectric and exhibits a hysteresis or remnant polarization.
18. The capacitor of claim 17 , wherein one or both of the pair of conductive electrodes comprise conductive oxide electrodes.
19. The capacitor of claim 18 , wherein one or both of the conductive oxide electrodes comprise one or more of an iridium (Ir) oxide, a ruthenium (Ru) oxide, a palladium (Pd) oxide, an osmium (Os) oxide, a rhenium (Re) oxide, (La,Sr)CoO 3 , SrRuO 3 , (La,Sr)MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , LaNiO 3 and SrTiO 3 .
20. A capacitor, comprising:
a doped crystalline polar layer formed between a pair of conductive electrodes,
wherein the doped crystalline polar layer comprises a base dielectric layer having a chemical formula represented by Ga 1-x R x N, wherein R represents one or more dopants selected from the group consisting of Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn or Y, and wherein 0<x<1,
wherein a reference crystalline polar layer, comprising the base dielectric layer without the dopant while otherwise being configured to be the same as the doped crystalline polar layer, exhibits a polarization that depends substantially linearly on electric field without a hysteresis or remnant polarization, and
wherein the R substitutionally replaces Ga of the base dielectric layer and is present at a concentration such that the doped crystalline polar layer exhibits a polarization that depends substantially nonlinearly on the electric field.
21. The capacitor of claim 20 , wherein the doped crystalline polar layer is ferroelectric and exhibits a hysteresis or remnant polarization.
22. The capacitor of claim 20 , wherein one or both of the pair of conductive electrodes comprise conductive oxide electrodes.
23. The capacitor of claim 22 , wherein one or both of the conductive oxide electrodes comprise one or more of an iridium (Ir) oxide, a ruthenium (Ru) oxide, a palladium (Pd) oxide, an osmium (Os) oxide, a rhenium (Re) oxide, (La,Sr)CoO 3 , SrRuO 3 , (La,Sr)MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , LaNiO 3 and SrTiO 3 .