Isolation for multigate devices
An exemplary device includes a stack of channel layers over a substrate extension, a gate, and an insulation layer. The stack of channel layers extends between a first epitaxial source/drain and a second epitaxial source/drain. The gate surrounds each channel layer of the stack of the channel layers. The insulation layer is over the substrate extension, the gate is between a bottommost channel layer of the stack of channel layers and the insulation layer, and the insulation layer is between the gate and the substrate extension. The insulation layer extends between the first epitaxial source/drain and the second epitaxial source/drain, each of which may include an undoped epitaxial layer. A top surface of the undoped epitaxial layer is below a bottom surface of the bottommost channel layer and/or above a top surface of the insulation layer. The insulation layer may wrap the substrate extension and/or have an air gap therein.
1. A semiconductor structure comprising:
a semiconductor mesa;
a semiconductor layer disposed over the semiconductor mesa;
a gate stack that surrounds the semiconductor layer; and
a dielectric layer disposed between the gate stack and the semiconductor mesa, wherein the dielectric layer wraps the semiconductor mesa; and
an epitaxial source/drain structure having a doped portion disposed over an undoped portion, wherein the doped portion is disposed adjacent to the semiconductor layer and the undoped portion is disposed adjacent to the dielectric layer and the semiconductor mesa.
2. The semiconductor structure of claim 1 , wherein the semiconductor layer has a first length along a widthwise direction of the gate stack, the dielectric layer has a second length along the widthwise direction of the gate stack, and the first length is about equal to the second length.
3. The semiconductor structure of claim 1 , wherein a top surface of the undoped portion of the epitaxial source/drain structure is between a top surface of the dielectric layer and a bottom surface of the semiconductor layer.
4. The semiconductor structure of claim 1 , wherein a first thickness of the dielectric layer is greater than a second thickness of the semiconductor layer.
5. The semiconductor structure of claim 1 , wherein:
the dielectric layer has a first dimension along a first direction and a second dimension along a second direction that is different than the first direction;
the semiconductor layer has a third dimension along the first direction and a fourth dimension along the second direction; and
the first dimension is about equal to the third dimension and the second dimension is greater than the fourth dimension.
6. The semiconductor structure of claim 1 , further comprising an isolation feature disposed adjacent to the semiconductor mesa, wherein the dielectric layer is between the isolation feature and the gate stack.
7. The semiconductor structure of claim 6 , wherein a first thickness of the dielectric layer between the gate stack and the semiconductor mesa is less than a second thickness of the dielectric layer between the gate stack and the isolation feature.
8. The semiconductor structure of claim 1 , further comprising an air gap disposed in the dielectric layer.
9. A device comprising:
a first epitaxial source/drain and a second epitaxial source/drain disposed over a substrate, wherein an elevated portion of the substrate is between the first epitaxial source/drain and the second epitaxial source/drain;
an insulation layer disposed over the elevated portion of the substrate and between the first epitaxial source/drain and the second epitaxial source/drain;
a channel layer disposed over the elevated portion of the substrate and between the first epitaxial source/drain and the second epitaxial source/drain;
an isolation feature disposed over the substrate, wherein the elevated portion of the substrate extends through the isolation feature; and
a gate disposed over the elevated portion of the substrate and between the first epitaxial source/drain and the second epitaxial source/drain, wherein:
the gate wraps around the channel layer,
the gate includes a gate dielectric and a gate electrode,
the insulation layer is between a first portion of the gate and the elevated portion of the substrate and between a second portion of the gate and the isolation feature, and
a bottom surface of the second portion of the gate is above a top surface of the elevated portion of the substrate.
10. The device of claim 9 , wherein:
the insulation layer has a first thickness between the first portion of the gate and the elevated portion of the substrate; and
the insulation layer has a second thickness between the second portion of the gate and the isolation feature, wherein the second thickness is different than the first thickness.
11. The device of claim 9 , wherein the first epitaxial source/drain and the second epitaxial source/drain each include an undoped epitaxial layer, wherein a top surface of the undoped epitaxial layer is below a bottom surface of the channel layer.
12. The device of claim 11 , wherein a bottom surface of the undoped epitaxial layer is below a bottom surface of the insulation layer.
13. The device of claim 9 , wherein the insulation layer includes silicon and nitrogen.
14. The device of claim 9 , wherein the channel layer is a first channel layer, the elevated portion of the substrate is a first elevated portion, the gate is a first gate, the insulation layer is a first insulation layer, and the device further comprises:
a second channel layer disposed over a second elevated portion of the substrate and between the first epitaxial source/drain and a third epitaxial source/drain;
a second insulation layer disposed over the second elevated portion of the substrate and between the first epitaxial source/drain and the third epitaxial source/drain; and
a second gate disposed over the second elevated portion of the substrate and between the first epitaxial source/drain and the third epitaxial source/drain, wherein:
the second gate surrounds the second channel layer, and
the second insulation layer is between the second gate and the second elevated portion of the substrate.
15. The device of claim 14 , wherein the first insulation layer and the second insulation layer include a same material.
16. The device of claim 14 , wherein the first insulation layer and the second insulation layer include different materials.
17. A device structure comprising:
a semiconductor mesa;
a first semiconductor layer disposed over the semiconductor mesa;
a gate disposed over the first semiconductor layer; and
an insulation layer disposed between the gate and the semiconductor mesa, wherein:
in a first cross-sectional view, the insulation layer abuts the gate and a top of the semiconductor mesa and a second semiconductor layer abuts sidewalls of the semiconductor mesa, and
in a second cross-sectional view, the insulation layer abuts the gate, the top of the semiconductor mesa, and the sidewalls of the semiconductor mesa.
18. The device structure of claim 17 , further comprising a void within the insulation layer between the gate and the semiconductor mesa.
19. The device structure of claim 18 , wherein the void extends beyond the sidewalls of the semiconductor mesa in the second cross-sectional view and the void does not extend beyond the sidewalls of the semiconductor mesa in the first cross-sectional view.
20. The device structure of claim 17 , wherein, in the first cross-sectional view, a thickness of the second semiconductor layer is greater than a sum of a thickness of the insulation layer and a height of the semiconductor mesa.