Semiconductor device and method of manufacture
Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
1. A semiconductor device comprising:
a plurality of nanostructures surrounded by a gate dielectric, wherein each one of the plurality of nanostructures has a constant thickness; and
an inner spacer extending between adjacent ones of the plurality of nanostructures, the inner spacer having a dished surface, the dished surface having a depth of less than about 4.3 nm.
2. The semiconductor device of claim 1 , wherein the inner spacer comprises SiCN.
3. The semiconductor device of claim 2 , wherein the inner spacer further comprises SiOCN.
4. The semiconductor device of claim 1 , wherein the inner spacer comprises SiCON.
5. The semiconductor device of claim 1 , wherein the inner spacer comprises silicon nitride.
6. The semiconductor device of claim 1 , wherein the inner spacer comprises an oxide rich region and an oxide less region.
7. The semiconductor device of claim 6 , wherein the oxide rich region has an oxygen percentage of between about 10% and about 30%.
8. A semiconductor device comprising:
a first nanostructure over a second nanostructure, the first nanostructure and the second nanostructure surrounded by a gate dielectric, wherein the second nanostructure has a substantially constant thickness; and
an inner spacer located between the first nanostructure and the second nanostructure, the inner spacer having a closed seam.
9. The semiconductor device of claim 8 , wherein the inner spacer has an oxide rich region and an oxide less region.
10. The semiconductor device of claim 9 , wherein the oxide rich region has an oxygen percentage of between about 10% and about 50%.
11. The semiconductor device of claim 10 , wherein the oxide rich region has an oxygen percentage of between about 10% and about 30%.
12. The semiconductor device of claim 11 , wherein the oxide rich region has a nitrogen percentage of between about 5% and about 50%.
13. The semiconductor device of claim 11 , wherein the oxide rich region has a thickness between about 15 {acute over (Å)} and bout 27 {acute over (Å)}.
14. The semiconductor device of claim 11 , wherein the oxide rich region has a carbon concentration of about 4%.
15. A semiconductor device comprising:
a first channel extending from a source to a drain;
a second channel extending from the source to the drain, the second channel being located within a nanostructure, the nanostructure having a constant thickness; and
a spacer in physical contact with both the first channel and the second channel, the spacer having a dished surface, the dished surface having a depth of less than about 4.3 nm.
16. The semiconductor device of claim 15 , wherein the spacer comprises a closed seam.
17. The semiconductor device of claim 15 , wherein the spacer comprises an oxide rich region and an oxide less region.
18. The semiconductor device of claim 17 , wherein the oxide rich region has an oxygen percentage of between about 10% and about 50%.
19. The semiconductor device of claim 18 , wherein the oxide rich region has a nitrogen percentage of between about 23% and about 30%.
20. The semiconductor device of claim 19 , wherein the oxide rich region has a carbon percentage of about 4%.