Acoustic wave device, and ladder filter including the same
An acoustic wave device includes a substrate including a piezoelectric layer, first and second resonators on the substrate, and a shared reflector. The second resonator is located on the substrate adjacent to the first resonator and has different frequency characteristics than the first resonator. The shared reflector is located on the substrate between the first resonator and the second resonator and is a reflector for both the first resonator and the second resonator. The first resonator includes a first interdigital transducer electrode with electrode fingers positioned with a first pitch. The second resonator includes a second interdigital transducer electrode with electrode fingers positioned with a second pitch. A lower limit frequency of a stop band of the shared reflector is between a lower limit frequency of a stop band of the first resonator and a lower limit frequency of a stop band of the second resonator. An upper limit frequency of the stop band of the shared reflector is between an upper limit frequency of the stop band of the first resonator and an upper limit frequency of the stop band of the second resonator.
1. An acoustic wave device comprising:
a substrate including a piezoelectric layer;
a first resonator on the substrate;
a second resonator on the substrate adjacent to the first resonator and having different frequency characteristics than the first resonator; and
a shared reflector on the substrate between the first resonator and the second resonator and defining a reflector for both the first resonator and the second resonator; wherein
the first resonator includes a first interdigital transducer electrode including electrode fingers positioned with a first pitch;
the second resonator includes a second interdigital transducer electrode including electrode fingers positioned with a second pitch;
a lower limit frequency of a stop band of the shared reflector is equal to both a lower limit frequency of a stop band of the first resonator and a lower limit frequency of a stop band of the second resonator, or between the lower limit frequency of the stop band of the first resonator and the lower limit frequency of the stop band of the second resonator; and
an upper limit frequency of the stop band of the shared reflector is equal to both an upper limit frequency of the stop band of the first resonator and an upper limit frequency of the stop band of the second resonator, or between the upper limit frequency of the stop band of the first resonator and the upper limit frequency of the stop band of the second resonator.
2. The acoustic wave device according to claim 1 , wherein the second pitch is narrower than the first pitch; and
the shared reflector includes electrode fingers;
at least some of the electrode fingers of the shared reflector are positioned with a pitch between the first pitch and the second pitch.
3. The acoustic wave device according to claim 2 , wherein the pitch of the electrode fingers of the shared reflector narrows gradually from the first resonator toward the second resonator.
4. The acoustic wave device according to claim 2 , wherein the pitch of the electrode fingers of the shared reflector narrows in a stepwise manner from the first resonator toward the second resonator.
5. The acoustic wave device according to claim 1 , wherein a duty of the electrode fingers in the first resonator is a first duty, and a duty of the electrode fingers in the second resonator is a second duty greater than the first duty;
the shared reflector includes electrode fingers; and
at least a portion of the electrode fingers of the shared reflector are positioned with a duty between the first duty and the second duty.
6. The acoustic wave device according to claim 5 , wherein the duty of the electrode fingers of the shared reflector increases gradually from the first resonator toward the second resonator.
7. The acoustic wave device according to claim 5 , wherein the duty of the electrode fingers of the shared reflector increases in a stepwise manner from the first resonator toward the second resonator.
8. The acoustic wave device according to claim 1 , wherein
a thickness of the electrode fingers of the first resonator is thinner than a thickness of the electrode fingers of the second resonator; and
a thickness of at least a portion of electrode fingers of the shared reflector is thicker than the thickness of the electrode fingers of the first resonator and thinner than the thickness of the electrode fingers of the second resonator.
9. The acoustic wave device according to claim 1 , further comprising:
a dielectric layer on the first resonator, the second resonator, and the shared reflector; wherein
a thickness of the dielectric layer in a region of the first resonator is thicker than a thickness of the dielectric layer in a region of the second resonator; and
at least a portion of the dielectric layer in a region of the shared reflector is thinner than the thickness of the dielectric layer in the region of the first resonator and thicker than the thickness of the dielectric layer in the region of the second resonator.
10. The acoustic wave device according to claim 1 , wherein
each of the first resonator and the second resonator includes:
a first reflector between the shared reflector and the interdigital transducer electrode included in the first and second resonators; and
a second reflector at an end portion across the interdigital transducer electrode from the first reflector;
electrode fingers of the first reflector of the first resonator are positioned with the first pitch; and
electrode fingers of the first reflector of the second resonator are positioned with the second pitch.
11. The acoustic wave device according to claim 10 , wherein a sum of a number of the electrode fingers of the first reflector and a number of electrode fingers of the shared reflector is the same as a number of electrode fingers of the second reflector.
12. The acoustic wave device according to claim 1 , wherein a length of electrode fingers of the shared reflector is greater than or equal to an overlap width of the electrode fingers in the interdigital transducer electrode of each of the first and second resonators.
13. The acoustic wave device according to claim 1 , wherein a first imaginary line that passes through a center of an overlap width of the first interdigital transducer electrode and that is orthogonal to the electrode fingers of the first interdigital transducer electrode does not overlap a second imaginary line that passes through a center of an overlap width of the second interdigital transducer electrode and that is orthogonal to the electrode fingers of the second interdigital transducer electrode.
14. The acoustic wave device according to claim 10 , wherein
each of the first and second interdigital transducer electrodes, the shared reflector, the first and second reflector of the first resonator, and the first and second reflectors of the second resonator includes a busbar to which corresponding electrode fingers are connected; and
in each of the first and second interdigital transducer electrodes, the shared reflector, the first and second reflector of the first resonator, and the first and second reflectors of the second resonator, an angle between each of the corresponding electrode fingers and the busbar is larger than 0° and smaller than 90°.
15. The acoustic wave device according to claim 1 , wherein the substrate further includes a reflection layer on which the piezoelectric layer is provided.
16. A ladder filter comprising:
the acoustic wave device according to claim 1 ;
a plurality of series arm resonators including the first resonator; and
a plurality of parallel arm resonators including the second resonator; wherein
the plurality of series arm resonators further includes a third resonator narrower in a pitch of electrode fingers than the first resonator.
17. A ladder filter comprising:
the acoustic wave device according to claim 1 ;
a plurality of series arm resonators including the first resonator; and
a plurality of parallel arm resonators including the second resonator, wherein
the plurality of parallel arm resonators further includes a fourth resonator wider in a pitch of electrode fingers than the second resonator.
18. An acoustic wave device comprising:
a substrate including a piezoelectric layer;
a first resonator on the substrate;
a second resonator on the substrate adjacent to the first resonator and having frequency characteristics different from frequency characteristics of the first resonator; and
a shared reflector on the substrate between the first resonator and the second resonator and defining a reflector for both the first resonator and the second resonator; wherein
the first resonator includes a first interdigital transducer electrode including electrode fingers positioned with a first pitch;
the second resonator includes a second interdigital transducer electrode including electrode fingers positioned with a second pitch; and
where values obtained by multiplying a pitch of electrode fingers, a duty of the electrode fingers, and a thickness of the electrode fingers for the shared reflector, the first resonator, and the second resonator are respectively a first value, a second value, and a third value, the first value is the same as both the second value and the third value or between the second value and the third value.
19. The acoustic wave device according to claim 18 , further comprising:
a dielectric layer covering the first resonator, the second resonator, and the shared reflector; wherein
the dielectric layer is made of a material having a bulk wave acoustic velocity lower than an acoustic velocity of a resonant frequency of each of the first resonator and the second resonator; and
where values obtained by multiplying the pitch of the electrode fingers, the duty of the electrode fingers, the thickness of the electrode fingers, and a thickness of the dielectric layer for the shared reflector, the first resonator, and the second resonator are respectively a fourth value, a fifth value, and a sixth value, the fourth value is the same as both the fifth value and the sixth value or between the fifth value and the sixth value.
20. The acoustic wave device according to claim 18 , further comprising:
a dielectric layer covering the first resonator, the second resonator, and the shared reflector; wherein
the dielectric layer is made of a material having a bulk wave acoustic velocity higher than an acoustic velocity of a resonant frequency of each of the first resonator and the second resonator; and
where values obtained by multiplying the pitch of the electrode fingers, the duty of the electrode fingers, the thickness of the electrode fingers, and an inverse number of a thickness of the dielectric layer for the shared reflector, the first resonator, and the second resonator are respectively a seventh value, an eighth value, and a ninth value, the seventh value is the same as both the eighth value and the ninth value or between the eighth value and the ninth value.