Processing chamber with multiple plasma units
Provided is a processing chamber configured to contain a semiconductor substrate in a processing region of the chamber. The processing chamber includes a remote plasma unit and a direct plasma unit, wherein one of the remote plasma unit or the direct plasma unit generates a remote plasma and the other of the remote plasma unit or the direct plasma unit generates a direct plasma. The combination of a remote plasma unit and a direct plasma unit is used to remove, etch, clean, or treat residue on a substrate from previous processing and/or from native oxide formation. The combination of a remote plasma unit and direct plasma unit is used to deposit thin films on a substrate.
1. A processing method comprising: exposing a substrate to a remote plasma that remotely impacts the substrate and exposing the substrate to a direct plasma that directly impacts the substrate in a processing chamber, wherein the direct plasma is generated first between a pedestal electrode and an ion filter and the remote plasma is generated between the ion filter and one or more of an ICP coil and a top electrode after the direct plasma is generated.
2. The processing method of claim 1 , wherein exposing the substrate to the remote plasma and to the direct plasma cleans or treats the substrate.
3. The processing method of claim 1 , further comprising exposing the substrate to at least one precursor to form a film on the substrate.
4. The processing method of claim 1 , wherein the substrate comprises one or more of a trench, a via, or a peak.
5. The processing method of claim 4 , wherein the substrate comprises one or more of a residue or a native oxide thereon.