Half-bridge circuit using flip-chip GaN power devices
GaN-based half bridge power conversion circuits employ control, support and logic functions that are monolithically integrated on the same devices as the power transistors. In some embodiments a low side GaN device communicates through one or more level shift circuits with a high side GaN device. Various embodiments of level shift circuits and their inventive aspects are disclosed.
1. A circuit, comprising:
a low-side circuit disposed on a first monolithic flip-chip semiconductor device, the first flip-chip semiconductor device formed from at least one layer of gallium-nitride disposed on at least one layer of silicon, wherein the low-side circuit comprises:
a low-side switch comprising a low-side switch control gate, a low-side source, and a low-side drain; and
a low-side switch driver, arranged to control a conductivity state of the low-side switch according to a first input signal; and
a high-side circuit disposed on a separate second monolithic flip-chip semiconductor device, the second flip-chip semiconductor device formed from at least one layer of gallium-nitride disposed on at least one layer of silicon, wherein the high-side circuit comprises:
a high-side switch comprising a high-side switch control gate, a high-side source, and a high-side drain; and
a high side switch driver arranged to control a conductivity state of the high-side switch according to a second input signal;
wherein the low-side drain is electrically connected to the high-side source such that the low-side circuit and the high-side circuit form a half-bridge circuit.
2. The circuit of claim 1 wherein the at least one layer of gallium-nitride is a composite stack of III-nitrides.
3. The circuit of claim 1 wherein the at least one layer of gallium-nitride includes a layer of aluminum gallium nitride.
4. The circuit of claim 1 wherein each of the first and the second flip-chip semiconductor devices include flip-chip bumps that are electrical connections.
5. The circuit of claim 1 wherein the first flip-chip semiconductor device and the second flip-chip semiconductor device are disposed on a monolithic semiconductor substrate formed from at least one layer of gallium-nitride disposed on at least one layer of silicon.
6. The circuit of claim 1 wherein the first flip-chip semiconductor device includes at least a portion of a level shifting circuit.
7. The circuit of claim 1 wherein the second flip-chip semiconductor device includes at least a portion of a level shifting circuit.
8. A circuit, comprising:
a low-side circuit disposed on a first monolithic flip-chip semiconductor device, the first flip-chip semiconductor device formed on a substrate including gallium-nitride, wherein the low-side circuit comprises:
a low-side enhancement-mode transistor comprising a low-side control gate, a low-side source, and a low-side drain, the low-side control gate arranged to control a conductivity state of the low-side enhancement-mode transistor according to a first input signal, wherein the first input signal is received from a low-side driver circuit; and
a high-side circuit disposed on a separate second monolithic flip-chip semiconductor device, the second flip-chip semiconductor device formed on a substrate including gallium-nitride, wherein the high-side circuit comprises:
a high-side enhancement-mode transistor comprising a high-side control gate, a high-side source, and a high-side drain, the high-side control gate arranged to control a conductivity state of the high-side enhancement-mode transistor according to a second input signal, wherein the second input signal is received from a high-side driver circuit;
wherein the low-side drain is electrically connected to the high-side source forming a switch-node of a half-bridge circuit.
9. The circuit of claim 8 wherein the gallium-nitride comprises a composite stack of III-nitrides.
10. The circuit of claim 8 wherein the gallium-nitride includes a layer of aluminum gallium nitride.
11. The circuit of claim 8 wherein each of the first and the second flip-chip semiconductor devices include flip-chip bumps that are electrical interconnects.
12. The circuit of claim 8 wherein the first flip-chip semiconductor device and the second flip-chip semiconductor device are disposed on a common gallium-nitride layer that forms a portion of a monolithic semiconductor substrate.
13. The circuit of claim 8 wherein the first flip-chip semiconductor device includes at least a portion of a level shifting circuit.
14. The circuit of claim 8 wherein the low-side driver circuit is disposed on the first flip-chip semiconductor device.
15. The circuit of claim 8 wherein the high-side driver circuit is disposed on the second flip-chip semiconductor device.
16. A circuit, comprising:
a low-side circuit disposed on a first monolithic semiconductor device having a plurality of first flip-chip interconnects, the first semiconductor device formed on a substrate including gallium-nitride and silicon, wherein the low-side circuit comprises:
a low-side transistor comprising a low-side control gate, a low-side source, and a low-side drain, the low-side control gate arranged to control a conductivity state of the low-side transistor according to a first input signal, wherein the first input signal is received from a low-side driver circuit; and
a high-side circuit disposed on a separate second monolithic semiconductor device having a plurality of second flip-chip interconnects, the second semiconductor device formed on a substrate including gallium-nitride and silicon, wherein the high-side circuit comprises:
a high-side transistor comprising a high-side control gate, a high-side source, and a high-side drain, the high-side control gate arranged to control a conductivity state of the high-side transistor according to a second input signal, wherein the second input signal is received from a high-side driver circuit;
wherein the low-side drain is electrically connected to the high-side source forming a half-bridge circuit.
17. The circuit of claim 16 wherein the gallium-nitride comprises a composite stack of III-nitrides.
18. The circuit of claim 16 wherein the first and the second semiconductor devices are disposed on a common gallium-nitride layer that forms a portion of a monolithic semiconductor substrate.
19. The circuit of claim 16 wherein the low-side driver circuit is disposed on the first semiconductor device.
20. The circuit of claim 16 wherein the high-side driver circuit is disposed on the second semiconductor device.