Plasma processing apparatus and plasma processing method
A plasma processing apparatus disclosed herein includes a substrate support provided in a chamber; a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and a bias power supply configured to supply electric bias energy to an electrode to draw ions into a substrate on the substrate support. The electric bias energy has a cycle having a time length reciprocal to a bias frequency. The radio-frequency power supply is further configured to adjust an output power level of the radio-frequency power in a plurality of phase periods in the cycle such that an evaluation value is less than or equal to a first value, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level to the output power level.
1 . A plasma processing apparatus, comprising:
a chamber;
a substrate support provided in the chamber, the substrate support including an electrode;
a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber; and
a bias power supply configured to supply electric bias energy to the electrode to draw ions into a substrate placed on the substrate support, wherein
the electric bias energy has a cycle having a time length which is a reciprocal of a bias frequency in a range of 50 kHz to 27 MHz,
one or more phase periods in which an evaluation value is larger than a first value in a preceding cycle of the electric bias energy are specified, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level of the reflected waves to an output power level of the radio-frequency power, and
the radio-frequency power supply is further configured to:
reduce an output power level of the radio-frequency power in each of the one or more phase periods in a subsequent cycle of the electric bias energy such that the evaluation value is less than or equal to the first value; and
adjust the output power level of the radio-frequency power in phase periods other than the one or more phase periods in the subsequent cycle such that an average value of the output power level of the radio-frequency power in the subsequent cycle becomes a predetermined value.
2 . The plasma processing apparatus according to claim 1 , wherein the radio-frequency power supply includes:
a signal generator configured to generate a radio-frequency signal; and
an amplifier configured to amplify the radio-frequency signal to generate the radio-frequency power.
3 . The plasma processing apparatus according to claim 2 , wherein the radio-frequency power supply is configured to adjust the output power level of the radio-frequency power by adjusting an amplitude of the radio-frequency signal.
4 . The plasma processing apparatus according to claim 2 , wherein the radio-frequency power supply is configured to adjust the output power level of the radio-frequency power by adjusting an amplification factor of the radio-frequency signal in the amplifier.
5 . The plasma processing apparatus according to claim 1 , wherein the radio-frequency power supply includes:
a signal generator configured to generate a radio-frequency signal;
an attenuator configured to attenuate the radio-frequency signal to generate an attenuated signal; and
an amplifier configured to amplify the attenuated signal to generate the radio-frequency power, and
the radio-frequency power supply is configured to adjust the output power level of the radio-frequency power by adjusting an attenuation factor of the radio-frequency signal in the attenuator.
6 . The plasma processing apparatus according to claim 1 , wherein the radio-frequency power supply is further configured to set a frequency of the radio-frequency power in each phase period of the plurality of phase periods in the cycle to a predetermined frequency so as to suppress the power level of the reflected waves of the radio-frequency power.
7 . A plasma processing method, comprising:
placing a substrate on a substrate support provided in a chamber of a plasma processing apparatus;
supplying radio-frequency power, from a radio-frequency power supply, to generate plasma in the chamber;
supplying electric bias energy, from a bias power supply to an electrode in the substrate support, to draw ions from the plasma into the substrate; and
adjusting an output power level of the radio-frequency power, wherein
the electric bias energy has a cycle having a time length which is a reciprocal of a bias frequency in a range of 50 kHz to 27 MHz,
one or more phase periods in which an evaluation value is larger than a first value in a preceding cycle of the electric bias energy are specified, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level of the reflected waves to an output power level of the radio-frequency power, and
the adjusting the output power level includes:
reducing an output power level of the radio-frequency power in each of the one or more phase periods in a subsequent cycle of the electric bias energy such that the evaluation value is less than or equal to the first value; and
adjusting the output power level of the radio-frequency power in phase periods other than the one or more phase periods in the subsequent cycle such that an average value of the output power level of the radio-frequency power in the subsequent cycle becomes a predetermined value.
8 . The plasma processing method according to claim 7 , further comprising:
setting a frequency of the radio-frequency power in each of the plurality of phase periods in the cycle to a predetermined frequency so as to suppress the power level of the reflected waves of the radio-frequency power.
9 . A plasma processing apparatus, comprising:
a radio-frequency power supply configured to supply radio-frequency power to generate plasma in the chamber;
a bias power supply configured to supply electric bias energy to an electrode, of a substrate support in a chamber, to draw ions into a substrate that is placed on the substrate support, wherein
the electric bias energy has a cycle having a time length which is a reciprocal of a bias frequency in a range of 50 kHz to 27 MHZ,
one or more phase periods in which an evaluation value is larger than a first value in a preceding cycle of the electric bias energy are specified, the evaluation value being a power level of reflected waves of the radio-frequency power or a value of a ratio of the power level of the reflected waves to an output power level of the radio-frequency power, and
the radio-frequency power supply is further configured to;
reduce an output power level of the radio-frequency power in each of the one or more phase periods in a subsequent cycle of the electric bias energy such that the evaluation value is less than or equal to the first value; and
adjust the output power level of the radio-frequency power in phase periods other than the one or more phase periods in the subsequent cycle such that an average value of the output power level of the radio-frequency power in the subsequent cycle becomes a predetermined value.
10 . The plasma processing apparatus according to claim 9 , wherein the radio-frequency power supply is configured to adjust the output power level of the radio-frequency power in phase periods other than the one or more phase periods in each cycle such that an average value of the output power level of the radio-frequency power in each cycle becomes a predetermined value.