ULTRA-THIN, HYPER-DENSITY SEMICONDUCTOR PACKAGES
Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 μm, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.
1 . A semiconductor package, comprising:
a substrate;
a plurality of metal pillars on a top surface of the substrate;
a semiconductor component laterally adjacent to the plurality of pillars, the semiconductor component having a first surface and a second surface, the second surface opposite the first surface;
a first mold compound encapsulating the plurality of metal pillars and laterally surrounding the semiconductor component, the mold compound having an uppermost surface above the first surface of the semiconductor component, wherein the mold compound is not vertically over the semiconductor component;
a layer comprising electrical connections, the layer coupled to the plurality of metal pillars, the layer above the uppermost surface of the first mold compound;
a first die and a second die coupled to the layer, the first die laterally spaced apart from the second die, the first die vertically over a first one of the plurality of metal pillars at a first side of the semiconductor component, and the second die vertically over a second one of the plurality of metal pillars at a second side of the semiconductor component, the second side opposite the first side; and
a second mold compound laterally surrounding and in contact with the first die and the second die, wherein the second mold compound is on the layer.
2 . The semiconductor package of claim 1 , further comprising an interposer between the layer and the plurality of metal pillars.
3 . The semiconductor package of claim 2 , wherein the interposer is a pitch translation interposer.
4 . The semiconductor package of claim 1 , further comprising a plurality of solder bumps on a bottom surface of the substrate.
5 . The semiconductor package of claim 1 , wherein each metal pillar includes a solder cap that is partially encapsulated by the first mold compound.
6 . The semiconductor package of claim 1 , wherein a z-height of the package is less than or equal to 1 mm.
7 . The semiconductor package of claim 1 , wherein a z-height of the package is approximately 869 μm to 915 μm.
8 . The semiconductor package of claim 1 , wherein the plurality of metal pillars has a pitch that is greater than or equal to 150 μm.
9 . The semiconductor package of claim 1 , wherein a z-height of the substrate is approximately 66 μm.
10 . The semiconductor package of claim 1 , wherein a z-height of the semiconductor component is approximately 125 μm.
11 . A method of fabricating a semiconductor package, the method comprising:
forming a plurality of metal pillars on a top surface of a substrate;
disposing a semiconductor component laterally adjacent to the plurality of pillars, the semiconductor component having a first surface and a second surface, the second surface opposite the first surface;
forming a first mold compound encapsulating the plurality of metal pillars and laterally surrounding the semiconductor component, the mold compound having an uppermost surface above the first surface of the semiconductor component, wherein the mold compound is not vertically over the semiconductor component;
forming a layer comprising electrical connections, the layer coupled to the plurality of metal pillars, the layer above the uppermost surface of the first mold compound;
coupling a first die and a second die to the layer, the first die laterally spaced apart from the second die, the first die vertically over a first one of the plurality of metal pillars at a first side of the semiconductor component, and the second die vertically over a second one of the plurality of metal pillars at a second side of the semiconductor component, the second side opposite the first side; and
forming a second mold compound laterally surrounding and in contact with the first die and the second die, wherein the second mold compound is on the layer.
12 . The method of claim 11 , further comprising disposing an interposer between the layer and the plurality of metal pillars.
13 . The semiconductor package of claim 12 , wherein the interposer is a pitch translation interposer.
14 . The semiconductor package of claim 11 , further comprising forming a plurality of solder bumps on a bottom surface of the substrate.
15 . The semiconductor package of claim 11 , wherein each metal pillar includes a solder cap that is partially encapsulated by the first mold compound.
16 . The semiconductor package of claim 11 , wherein a z-height of the package is less than or equal to 1 mm.
17 . The semiconductor package of claim 11 , wherein a z-height of the package is approximately 869 μm to 915 μm.
18 . The semiconductor package of claim 11 , wherein the plurality of metal pillars has a pitch that is greater than or equal to 150 μm.
19 . The semiconductor package of claim 11 , wherein a z-height of the substrate is approximately 66 μm.
20 . The semiconductor package of claim 11 , wherein a z-height of the semiconductor component is approximately 125 μm.