High power multilayer module having low inductance and fast switching for paralleling power devices
A power module including at least one substrate, a housing arranged on the at least one power substrate, a first terminal electrically connected to the at least one power substrate, a second terminal including a contact surface, a third terminal electrically connected to the at least one power substrate, a plurality of power devices arranged on and connected to the at least one power substrate, and the third terminal being electrically connected to at least one of the plurality of power devices. The power module further including a base plate and a plurality of pin fins arranged on the base plate and the plurality of pin fins configured to provide direct cooling for the power module.
1. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal;
a third terminal electrically connected to the at least one power substrate; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the power module is structured, arranged, and configured to reduce a height of the power module,
wherein the height of the power module comprises a range of 7 mm to 30 mm.
2. The power module of claim 1 , wherein the height of the power module comprises a range of 9 mm to 11 mm.
3. The power module of claim 1 , wherein the height of the power module comprises a range of 15 mm to 17 mm.
4. The power module of claim 1 , wherein the height of the power module comprises a range of 23 mm to 27 mm.
5. The power module of claim 1 ,
wherein the first terminal comprises a contact surface located above the housing at a first elevation; and
wherein the second terminal comprises a contact surface located above the housing at a second elevation different from the first elevation.
6. The power module of claim 1 , wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).
7. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal;
a third terminal electrically connected to the at least one power substrate; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the power module is structured, arranged, and configured to increase a terminal utilization of the power module;
wherein the terminal utilization comprises a base ratio that comprises a total contact width of the terminals to a width of a power module base; and
wherein the base ratio is in a range of 70% to 95%.
8. The power module of claim 7 , wherein the base ratio is in a range of 70% to 80%.
9. The power module of claim 7 , wherein the base ratio is in a range of 80% to 90%.
10. The power module of claim 7 , wherein the base ratio is in a range of 90% to 95%.
11. The power module of claim 7 , wherein the width of a power module base comprises a width of the at least one power substrate.
12. The power module of claim 7 ,
wherein the first terminal comprises a contact surface located above the housing at a first elevation; and
wherein the second terminal comprises a contact surface located above the housing at a second elevation different from the first elevation.
13. The power module of claim 7 , wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).
14. A power module, comprising:
at least one power substrate;
a housing arranged on the at least one power substrate;
a first terminal electrically connected to the at least one power substrate;
a second terminal;
a third terminal electrically connected to the at least one power substrate; and
a plurality of power devices electrically connected to the at least one power substrate,
wherein the power module is structured, arranged, and configured to increase a terminal area of the power module, and
wherein the terminal area comprises a terminal area ratio that comprises a total contact area to a total power module area and the terminal area ratio has a range of 20% to 35%.
15. The power module of claim 14 , wherein the terminal area ratio has a range of 20% to 25%.
16. The power module of claim 14 , wherein the terminal area ratio has a range of 25% to 30%.
17. The power module of claim 14 , wherein the terminal area ratio has a range of 30% to 35%.
18. The power module of claim 14 ,
wherein the first terminal comprises a contact surface located above the housing at a first elevation; and
wherein the second terminal comprises a contact surface located above the housing at a second elevation different from the first elevation.
19. The power module of claim 14 , wherein a total stray inductance value of a critical power switching loop of the power module comprises a range of 12 (nH) to 2 (nH).