Memory devices
A memory device includes a first cell array region and a second cell array region separated by a separation region, each including at least one memory block having a plurality of gate electrode layers stacked in a first direction. The gate electrode layers include an upper select electrode layer including a plurality of string select lines, and a first electrode layer including a plurality of first word lines arranged below the string select lines. The first word lines include a first connection line to connect first end portions of the first word lines positioned on the opposite side of the separation region to each other and a plurality of second connection lines to connect some of second end portions of the plurality of first word lines adjacent to the separation region to each other, wherein each of the second connection lines is shorter than the first connection line.
1 . A memory device comprising:
a first cell array region and a second cell array region each comprising at least one memory block comprising a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate; and
a separation region separating the first cell array region and the second cell array region,
wherein, in the at least one memory block, the plurality of gate electrode layers comprises at least one upper select electrode layer comprising a plurality of string select lines extending in a second direction perpendicular to the first direction and spaced apart from each other in a third direction perpendicular to the first direction, and a first electrode layer comprising a plurality of first word lines arranged below the plurality of string select lines,
wherein the plurality of first word lines respectively comprises first end portions opposite the separation region, second end portions opposite the first end portions and adjacent to the separation region,
wherein the first end portions of the plurality of first word lines are electrically connected to each other through a first connection line extending in the third direction,
wherein at least two of the second end portions of the plurality of first word lines are electrically connected to each other through a second connection line extending in the third direction, and
wherein the second connection line is shorter than the first connection line.
2 . The memory device of claim 1 , wherein, in the at least one memory block, the plurality of gate electrode layers further comprises a second electrode layer comprising a plurality of second word lines below the plurality of first word lines, and
wherein the first connection line and the second connection line overlap the second electrode layer in the first direction.
3 . The memory device of claim 2 , wherein the plurality of gate electrode layers further comprises a plurality of third electrode layers stacked in the first direction on the substrate, each of the plurality of third electrode layers comprising a plurality of third word lines below the second electrode layer, and
wherein the first connection line and the second connection line are spaced apart from each other in the second direction.
4 . The memory device of claim 2 , further comprising a plurality of first separation structures extending in the second direction and at least one second separation structure extending in the third direction, wherein at least one of the plurality of first separation structures separates ones of the second end portions of the plurality of first word lines from each other at an end portion of the first electrode layer adjacent to the separation region, and wherein at least one of the first cell array region or the second cell array region is spaced apart from the separation region by the at least one second separation structure, and
wherein each of the plurality of first word lines and the plurality of second word lines is a dummy word line.
5 . The memory device of claim 1 , further comprising a plurality of channel structures extending through the plurality of gate electrode layers in the first direction, wherein the at least one memory block is one of a plurality of memory blocks arranged in the third direction, and wherein the at least one upper select electrode layer is one of a plurality of upper select electrode layers stacked and spaced apart from each other in the first direction, and
wherein, in a plan view, the separation region is between, in the second direction, the second end portions of the plurality of first word lines included in the at least one memory block of the first cell array region and the second end portions of the plurality of first word lines included in the at least one memory block of the second cell array region.
6 . The memory device of claim 1 , wherein the plurality of gate electrode layers further comprises a gate-induced drain leakage (GIDL) electrode layer comprising a plurality of GIDL lines above the plurality of string select lines and on the at least one upper select electrode layer,
wherein first ones of the second end portions of the plurality of first word lines are electrically connected to each other through the second connection line,
wherein second ones of the second end portions of the plurality of first word lines are electrically connected to each other through another second connection line, and
wherein the another second connection line is shorter than the first connection line.
7 . A memory device comprising:
a first cell array region and a second cell array region each comprising at least one memory block comprising a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate; and
a separation region separating the first cell array region and the second cell array region,
wherein, in the at least one memory block, the plurality of gate electrode layers comprises:
at least one upper select electrode layer comprising a plurality of string select lines extending in a second direction perpendicular to the first direction and spaced apart from each other in a third direction perpendicular to the first direction; and
a first electrode layer comprising a plurality of first word lines arranged below the plurality of string select lines, wherein the plurality of first word lines respectively comprises first end portions opposite the separation region, and second end portions opposite the first end portions and adjacent to the separation region,
wherein the first end portions of the plurality of first word lines are electrically connected to each other through a connection line extending in the third direction, and at least one of the second end portions of the plurality of first word lines is electrically connected to one or more of the first end portions through an upper metal line extending in the second direction on an upper portion of the at least one memory block.
8 . The memory device of claim 7 , wherein the second end portions of the plurality of first word lines are spaced apart from each other in the third direction, and
wherein a first one of the plurality of first word lines and a second one of the plurality of first word lines are spaced apart from the upper surface of the substrate by a same distance.
9 . The memory device of claim 7 , wherein, in a plan view, the upper metal line extends in the second direction to cross upper portions of a plurality of bit lines extending in the third direction.
10 . The memory device of claim 7 , wherein the upper metal line comprises a material different from a material of at least one of the plurality of first word lines.
11 . The memory device of claim 7 , wherein:
the plurality of gate electrode layers further comprises a second electrode layer comprising a plurality of second word lines below the first electrode layer, and a plurality of third electrode layers stacked in the first direction on the substrate, each of the plurality of third electrode layers comprising a plurality of third word lines below the second electrode layer,
the first electrode layer, the second electrode layer, and at least two of the plurality of third electrode layers are stacked in a step shape, and
at least one of the first end portions of the plurality of first word lines is included in the step shape.
12 . A memory device comprising:
a first cell array region and a second cell array region each comprising at least one memory block comprising a plurality of gate electrode layers stacked in a first direction perpendicular to an upper surface of a substrate, a plurality of channel structures extending through the plurality of gate electrode layers, and a plurality of first separation structures extending in a second direction perpendicular to the first direction, wherein the at least one memory block is one of a plurality of memory blocks arranged in a third direction perpendicular to the first direction; and
at least one second separation structure extending in the third direction,
wherein, in the at least one memory block, the plurality of gate electrode layers comprises at least one upper select electrode layer comprising a plurality of string select lines extending in the second direction and a first electrode layer comprising a plurality of first word lines below the plurality of string select lines,
wherein the plurality of first word lines respectively comprises first end portions opposite a separation region separating the first cell array region and the second cell array region, and second end portions opposite the first end portions and adjacent to the separation region, and
wherein the first end portions of the plurality of first word lines are electrically connected to each other through a first connection line extending in the third direction.
13 . The memory device of claim 12 , further comprising a plurality of second connection lines extending in the third direction,
wherein first ones of the second end portions of the plurality of first word lines are electrically connected to each other through a first one of the plurality of second connection lines,
wherein second ones of the second end portions of the plurality of first word lines are electrically connected to each other through a second one of the plurality of second connection lines, and
wherein the first one of the plurality of second connection lines and the second one of the plurality of second connection lines are each shorter in the third direction than the first connection line.
14 . The memory device of claim 12 , wherein at least one of the second end portions of the plurality of first word lines adjacent to the at least one second separation structure is electrically connected to at least one of the first end portions of the plurality of first word lines through an upper metal line extending in the second direction.
15 . The memory device of claim 12 , wherein the plurality of gate electrode layers further comprises a plurality of second word lines arranged below the plurality of first word lines, where the plurality of second word lines is a natural number n of second word lines, and a number of each of the plurality of first word lines and the plurality of string select lines is 3n.
16 . The memory device of claim 12 , wherein:
the plurality of first separation structures comprises a plurality of word line separation structures and a plurality of select line separation structures,
the plurality of word line separation structures and the at least one second separation structure extend in the first direction to extend through the plurality of gate electrode layers,
the plurality of select line separation structures extend into the first electrode layer and are spaced apart from the upper surface of the substrate in the first direction, and
the plurality of select line separation structures and at least one of the plurality of word line separation structures separate ones of the second end portions of the plurality of first word lines from each other at an end portion of the first electrode layer adjacent to the separation region.
17 . The memory device of claim 16 , wherein one of the plurality of word line separation structures and two of the plurality of select line separation structures alternate with each other in the third direction, and three or more of the plurality of channel structures are between two adjacent word line separation structures among the plurality of word line separation structures.
18 . The memory device of claim 12 , wherein the at least one second separation structure is a single second separation structure, and wherein the first electrode layer comprises an uppermost layer in the separation region among the plurality of gate electrode layers in the separation region.
19 . The memory device of claim 12 , further comprising:
a cell contact region on a side surface of each of the first cell array region and the second cell array region in the second direction,
wherein a pass transistor configured to apply an operating voltage to each of the plurality of memory blocks is below the plurality of gate electrode layers extending to the cell contact region.
20 . The memory device of claim 12 , wherein, in the separation region, a pass transistor configured to apply an operating voltage to each of the plurality of memory blocks is below the plurality of gate electrode layers, and
wherein the second end portions of the plurality of first word lines are adjacent to the at least one second separation structure.