Acoustic wave device
An acoustic wave device includes a support substrate, a piezoelectric layer, and an IDT electrode. The piezoelectric layer is over the support substrate. The IDT electrode is on the piezoelectric layer, and includes a plurality of electrode fingers. An intersecting width of the plurality of electrode fingers is equal to or smaller than about 5λ.
1. An acoustic wave device comprising:
a support substrate;
a piezoelectric layer over the support substrate in a thickness direction of the support substrate; and
an IDT electrode on the piezoelectric layer, the IDT electrode including a plurality of electrode fingers; wherein
an intersecting width of the plurality of electrode fingers is equal to or smaller than about 5λ.
2. The acoustic wave device according to claim 1 , wherein the intersecting width of the plurality of electrode fingers is equal to or smaller than about 2λ.
3. The acoustic wave device according to claim 1 , further comprising:
a low acoustic velocity film in which an acoustic velocity of a bulk wave propagating through the low acoustic velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer; wherein
the low acoustic velocity film is between the support substrate and the piezoelectric layer in the thickness direction of the support substrate.
4. The acoustic wave device according to claim 3 , further comprising:
a high acoustic velocity film in which an acoustic velocity of a bulk wave propagating through the high acoustic velocity film is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer; wherein
the high acoustic velocity film is between the support substrate and the low acoustic velocity film in the thickness direction of the support substrate.
5. The acoustic wave device according to claim 3 , wherein the support substrate is a high acoustic velocity support substrate in which an acoustic velocity of a bulk wave propagating through the high acoustic velocity support substrate is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
6. The acoustic wave device according to claim 1 , wherein the piezoelectric layer is made of lithium tantalate.
7. The acoustic wave device according to claim 2 , further comprising:
a low acoustic velocity film in which an acoustic velocity of a bulk wave propagating through the low acoustic velocity film is lower than an acoustic velocity of a bulk wave propagating through the piezoelectric layer; wherein
the low acoustic velocity film is between the support substrate and the piezoelectric layer in the thickness direction of the support substrate.
8. The acoustic wave device according to claim 7 , further comprising:
a high acoustic velocity film in which an acoustic velocity of a bulk wave propagating through the high acoustic velocity film is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer; wherein
the high acoustic velocity film is between the support substrate and the low acoustic velocity film in the thickness direction of the support substrate.
9. The acoustic wave device according to claim 7 , wherein the support substrate is a high acoustic velocity support substrate in which an acoustic velocity of a bulk wave propagating through the high acoustic velocity support substrate is higher than an acoustic velocity of an acoustic wave propagating through the piezoelectric layer.
10. The acoustic wave device according to claim 2 , wherein the piezoelectric layer is made of lithium tantalate.
11. The acoustic wave device according to claim 3 , wherein the piezoelectric layer is made of lithium tantalate.
12. The acoustic wave device according to claim 4 , wherein the piezoelectric layer is made of lithium tantalate.
13. The acoustic wave device according to claim 5 , wherein the piezoelectric layer is made of lithium tantalate.
14. The acoustic wave device according to claim 7 , wherein the piezoelectric layer is made of lithium tantalate.
15. The acoustic wave device according to claim 8 , wherein the piezoelectric layer is made of lithium tantalate.
16. The acoustic wave device according to claim 9 , wherein the piezoelectric layer is made of lithium tantalate.