Memory system and operating method of the memory system
A memory system includes a memory device including an interface circuit and a semiconductor memory, and a controller to generate a command for controlling the memory device. The interface circuit receives the command from the controller; determines whether the command is for the semiconductor memory or the interface circuit; and when it is determined that the command is for the interface circuit, performs a blocking operation to block transfer of the command between the interface circuit and the semiconductor memory and performs an internal operation of the interface circuit. The internal operation includes a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.
1. A memory system comprising:
a memory device including a plurality of memory cells; and
an interface circuit configured to receive a command from a controller and perform a blocking operation to block transfer of a signal related to the command between the interface circuit and the memory device,
wherein the command is for increasing accuracy of a duty cycle.
2. The memory system according to claim 1 , wherein the interface circuit and the memory device are included in one memory package.
3. The memory system according to claim 1 , wherein the controller is included in a package which is different from a package in which the interface circuit is included.
4. The memory system according to claim 1 , wherein the interface circuit performs an operation of controlling or rearranging a timing of a control signal including at least one of a data signal, a data strobe signal, a command signal, or an address signal or data exchanged between the controller and the memory device.
5. The memory system according to claim 1 , wherein the interface circuit rearranges a timing of data exchanged between the controller and the memory device to reduce skew of transmitted data.
6. The memory system according to claim 1 , wherein the command includes an address corresponding to the interface circuit when the command is for the interface circuit.
7. The memory system according to claim 1 , wherein the interface circuit is configured to:
perform an internal operation of the interface circuit when the command is for the interface circuit, and
wherein the internal operation includes one of a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.
8. The memory system according to claim 7 , wherein the signal controlling operation includes correcting a duty cycle of a control signal.
9. The memory system according to claim 7 , wherein the training operation includes determining an amount of a mismatch bet teen a timing of an internal clock and a timing of data.
10. The memory system according to claim 8 , wherein the operation of correcting the duty cycle of the control signal includes:
receiving the control signal including a read enable signal or a data strobe signal from the controller; and
delaying a phase of the control signal to generate a delayed control signal for the memory device.
11. The memory system according to claim 7 , wherein the training operation includes a write training operation and a read training operation.
12. The memory system according to claim 7 , wherein the interface circuit controls delay time of an internal clock or a control signal including at least one of a data signal, a data strobe signal, a command signal or an address signal or data transfer between the interface circuit and the controller or the memory device according to the result of the training operation.
13. The memory system according to claim 7 , wherein the interface circuit includes an external input driver, and an internal input and output driver coupled between the interface circuit and the memory device or the controller, and
the on-die termination operation includes controlling the impedance on input lines of the external input driver and the internal input and output driver.
14. The memory system according to claim 7 , wherein the interface circuit includes an external input driver and an internal input and output driver coupled between the interface circuit and the memory device or the controller, and
the driving force control operation includes controlling driving forces of the external input driver and the internal input and output driver.
15. A memory system comprising:
a memory device including a plurality of memory cells; and
an interface circuit configured to receive the command from a controller and perform an internal operation of the interface circuit,
wherein the command is for increasing accuracy of a duty cycle.
16. The memory system according to claim 15 , wherein the interface circuit and the memory device are included in one memory package.
17. The memory system according to claim 15 , wherein the controller is included in a package which is different from a package in which the interface circuit included.
18. The memory system according to claim 15 , wherein the interface circuit performs an operation of controlling or rearranging a timing of a control signal including at least one of a data signal, a data strobe signal, a command signal or an address signal or data exchanged between the controller and the memory device.
19. The memory system according to claim 15 , wherein the interface circuit rearranges a timing of data exchanged between the controller and the memory device to reduce skew of transmitted data.
20. The memory system according to claim 15 , wherein the interface circuit is configured to:
when it is determined that the command is for the interface circuit, perform a blocking operation to block transfer of the command between the interface circuit and the memory device when the command includes an address corresponding to the interface circuit.
21. The memory system according to claim 15 , wherein the internal operation includes one of a signal controlling operation, a training operation, a read operation, an on-die termination operation, a ZQ calibration operation, or a driving force control operation.
22. The memory system according to claim 21 , wherein the training operation includes determining an amount of a mismatch between a timing of an internal clock and a timing of data.
23. The memory system according to claim 21 , wherein the signal controlling operation includes
delaying a phase of a control signal to generate a delayed control signal for the semiconductor memory.
24. The memory system according to claim 21 , wherein the interface circuit controls time of data transfer according to the result of the training operation.
25. The memory system according to claim 21 , wherein the interface circuit includes an external input driver, and an internal input and output driver, and
the on-die termination operation includes controlling the impedance on input lines of the external input driver and the internal input and output driver.
26. The memory system according to claim 21 , wherein the read operation includes:
transmitting a read enable signal, which is received from the controller, to the memory device;
receiving a data strobe signal in response to the read enable signal from the memory device;
reading system data stored therein; and
transmitting, to the controller, the system data in synchronization with the data strobe signal.