Seal ring for semiconductor device with gate-all-around transistors
The present disclosure provides a semiconductor structure. The semiconductor structure includes a substrate; and a seal ring region enclosing a circuit region disposed over the substrate. The seal ring region further includes a fin ring protruding from the substrate having a first width; an isolation ring disposed over the substrate and adjacent to the fin ring; a gate ring disposed over the fin ring having a second width, wherein the second width is less than the first width; an epitaxial ring disposed between the fin ring and the isolation ring; and a contact ring lands on the epitaxial ring and the isolation ring. Each of the fin ring, the isolation ring, the epitaxial ring, and the contact ring extends parallel to each other and fully surrounds the circuit region to form a closed loop.
1 . A semiconductor structure, comprising:
a substrate; and
a seal ring region enclosing a circuit region disposed over the substrate, wherein the seal ring region comprises:
a fin ring protruding from the substrate having a first width;
an isolation ring disposed over the substrate and adjacent to the fin ring;
a gate ring disposed over the fin ring having a second width, wherein the second width is less than the first width;
an epitaxial ring disposed between the fin ring and the isolation ring; and
a contact ring lands on the epitaxial ring and the isolation ring, wherein each of the fin ring, the isolation ring, the epitaxial ring, and the contact ring extends parallel to each other and fully surrounds the circuit region to form a closed loop.
2 . The semiconductor structure of claim 1 , wherein the contact ring has a third width, wherein the third width is greater than or equals to the second width, and wherein longitudinal edges of the gate ring and a first longitudinal edge of the contact ring are between longitudinal edges of the fin ring, and wherein a second longitudinal edge of the contact ring is outside the longitudinal edges of the fin ring.
3 . The semiconductor structure of claim 1 , wherein the epitaxial ring has a top surface lower than a top surface of the isolation ring, and wherein the contact ring has a stepped bottom profile contouring a top surface of the epitaxial ring and the top surface of the isolation ring.
4 . The semiconductor structure of claim 1 , wherein the fin ring includes a stack of alternately stacked first semiconductor layers and second semiconductor layers, wherein a portion of the contact ring is vertically aligned with the fin ring along z direction.
5 . The semiconductor structure of claim 4 , wherein the epitaxial ring contacts sidewalls of the first semiconductor layers and the second semiconductor layers.
6 . The semiconductor structure of claim 1 , wherein the contact horizontally spans from the fin ring to the isolation ring.
7 . A semiconductor structure, comprising:
a substrate including a seal ring region enclosing a circuit region, wherein the seal ring region comprises:
a fin ring including a stack of alternating first semiconductor layers and second semiconductor layers over the substrate, wherein the fin ring encloses the circuit region;
a gate ring landing on the fin ring, wherein the gate ring surrounds the circuit region, and wherein longitudinal edges of the gate ring are within longitudinal edges of the fin ring from a top view; and
a contact ring partially landing on the fin ring, wherein the contact ring encloses the circuit region.
8 . The semiconductor structure of claim 7 , further comprising an isolation ring adjacent to the fin ring, wherein the contact ring partially lands on the isolation ring.
9 . The semiconductor structure of claim 7 , further comprising an epitaxial ring disposed on a sidewall of the stack.
10 . The semiconductor structure of claim 9 , wherein the first semiconductor layers are silicon layers and the second semiconductor layers are silicon germanium layers.
11 . The semiconductor structure of claim 10 , wherein the epitaxial ring contacts the silicon layers and the silicon germanium layers.
12 . The semiconductor structure of claim 10 , further comprising an isolation ring disposed over the substrate and adjacent to the fin ring, wherein the contact ring has a stepped bottom profile contouring a top surface of the epitaxial ring and the top surface of the isolation ring.
13 . The semiconductor structure of claim 12 , wherein the epitaxial ring has a top surface lower than a top surface of the isolation ring.
14 . The semiconductor structure of claim 7 , wherein
the fin ring spans a first width between two longitudinal fin edges;
the gate ring spans a second width between two longitudinal gate edges; and
the second width is less than the first width.
15 . The semiconductor structure of claim 14 , wherein the two longitudinal gate edges are disposed between the two longitudinal fin edges.
16 . The semiconductor structure of claim 14 , wherein
the contact ring has a third width, wherein the third width is equals to the second width;
a first longitudinal edge of the contact ring is between the two longitudinal fin edges; and
a second longitudinal edge of the contact ring is outside the two longitudinal fin edges.
17 . The semiconductor structure of claim 1 , wherein the isolation ring includes
a shallow trench isolation (STI) structure of silicon oxide,
a dielectric fin disposed and of a low-k dielectric material over the STI structure; and
a dielectric helmet of a high-k dielectric material over the dielectric fin.
18 . A semiconductor structure, comprising:
a substrate; and
a seal ring region enclosing a circuit region disposed over the substrate, wherein the seal ring region comprises:
a fin ring protruding from the substrate having a first width, wherein the seal ring region includes a stack of alternating first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material, the second semiconductor material being different from the first semiconductor material in composition;
an isolation ring disposed over the substrate and adjacent to the fin ring;
a gate ring disposed over the fin ring having a second width, wherein the second width is less than the first width;
an epitaxial ring disposed between the fin ring and the isolation ring; and
a contact ring lands on the epitaxial ring and the isolation ring, wherein each of the fin ring, the isolation ring, the epitaxial ring, and the contact ring extends parallel to each other and fully surrounds the circuit region to form a closed loop.
19 . The semiconductor structure of claim 18 , wherein the contact ring has a third width, wherein the third width is greater than or equals to the second width, and wherein longitudinal edges of the gate ring and a first longitudinal edge of the contact ring are between longitudinal edges of the fin ring, and wherein a second first longitudinal edge of the contact ring is outside the longitudinal edges of the fin ring.
20 . The semiconductor structure of claim 19 , wherein the epitaxial ring has a top surface lower than a top surface of the isolation ring, and wherein the contact ring has a stepped bottom profile contouring the top surface of the epitaxial ring and the top surface of the isolation ring.