Apparatus and methods for manipulating power at an edge ring in plasma process device
The present disclosure relates to apparatus and methods that manipulate the amplitude and phase of the voltage or current of an edge ring. The apparatus includes an electrostatic chuck having a chucking electrode embedded therein for chucking a substrate to the electrostatic chuck. The apparatus further includes a baseplate underneath the substrate to feed power to the substrate. The apparatus further includes an edge ring disposed over the electrostatic chuck. The apparatus further includes an edge ring electrode located underneath the edge ring. The apparatus further includes a circuit including a first variable capacitor coupled to the edge ring electrode.
1. A substrate support, comprising:
a vertical stack comprising:
an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,
a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,
a baseplate underneath the electrostatic chuck to feed power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,
a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;
an edge ring disposed over the electrostatic chuck and circumscribes the substrate;
an edge ring electrode located underneath the edge ring; and
a tuning circuit configured to couple a first pulsed DC power source to the substrate electrode and to the edge ring electrode through transmission lines spaced about the substrate support at evenly spaced intervals, the tuning circuit comprising:
a first circuit coupled to the edge ring electrode through one of the transmission lines, the first circuit comprises:
a first variable capacitor coupled to the edge ring electrode.
2. The substrate support of claim 1 , wherein the:
the first circuit is further coupled to the substrate electrode.
3. The substrate support of claim 2 , wherein the first circuit further includes a second variable capacitor that is coupled to the ground and to a point between the edge ring electrode and the first variable capacitor.
4. The substrate support of claim 2 , the first circuit additionally includes a first fixed capacitor wherein a first range of values of the combination of the first variable capacitor increase/decrease amplitude of voltage at the edge ring.
5. The substrate support of claim 2 , wherein the first variable capacitor and the second variable capacitor are connected in parallel.
6. The substrate support of claim 2 , wherein the circuit is coupled to a second pulsed DC power source.
7. The substrate support of claim 6 , wherein the second pulsed DC power source is connected to the edge ring electrode.
8. A process chamber comprising:
a chamber body;
a lid disposed on the chamber body;
an inductively coupled plasma apparatus positioned above the lid; and
a substrate support positioned within the chamber body, the substrate support comprising:
a vertical stack comprising:
an electrostatic chuck having a substrate electrode embedded therein for chucking a substrate to an upper surface of the electrostatic chuck, wherein the electrostatic chuck includes one or more channels through which a fluid is provided to facilitate temperature control of the substrate support,
a ground plate surrounding an insulating layer, wherein the insulating layer is below the electrostatic chuck,
a baseplate underneath the electrostatic chuck to feed power to the substrate, the baseplate positioned between a lower portion of the ground plate and the electrostatic chuck,
a quartz pipe ring circumscribing the baseplate and the electrostatic chuck;
an edge ring disposed over the electrostatic chuck and circumscribes the substrate;
an edge ring electrode located about a periphery of the baseplate, wherein the edge ring electrode is located underneath the edge ring; and
a tuning circuit configured to couple a first pulsed DC power source to the substrate electrode and to the edge ring electrode through transmission lines spaced about the substrate support at evenly spaced intervals, the tuning circuit comprising:
a first circuit coupled to the edge ring electrode through the collection of transmission lines by attachment to the feed transmission line before it is split,
the first circuit comprises:
a first variable capacitor coupled to the edge ring electrode.
9. The process chamber of claim 8 , further comprising:
a controller configured to adjust the first variable capacitor to manipulate either voltage or current at the edge ring through the edge ring electrode, wherein the first variable capacitor is coupled to one of the first pulsed DC power source.
10. The process chamber of claim 9 , wherein the circuit further includes a second variable capacitor that is coupled to ground and to a point between the edge ring electrode and the first variable capacitor.
11. The substrate support of claim 9 , wherein a first range of values of the combination of the first variable capacitor and the second variable capacitor increase/decrease amplitude of voltage at the edge ring, and wherein a second range of the combination of the first variable capacitor and the second variable capacitor increase/decrease the amplitude of the voltage at the edge ring.
12. The substrate support of claim 9 , wherein the circuit is coupled to a second pulsed DC power source.
13. The process chamber of claim 12 , wherein the second pulsed DC power source is connected to the edge ring through a variable capacitor and an inductor.