Trench bottom shielding methods and approaches for trenched semiconductor device structures
Semiconductor devices and methods of forming a semiconductor device that includes a polysilicon layer that may improve device reliability and/or a functioning of the device. An example device may include a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type; a plurality of gate trenches in an upper portion of the semiconductor layer structure, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening; and a plurality of polysilicon layers, each polysilicon layer on the second sidewall of a respective gate trench.
1. A device comprising:
a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type;
a plurality of trenches in an upper portion of the wide band-gap semiconductor layer structure, each trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening, and the plurality of trenches comprising source trenches and gate trenches;
a polysilicon layer in a bottom of at least some of the source trenches and in direct contact with the drift region; and
a plurality of gate electrodes, each gate electrode arranged within a respective gate trench.
2. The device of claim 1 , wherein each of the source trenches includes the polysilicon layer.
3. The device of claim 2 , wherein each source trench extends in length in a direction parallel to an upper surface of the wide band-gap semiconductor layer structure, and wherein each polysilicon layer extends the length of the respective source trench.
4. The device of claim 1 , wherein each source trench and each gate trench extends in length in a direction parallel to an upper surface of the wide band-gap semiconductor layer structure.
5. The device of claim 1 , further comprising channel regions on the first sidewall of the gate trenches, wherein the wide band-gap semiconductor layer structure comprises well regions having a second conductivity type that is different from the first conductivity type, and wherein the channel regions are in the well regions.
6. The device of claim 1 , wherein at least one gate trench has an oxide layer therein.
7. The device of claim 1 , wherein the wide band-gap semiconductor layer structure comprises silicon carbide.
8. A device comprising:
a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type;
a plurality of gate trenches in an upper portion of the wide band-gap semiconductor layer structure, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening, each gate trench comprising a plurality of first length portions and a plurality of second length portions alternately arranged in a direction parallel to an upper surface of the wide band-gap semiconductor layer structure; and
a plurality of polysilicon layers, wherein each polysilicon layer is on both the first and second sidewalls of a respective first length portion of the plurality of gate trenches;
wherein the first and second sidewalls of the second length portions of the plurality of gate trenches are free from the polysilicon layers.
9. The device of claim 8 , further comprising an oxide layer within each gate trench.
10. The device of claim 9 , wherein the oxide layer comprises a first cross-section in the first length portions of each gate trench and a second cross-section in the second length portions of each gate trench.
11. The device of claim 8 , further comprising a gate structure within respective gate trenches, wherein the gate structure comprises a gate electrode.
12. The device of claim 11 , wherein the gate electrode comprises a first cross-section in the first length portions of each gate trench, and a second cross-section in the second length portions of each gate trench.
13. The device of claim 8 , wherein the wide band-gap semiconductor layer structure comprises well regions having a second conductivity type that is different from the first conductivity type.
14. The device of claim 8 , further comprising a first source/drain contact on a first major surface of the wide band-gap semiconductor layer structure and a second source/drain contact on a second major surface of the wide band-gap semiconductor layer structure opposite from the first major surface.
15. A device comprising:
a wide band-gap semiconductor layer structure including a drift region that has a first conductivity type, a well region that has a second conductivity type that is different from the first conductivity type, and a source region that has the first conductivity type;
a plurality of gate trenches in an upper portion of the wide band-gap semiconductor layer structure, each gate trench having a bottom surface, a first sidewall, a second sidewall, and an upper opening, and each gate trench exposing side surfaces of the drift region; and
a source contact that is electrically connected to the source region;
a plurality of polysilicon layers, each polysilicon layer on portions of at least one of the first and second sidewalls of a respective gate trench and having an upper surface above the wide band-gap semiconductor layer structure,
wherein the plurality of polysilicon layers are electrically connected to the source contact.
16. The device of claim 15 , wherein each gate trench has first length portions and second length portions, and wherein each polysilicon layer covers an entirety of the second sidewall within a first of the second length portions of the respective gate trench.
17. The device of claim 16 , wherein each polysilicon layer covers an entirety of the first sidewall within the first of the second length portions of the respective gate trench.
18. The device of claim 15 , wherein each polysilicon layer extends longitudinally and covers portions of each of the first and second sidewalls along a length of the respective gate trench.
19. The device of claim 15 , further comprising a gate structure within respective gate trenches, wherein the gate structure comprises a gate electrode.