IP Library › Granted Patent US 12,262,574
Granted Patent B2
US 12,262,574 · App. 18/232,861 · Granted Mar 25, 2025

Light-emitting element

Inventors: Satoshi Seo (Kanagawa, JP); Hiromi Seo (Kanagawa, JP); Tatsuyoshi Takahashi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H10K50/11C09K11/02C09K11/06H10K50/15H10K50/16H10K85/321H10K85/611H10K85/622H10K85/633H10K85/636H10K85/6572H10K85/6576C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1029C09K2211/1044C09K2211/1092H10K85/615H10K85/624H10K85/654H10K2101/10H10K2101/30H10K2101/40
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Quick Facts
Patent No.
US 12,262,574
App. No.
18/232,861
Granted
Mar 25, 2025
Kind
B2
Abstract

To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S 1 level of the fluorescent material, energy at an S 1 level of the thermally activated delayed fluorescent substance can be transferred to the S 1 of the fluorescent material. Alternatively, it is also possible that the S 1 of the thermally activated delayed fluorescent substance is generated from part of the energy of a T 1 level of the thermally activated delayed fluorescent substance, and is transferred to the S 1 of the fluorescent material.

Claims (34)

1. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence, the thermally activated delayed fluorescent substance generating a singlet excited state from a triplet excited state by reverse intersystem crossing,

wherein the thermally activated delayed fluorescent substance comprises a x-electron rich heteroaromatic ring,

wherein a level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence, and

wherein an emission spectrum of the thermally activated delayed fluorescent substance overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the material which emits fluorescence.

2. The light-emitting element according to claim 1 , wherein the T-electron rich heteroaromatic ring is any one of a carbazole skeleton, a thiophene skeleton, and a furan skeleton.

3. The light-emitting element according to claim 1 , wherein a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of the absorption band on the longest wavelength side in the absorption spectrum of the material which emits fluorescence.

4. The light-emitting element according to claim 1 , wherein a difference between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

5. The light-emitting element according to claim 1 , wherein a difference in equivalent energy value between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is smaller than or equal to +0.2 eV.

6. A light-emitting device comprising the light-emitting element according to claim 1 .

7. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence, the thermally activated delayed fluorescent substance generating a singlet excited state from a triplet excited state by reverse intersystem crossing,

wherein the thermally activated delayed fluorescent substance comprises a x-electron deficient heteroaromatic ring,

wherein a level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence, and

wherein an emission spectrum of the thermally activated delayed fluorescent substance overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the material which emits fluorescence.

8. The light-emitting element according to claim 7 , wherein the x-electron deficient heteroaromatic ring is any one of a polyazole skeleton, a diazine skeleton, and a pyridine skeleton.

9. The light-emitting element according to claim 7 , wherein a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of the absorption band on the longest wavelength side in the absorption spectrum of the material which emits fluorescence.

10. The light-emitting element according to claim 7 , wherein a difference between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

11. The light-emitting element according to claim 7 , wherein a difference in equivalent energy value between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is smaller than or equal to +0.2 eV.

12. A light-emitting device comprising the light-emitting element according to claim 7 .

13. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence, the thermally activated delayed fluorescent substance generating a singlet excited state from a triplet excited state by reverse intersystem crossing,

wherein the thermally activated delayed fluorescent substance comprises a x-electron rich heteroaromatic ring and a x-electron deficient heteroaromatic ring,

wherein a level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence, and

wherein an emission spectrum of the thermally activated delayed fluorescent substance overlaps with an absorption band on the longest wavelength side in an absorption spectrum of the material which emits fluorescence.

14. The light-emitting element according to claim 13 , wherein the x-electron rich heteroaromatic ring is any one of a carbazole skeleton, a thiophene skeleton, and a furan skeleton.

15. The light-emitting element according to claim 13 , wherein the x-electron deficient heteroaromatic ring is any one of a polyazole skeleton, a diazine skeleton, and a pyridine skeleton.

16. The light-emitting element according to claim 13 , wherein a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of the absorption band on the longest wavelength side in the absorption spectrum of the material which emits fluorescence.

17. The light-emitting element according to claim 13 , wherein a difference between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

18. The light-emitting element according to claim 13 , wherein a difference in equivalent energy value between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is smaller than or equal to +0.2 eV.

19. A light-emitting device comprising the light-emitting element according to claim 13 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 11, 2023
From: SEO, SATOSHI; SEO, HIROMI; TAKAHASHI, TATSUYOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 064558/0892 →
Priority Claims (1)
JP 2012-172830 · Aug 3, 2012 · national
Continuity (8)
Continuation 17829498 · Jun 1, 2022
Continuation 16944257 · Jul 31, 2020
Continuation 16412529 · May 15, 2019
Continuation 15946094 · Apr 5, 2018
Continuation 15412515 · Jan 23, 2017
Continuation 15051910 · Feb 24, 2016
Continuation 13957612 · Aug 2, 2013
Related Publication 20240049493A1 · Feb 8, 2024
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