Solid-state image pickup device and electronic apparatus having a separation wall between the first photodiode and the second photodiode
The present disclosure relates to a solid-state image pickup device and an electronic apparatus that are capable of preventing leakage of charges between adjacent pixels. A plurality of pixels perform photoelectric conversion on light incident from a back surface via different on-chip lenses for each pixel. A pixel separation wall is formed between pixels adjacent to each other, and includes a front-side trench formed from a front surface and a backside trench formed from the back surface. A wiring layer is provided on the front surface. The present disclosure is applicable to, for example, a backside illuminated CMOS image sensor.
1. A light detecting device, comprising a pixel comprising:
a first photodiode and a second photodiode disposed in a semiconductor substrate;
a divided pixel separation wall disposed in the semiconductor substrate and disposed between the first photodiode and the second photodiode; and
an impurity disposed in the semiconductor substrate and disposed between the first photodiode and the second photodiode,
wherein the divided pixel separation wall reaches to each of a first surface and a second surface of the semiconductor substrate, the first surface being opposite to the second surface.
2. The light detecting device according to claim 1 , wherein, in a case where charges stored in one of the first photodiode and the second photodiode overflow, the overflowed charges are configured to leak into the other of the first photodiode and the second photodiode via the impurity.
3. The light detecting device according to claim 1 , wherein, in a first cross-sectional view, the divided pixel separation wall is disposed between the first photodiode and the second photodiode, and, in a second cross-sectional view, the impurity is disposed between the first photodiode and the second photodiode.
4. The light detecting device according to claim 1 , further comprising an on-chip lens, wherein the first photodiode and the second photodiode are configured to receive light through the on-chip lens.
5. The light detecting device according to claim 4 , wherein the first photodiode, the second photodiode, and the on-chip lens are a part of a phase difference detection pixel.
6. The light detecting device according to claim 1 , further comprising a color filter disposed above the semiconductor substrate, wherein the first photodiode and the second photodiode are configured to receive light through the color filter.
7. An electronic apparatus, comprising:
a lens;
a digital signal processing circuitry; and
a light detecting device according to claim 1 .