Methods and apparatus for processing a substrate
Methods and apparatus for processing a substrate is provided herein. For example, the method comprises prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate, in a process chamber processing the substrate in a presence of an electric field, subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate, and determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement.
1 . A method for processing a substrate, comprising:
prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate;
in a process chamber processing the substrate in a presence of an electric field;
subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate; and
determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement;
wherein obtaining the first measurement and the second measurement is performed using a laser displacement sensor comprising an emitter and a detector, and
wherein the laser displacement sensor is disposed adjacent to a slit valve position on the process chamber.
2 . The method of claim 1 , wherein the first measurement and the second measurement are based on a position of the emitter and a position of the detector relative to the substrate and a location of a reflected beam spot detected by the detector.
3 . The method of claim 1 , further comprising obtaining a temperature measurement at the first point or a second point, different from the first point, wherein determining whether substrate warpage occurred is further based upon analysis of the temperature measurement.
4 . The method of claim 1 , further comprising triggering a fault indication when substrate warpage is determined.
5 . The method of claim 1 , wherein the substrate is made from at least one of aluminum, copper, or tantalum.
6 . A non-transitory computer readable storage medium having instructions stored thereon that when executed by a processor perform a method for processing a substrate, comprising:
prior to processing a substrate, obtaining a first measurement at a first point along a surface of the substrate;
in a process chamber processing the substrate in a presence of an electric field;
subsequent to processing the substrate, obtaining a second measurement at the first point along the surface of the substrate; and
determining whether substrate warpage occurred based upon analysis of the first measurement and the second measurement;
wherein obtaining the first measurement and the second measurement is performed using a laser displacement sensor comprising an emitter and a detector, and
wherein the laser displacement sensor is disposed adjacent to a slit valve position on the process chamber.
7 . The non-transitory computer readable storage medium of claim 6 , wherein the first measurement and the second measurement are based on a position of the emitter and a position of the detector relative to the substrate and a location of a reflected beam spot detected by the detector.
8 . The non-transitory computer readable storage medium of claim 6 , further comprising obtaining a temperature measurement at the first point or a second point, different from the first point, wherein determining whether substrate warpage occurred is further based upon analysis of the temperature measurement.
9 . The non-transitory computer readable storage medium of claim 6 , further comprising triggering a fault indication when substrate warpage is determined.
10 . The non-transitory computer readable storage medium of claim 6 , wherein the substrate is made from at least one of aluminum, copper, or tantalum.
11 . An apparatus for processing a substrate, comprising:
a process chamber configured to process a substrate;
an apparatus configured to obtain measurements along a surface of the substrate; and
a controller configured to:
prior to processing the substrate, obtain a first measurement at a first point along the surface of the substrate;
in the process chamber processing the substrate in a presence of an electric field;
subsequent to processing the substrate, obtain a second measurement at the first point along the surface of the substrate; and
determine whether substrate warpage occurred based upon analysis of the first measurement and the second measurement;
wherein the apparatus for obtaining measurements along the surface of the substrate is a laser displacement sensor comprising an emitter and a detector, and
wherein the laser displacement sensor is disposed adjacent to a slit valve position on the process chamber.
12 . The apparatus of claim 11 , wherein the first measurement and the second measurement are based on a position of the emitter and a position of the detector relative to the substrate and a location of a reflected beam spot detected by the detector.
13 . The apparatus of claim 11 , further comprising a temperature measurement apparatus that is configured to obtain a temperature measurement at the first point or a second point, different from the first point, wherein the controller is further configured to determine whether substrate warpage occurred based on the temperature measurement.
14 . The apparatus of claim 11 , wherein the controller is further configured to trigger a fault indication when substrate warpage is detected.