INTEGRATED CIRCUIT PACKAGES WITH SILVER AND SILICON NITRIDE MULTI-LAYER
Disclosed herein are silver-coated conductive structures in integrated circuit (IC) package supports, as well as related methods and devices. For example, in some embodiments, an IC package support may include a conductive line, a first material layer on a top surface and on side surfaces of the conductive line, the first material layer including silver, and a second material layer on the first material layer, the second material layer including silicon or aluminum, and one or more of nitrogen and oxygen.
1 . An integrated circuit (IC) package support, comprising:
a conductive line,
a first material layer on a top surface and on side surfaces of the conductive line, the first material layer including silver, and
a second material layer on the first material layer, the second material layer including silicon or aluminum, and one or more of nitrogen and oxygen.
2 . The IC package support of claim 1 , wherein the first material layer has a thickness between 50 nanometers and 450 nanometers.
3 . The IC package support of claim 1 , wherein the second material layer has a thickness between 50 nanometers and 450 nanometers.
4 . The IC package support of claim 1 , wherein the conductive line has a thickness between 10 microns and 20 microns.
5 . The IC package support of claim 1 , wherein the second material layer includes silicon and nitrogen having a ratio of silicon to nitrogen of 3 to 4.
6 . The IC package support of claim 1 , wherein the conductive line is a first conductive line, and the IC package support further includes:
a second conductive line, wherein the first material layer is on a top surface and on side surfaces of the second conductive line and the second material layer is on the first material layer.
7 . The IC package support of claim 6 , wherein the IC package support further includes:
a first layer of dielectric material;
a first conductive plane embedded in the first layer of dielectric material, wherein the first material layer is on a top surface and on side surfaces of the first conductive plane and the second material layer is on the first material layer;
a second layer of dielectric material on the first layer of dielectric material, the first and second conductive lines embedded in the second layer of dielectric material;
a third layer of dielectric material on the second layer of dielectric material; and
a second conductive plane embedded in the third layer of dielectric material, wherein the first material layer is on a top surface and on side surfaces of the second conductive plane and the second material layer is on the first material layer.
8 . The IC package support of claim 7 , wherein the IC package support further includes:
a first conductive pad embedded in the first layer of dielectric material, wherein the first material layer is on a top surface and on side surfaces of the first conductive pad and the second material layer is on the first material layer;
a second conductive pad embedded in the second layer of dielectric material, wherein the first material layer is on a top surface and on side surfaces of the second conductive pad and the second material layer is on the first material layer; and
a conductive via between the first and second conductive pads, wherein the conductive via extends through the first and second material layers on the top surface of the first conductive pad.
9 . The IC package support of claim 1 , wherein the IC package support is a package substrate or an interposer.
10 . An electronic assembly, comprising:
an integrated circuit (IC) package support, including a conductive structure in a layer of dielectric material, the conductive structure having a first material layer on a top surface and on side surfaces of the conductive structure and a second material layer on the first material layer, wherein the first material layer includes silver and the second material layer includes silicon or aluminum, and one or more of nitrogen and oxygen.
11 . The electronic assembly of claim 10 , wherein the first material layer has a thickness between 50 nanometers and 450 nanometers.
12 . The electronic assembly of claim 10 , wherein the second material layer has a thickness between 50 nanometers and 450 nanometers.
13 . The electronic assembly of claim 10 , wherein the conductive structure is a conductive line in a transmission line structure.
14 . The electronic assembly of claim 13 , wherein the transmission line structure further includes a first conductive plane below the conductive line and a second conductive plane above the conductive line.
15 . The electronic assembly of claim 10 , wherein the IC package support further includes conductive contacts and the electronic assembly further includes one or more dies coupled to the conductive contacts.
16 . The electronic assembly of claim 10 , wherein the IC package support is included in an IC package, the electronic assembly further includes a circuit board, and the IC package is coupled to the circuit board.
17 . A method of manufacturing an integrated circuit (IC) package support, comprising:
forming a conductive line;
forming a first layer of material on a top surface and on side surfaces of the conductive line, wherein the first layer of material includes silver;
forming a second layer of material on the first layer of material, wherein the second layer of material includes silicon or aluminum, and one or more of nitrogen and oxygen; and
forming a layer of dielectric material on the second layer of material, wherein the conductive line is embedded in the layer of dielectric material.
18 . The method of claim 17 , wherein the first layer of material has a thickness between 50 nanometers and 450 nanometers.
19 . The method of claim 17 , wherein the second layer of material has a thickness between 50 nanometers and 450 nanometers.
20 . The method of claim 17 , wherein the layer of dielectric material includes an organic, polymer-based film.