Semiconductor device and method of manufacture
View Patent ↗A semiconductor device has a conductive via laterally separated from the semiconductor, an encapsulant between the semiconductor device and the conductive via, and a mark. The mark is formed from characters that are either cross-free characters or else have a overlap count of less than two. In another embodiment the mark is formed using a wobble scan methodology. By forming marks as described, defects from the marking process may be reduced or eliminated.
1. A semiconductor device comprising:
a first semiconductor device separated from a through via by an encapsulant, wherein a protective layer is located over the first semiconductor device and wherein the through via has multiple surfaces planar with the first semiconductor device; and
a circular path traced across the protective layer by a plurality of circular indentations, wherein each of the plurality of circular indentations has a diameter of less than about 100 μm.
2. The semiconductor device of claim 1 , wherein the circular path has a crossing distance of between about 50 μm and about 200 μm.
3. The semiconductor device of claim 2 , wherein the circular path has a crossing distance of between about 50 μm and about 100 μm.
4. The semiconductor device of claim 1 , wherein the circular path has a variable crossing distance.
5. The semiconductor device of claim 1 , wherein the plurality of circular indentations at least partially overlap each other.
6. The semiconductor device of claim 1 , wherein the circular path forms a line, the line having a dot width of between about 80 μm and about 200 μm.
7. The semiconductor device of claim 6 , wherein the line has an overlap count greater than two.
8. A semiconductor device comprising:
a protective layer located over a first semiconductor device, the first semiconductor device being encapsulated by an encapsulant;
through vias extending through the encapsulant, wherein at least one of the through vias has a straight sidewall that extends from a first side of the encapsulant to a second side of the encapsulant opposite the first side; and
a plurality of circular indentations extending into the protective layer and having a diameter of less than about 100 μm, the plurality of circular indentations located along a circular path traced across the protective layer by the plurality of circular indentations.
9. The semiconductor device of claim 8 , wherein the circular path forms a line.
10. The semiconductor device of claim 9 , wherein the circular path has a crossing distance within the line of between about 50 μm and about 200 μm.
11. The semiconductor device of claim 10 , wherein the circular path has a crossing distance within the line of between about 50 μm and about 100 μm.
12. The semiconductor device of claim 9 , wherein the line has a variable crossing distance.
13. The semiconductor device of claim 9 , wherein the line has a dot width of between about 8 μm and about 150 μm.
14. The semiconductor device of claim 8 , wherein the circular indentations have a diameter of between about 20 μm and about 50 μm.
15. A semiconductor device comprising:
an encapsulant encapsulating a first semiconductor die and a through via; and
a protective layer overlying at least the first semiconductor die and the encapsulant, wherein a top surface of the protective layer comprises multiple overlapping indentations, each one of the multiple overlapping indentations being circular in shape and having a diameter of no greater than about 100 μm, the multiple overlapping indentations forming a curved line, the curved line having a dot width that is greater than the diameter.
16. The semiconductor device of claim 15 , further comprising a redistribution layer located across the encapsulant from the protective layer.
17. The semiconductor device of claim 15 , wherein the multiple overlapping indentations wobble through a centerline of a line.
18. The semiconductor device of claim 17 , wherein the line has a dot width between about 80 μm and about 200 μm.
19. The semiconductor device of claim 15 , wherein each of the multiple overlapping indentations has a diameter of between about 20 μm and about 50 μm.
20. The semiconductor device of claim 15 , wherein the through via is recessed within the encapsulant.