IP Library › Granted Patent US 11,355,722
Granted Patent B2
US 11,355,722 · App. 16/944,257 · Granted Jun 7, 2022

Light-emitting element

Inventors: Satoshi Seo (Kanagawa, JP); Hiromi Seo (Kanagawa, JP); Tatsuyoshi Takahashi (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5016C09K11/02C09K11/06H01L51/006H01L51/0051H01L51/0054H01L51/0061H01L51/0072H01L51/0074H01L51/0079H01L51/5004H01L51/5012H01L51/5056H01L51/5072C09K2211/1007C09K2211/1011C09K2211/1014C09K2211/1029C09K2211/1044C09K2211/1092H01L51/0052H01L51/0056H01L51/0067H01L2251/552
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,355,722
App. No.
16/944,257
Granted
Jun 7, 2022
Kind
B2
Abstract

To provide a light-emitting element which uses a fluorescent material as a light-emitting substance and has higher luminous efficiency. To provide a light-emitting element which includes a mixture of a thermally activated delayed fluorescent substance and a fluorescent material. By making the emission spectrum of the thermally activated delayed fluorescent substance overlap with an absorption band on the longest wavelength side in absorption by the fluorescent material in an S 1 level of the fluorescent material, energy at an S 1 level of the thermally activated delayed fluorescent substance can be transferred to the S 1 of the fluorescent material. Alternatively, it is also possible that the S 1 of the thermally activated delayed fluorescent substance is generated from part of the energy of a T 1 level of the thermally activated delayed fluorescent substance, and is transferred to the S 1 of the fluorescent material.

Claims (38)

1. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence, the thermally activated delayed fluorescent substance generating a singlet excited state from a triplet excited state by reverse intersystem crossing,

wherein the thermally activated delayed fluorescent substance comprises a plurality of materials, and

wherein a level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence.

2. The light-emitting element according to claim 1 , wherein a difference in equivalent energy value between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is smaller than or equal to +0.2 eV.

3. The light-emitting element according to claim 1 , wherein a difference in equivalent energy value between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is greater than or equal to −0.2 eV.

4. The light-emitting element according to claim 1 , wherein a difference between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

5. A light-emitting device comprising the light-emitting element according to claim 1 .

6. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence,

wherein an energy difference between a level of a triplet excited state and a level of a singlet excited state is 0.2 eV or less in the thermally activated delayed fluorescent substance,

wherein the thermally activated delayed fluorescent substance comprises a plurality of materials, and

wherein the level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence.

7. The light-emitting element according to claim 6 , wherein a difference in equivalent energy value between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is smaller than or equal to +0.2 eV.

8. The light-emitting element according to claim 6 , wherein a difference in equivalent energy value between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is greater than or equal to −0.2 eV.

9. The light-emitting element according to claim 6 , wherein a difference between a peak wavelength of an emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

10. A light-emitting device comprising the light-emitting element according to claim 6 .

11. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence, the thermally activated delayed fluorescent substance generating a singlet excited state from a triplet excited state by reverse intersystem crossing,

wherein the thermally activated delayed fluorescent substance comprises a plurality of materials,

wherein a level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence, and

wherein an emission spectrum of the thermally activated delayed fluorescent substance overlaps with the longest-wavelength absorption band in an absorption spectrum of the material which emits fluorescence.

12. The light-emitting element according to claim 11 , wherein a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of the longest-wavelength absorption band.

13. The light-emitting element according to claim 11 , wherein a difference between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

14. A light-emitting device comprising the light-emitting element according to claim 11 .

15. A light-emitting element comprising:

a light-emitting layer between a pair of electrodes,

wherein the light-emitting layer comprises a thermally activated delayed fluorescent substance and a material which emits fluorescence,

wherein an energy difference between a level of a triplet excited state and a level of a singlet excited state is 0.2 eV or less in the thermally activated delayed fluorescent substance,

wherein the thermally activated delayed fluorescent substance comprises a plurality of materials,

wherein the level of the singlet excited state generated by the thermally activated delayed fluorescent substance is higher than a level of a singlet excited state of the material which emits fluorescence, and

wherein an emission spectrum of the thermally activated delayed fluorescent substance overlaps with the longest-wavelength absorption band in an absorption spectrum of the material which emits fluorescence.

16. The light-emitting element according to claim 15 , wherein a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance is longer than or equal to a peak wavelength of the longest-wavelength absorption band.

17. The light-emitting element according to claim 15 , wherein a difference between a peak wavelength of the emission spectrum of the thermally activated delayed fluorescent substance and a peak wavelength of an emission spectrum of the material which emits fluorescence is 30 nm or less.

18. A light-emitting device comprising the light-emitting element according to claim 15 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 31, 2020
From: SEO, SATOSHI; SEO, HIROMI; TAKAHASHI, TATSUYOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 053367/0346 →
Priority Claims (1)
JP 2012-172830 · Aug 3, 2012 · national
Continuity (6)
Continuation 16412529 · May 15, 2019
Continuation 15946094 · Apr 5, 2018
Continuation 15412515 · Jan 23, 2017
Continuation 15051910 · Feb 24, 2016
Continuation 13957612 · Aug 2, 2013
Related Publication 20210050545A1 · Feb 18, 2021
Cited By (1)
US 12,262,574