IP Library › Granted Patent US 11,730,007
Granted Patent B2
US 11,730,007 · App. 17/829,498 · Granted Aug 15, 2023

Light-emitting element

Inventors: Satoshi Seo (Kanagawa, JP); Hiromi Seo (Kanagawa, JP); Tatsuyoshi Takahashi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/11C09K11/02C09K11/06H10K50/15H10K50/16H10K85/321H10K85/611H10K85/622H10K85/633H10K85/636H10K85/6572H10K85/6576C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1029C09K2211/1044C09K2211/1092H10K85/615H10K85/624H10K85/654H10K2101/10H10K2101/30H10K2101/40
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Quick Facts
Patent No.
US 11,730,007
App. No.
17/829,498
Granted
Aug 15, 2023
Kind
B2
Abstract

To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S 1 level of the fluorescent material, energy at an S 1 level of the thermally activated delayed fluorescent substance can be transferred to the S 1 of the fluorescent material. Alternatively, it is also possible that the S 1 of the thermally activated delayed fluorescent substance is generated from part of the energy of a T 1 level of the thermally activated delayed fluorescent substance, and is transferred to the S 1 of the fluorescent material.

Claims (43)

1. A light-emitting device comprising:

a first compound and a second compound in a light-emitting layer,

wherein in the first compound, a difference between levels of a singlet excited state and a triplet excited state is 0.2 eV or less,

wherein the second compound comprises a fluorescent material,

wherein the first compound exhibits thermally activated delayed fluorescence,

wherein a peak wavelength of an emission spectrum of the first compound is longer than or equal to a peak wavelength of an absorption band on the lowest energy side in an absorption spectrum of the fluorescent material,

wherein an energy is transferred to from a level of the singlet excited state of the first compound to a level of a single exited state of the fluorescent material, and

wherein the fluorescent material emits fluorescence.

2. The light-emitting device according to claim 1 , wherein the first compound is configured to exhibit reverse intersystem crossing.

3. The light-emitting device according to claim 1 , wherein a difference between the peak wavelength of the emission spectrum of the first compound and a peak wavelength of an emission spectrum of the fluorescent material is 30 nm or less.

4. The light-emitting device according to claim 1 , further comprising:

a pair of electrodes; and

an EL layer between the pair of electrodes,

wherein the EL layer comprises the light-emitting layer.

5. A light-emitting device comprising:

a first compound and a second compound in a light-emitting layer,

wherein in the first compound, a difference between levels of a singlet excited state and a triplet excited state is 0.2 eV or less,

wherein the second compound comprises a fluorescent material,

wherein the first compound exhibits thermally activated delayed fluorescence,

wherein an emission spectrum of the first compound overlaps with an absorption band on the lowest energy side in an absorption spectrum of the fluorescent material,

wherein a peak wavelength of the emission spectrum of the first compound is longer than or equal to a peak wavelength of the absorption band on the lowest energy side in the absorption spectrum of the fluorescent material, and

wherein the fluorescent material emits fluorescence.

6. The light-emitting device according to claim 5 , wherein an energy is transferred from the level of the singlet excited state of the first compound to a level of a singlet excited state of the fluorescent material.

7. The light-emitting device according to claim 5 , wherein a difference between the peak wavelength of the emission spectrum of the first compound and a peak wavelength of an emission spectrum of the fluorescent material is 30 nm or less.

8. The light-emitting device according to claim 5 , further comprising:

a pair of electrodes; and

an EL layer between the pair of electrodes,

wherein the EL layer comprises the light-emitting layer.

9. A light-emitting device comprising:

a thermally activated delayed fluorescent substance and a fluorescent material in a light-emitting layer,

wherein the thermally activated delayed fluorescent substance comprises a first organic compound and a second organic compound,

wherein the first organic compound and the second organic compound form an exciplex,

wherein a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of an absorption band on the lowest energy side in an absorption spectrum of the fluorescent material, and

wherein the fluorescent material emits fluorescence.

10. The light-emitting device according to claim 9 , wherein the emission spectrum of the thermally activated delayed fluorescent substance overlaps with the absorption band on the lowest energy side in the absorption spectrum of the fluorescent material.

11. The light-emitting device according to claim 9 , wherein a difference in energy between the peak wavelength of the absorption band on the lowest energy side of the fluorescent material and a peak wavelength of the exciplex is 0.2 eV or less.

12. The light-emitting device according to claim 9 , wherein one of the first organic compound and the second organic compound is a 7c-electron deficient heteroaromatic compound and the other is a π-electron rich heteroaromatic compound or an aromatic amine compound.

13. The light-emitting device according to claim 9 , wherein an energy is transferred from a level of a singlet excited state of the thermally activated delayed fluorescent substance to a level of a singlet excited state of the fluorescent material.

14. The light-emitting device according to claim 9 , wherein a difference between the peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the fluorescent material is 30 nm or less.

15. The light-emitting device according to claim 9 , further comprising:

a pair of electrodes; and

an EL layer between the pair of electrodes,

wherein the EL layer comprises the light-emitting layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 1, 2022
From: SEO, SATOSHI; SEO, HIROMI; TAKAHASHI, TATSUYOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 060066/0625 →
Priority Claims (1)
JP 2012-172830 · Aug 3, 2012 · national
Continuity (7)
Continuation 16944257 · Jul 31, 2020
Continuation 16412529 · May 15, 2019
Continuation 15946094 · Apr 5, 2018
Continuation 15412515 · Jan 23, 2017
Continuation 15051910 · Feb 24, 2016
Continuation 13957612 · Aug 2, 2013
Related Publication 20220293879A1 · Sep 15, 2022
Cited By (1)
US 12,262,574