Methods and apparatus to adhere a dielectric to a nonconductive layer in circuit devices
Methods, apparatus, systems, and articles of manufacture are disclosed that adhere a dielectric to a nonconductive layer in circuit devices. An example apparatus includes an electrically conductive layer, a dielectric layer, and an electrically nonconductive layer separating the dielectric layer from the conductive layer, the nonconductive layer having a first surface facing the conductive layer and a second surface facing the dielectric layer, the first surface having a first roughness, the second surface having a second roughness greater than the first roughness.
1 . An apparatus comprising:
an electrically conductive layer;
a dielectric layer; and
an electrically nonconductive layer separating the dielectric layer from the conductive layer, the nonconductive layer having a first surface facing the conductive layer and a second surface facing the dielectric layer, the first surface having a first roughness, the second surface having a second roughness greater than the first roughness.
2 . The apparatus of claim 1 , wherein the electrically nonconductive layer includes silicon and nitrogen.
3 . The apparatus of claim 1 , wherein the second roughness corresponds to a surface roughness greater than 75 nanometers (nm).
4 . The apparatus of claim 1 , wherein the second surface defines an interface between the nonconductive layer and the dielectric layer such that the nonconductive layer is in contact with the dielectric layer.
5 . The apparatus of claim 4 , further including metal particulates at the interface between the nonconductive layer and the dielectric layer.
6 . The apparatus of claim 5 , wherein ones of the metal particulates have a width in a range from 1 nm to 10 nm.
7 . The apparatus of claim 5 , wherein the second surface of the nonconductive layer includes recesses at least partially surrounding regions of the nonconductive layer in contact with the metal particulates.
8 . The apparatus of claim 5 , wherein the metal particulates include at least one of titanium or magnesium.
9 . The apparatus of claim 1 , further including metal particulates embedded in the nonconductive layer, the second roughness based on ones of the metal particulates protruding beyond the second surface.
10 . The apparatus of claim 9 , wherein ones of the metal particulates are completely encased by the nonconductive layer.
11 . An integrated circuit (IC) package comprising:
a substrate;
a conductive trace extending along a first surface of the substrate;
a dielectric material covering the conductive trace and extending across the first surface of the substrate; and
a nonconductive material between the conductive trace and the dielectric material, the nonconductive material having a second surface facing away from the first surface of the substrate, the second surface of the nonconductive material including protrusions extending from a main body of the nonconductive material, the dielectric material to interface with sidewalls of the protrusions.
12 . The IC package of claim 11 , wherein the nonconductive material further includes a third surface opposite the second surface, the second surface having a surface area greater than the third surface due to the protrusions on the second surface.
13 . The IC package of claim 11 , further including metal bodies at ends of ones of the protrusions.
14 . The IC package of claim 13 , wherein different ones of the metal bodies have different sizes.
15 . The IC package of claim 14 , wherein different ones of the protrusions have different widths corresponding to the different sizes of the different ones of the metal bodies.
16 . The IC package of claim 13 , wherein the metal bodies are at least one of irregularly or randomly distributed across the second surface of the nonconductive material.